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Results: 1-17 |
Results: 17
BEHAVIOR OF EPITAXIAL GAAS-LAYERS AS ALPHA-PARTICLE DETECTORS
Authors: BOTNARYUK VM ZHILYAEV YV IVANOV AM STROKAN NB FEDOROV LM
Citation: Vm. Botnaryuk et al., BEHAVIOR OF EPITAXIAL GAAS-LAYERS AS ALPHA-PARTICLE DETECTORS, Technical physics letters, 24(4), 1998, pp. 250-253
ON THE GENERATION OF RADIATION DEFECTS BY ACCELERATED IONS IN SILICON
Authors: IVANOV AM STROKAN NB
Citation: Am. Ivanov et Nb. Strokan, ON THE GENERATION OF RADIATION DEFECTS BY ACCELERATED IONS IN SILICON, Technical physics letters, 24(10), 1998, pp. 793-796
PROPERTIES OF P(-N STRUCTURES WITH A BURIED LAYER OF RADIATION-INDUCED DEFECTS())
Authors: IVANOV AM STROKAN NB SHUMAN VB
Citation: Am. Ivanov et al., PROPERTIES OF P(-N STRUCTURES WITH A BURIED LAYER OF RADIATION-INDUCED DEFECTS()), Semiconductors, 32(3), 1998, pp. 325-331
CARRIER TRANSPORT IN A DIODE BASE WITH LOCALLY NONUNIFORM RECOMBINATION PROPERTIES
Authors: IVANOV AM STROKAN NB SHUMAN VB
Citation: Am. Ivanov et al., CARRIER TRANSPORT IN A DIODE BASE WITH LOCALLY NONUNIFORM RECOMBINATION PROPERTIES, Technical physics letters, 23(5), 1997, pp. 369-372
FORMATION OF CARRIER GENERATION CENTERS IN PURE SI UPON INTERACTION WITH FAST IONS
Authors: IVANOV AM STROKAN NB
Citation: Am. Ivanov et Nb. Strokan, FORMATION OF CARRIER GENERATION CENTERS IN PURE SI UPON INTERACTION WITH FAST IONS, Semiconductors, 31(6), 1997, pp. 575-579
FORMATION OF RADIATION DEFECTS IN HIGH-RESISTIVITY SILICON AS A RESULT OF CYCLIC IRRADIATION AND ANNEALING
Authors: VERBITSKAYA EM EREMIN VK IVANOV AM LI Z SCHMIDT B
Citation: Em. Verbitskaya et al., FORMATION OF RADIATION DEFECTS IN HIGH-RESISTIVITY SILICON AS A RESULT OF CYCLIC IRRADIATION AND ANNEALING, Semiconductors, 31(2), 1997, pp. 189-193
ROLE OF THE NATURE AND OXIDATION-STATE OF METAL IN A METAL-CONTAININGREAGENT IN ITS TRIBOCHEMICAL REACTION WITH CARBOXYLIC-ACIDS IN ORGANIC MEDIA
Authors: IVANOV AM ELKOVA NN LUCHKINA LV ABOLMASOVA NN
Citation: Am. Ivanov et al., ROLE OF THE NATURE AND OXIDATION-STATE OF METAL IN A METAL-CONTAININGREAGENT IN ITS TRIBOCHEMICAL REACTION WITH CARBOXYLIC-ACIDS IN ORGANIC MEDIA, Russian journal of applied chemistry, 69(9), 1996, pp. 1354-1356
EFFECT OF ALPHA-RADIATION ON THE PHOTOLUMINESCENCE OF POROUS SILICON
Authors: LEBEDEV AA IVANOV AM REMENYUK AD RUD YV
Citation: Aa. Lebedev et al., EFFECT OF ALPHA-RADIATION ON THE PHOTOLUMINESCENCE OF POROUS SILICON, Semiconductors, 30(1), 1996, pp. 107-108
9 SPIRITS - A HIERARCHY OF SPIRITUAL VALUES OF THE UPPER KOLYMA-YUKAGIR
Authors: IVANOV AM
Citation: Am. Ivanov, 9 SPIRITS - A HIERARCHY OF SPIRITUAL VALUES OF THE UPPER KOLYMA-YUKAGIR, Anthropology & archeology of Eurasia, 35(2), 1996, pp. 18-32
STRUCTURE AND PROPERTIES OF CAST-IRON PREFORMS OF PISTON RINGS
Authors: IVANOV AM TSAPLINA NB KABLOV VG
Citation: Am. Ivanov et al., STRUCTURE AND PROPERTIES OF CAST-IRON PREFORMS OF PISTON RINGS, Metal science and heat treatment, 38(9-10), 1996, pp. 437-439
FORMATION OF STRUCTURAL DEFECTS AS FAST IONS ARE STOPPED IN SILICON
Authors: IVANOV AM ILYASHENKO IN STROKAN NB SCHMIDT B
Citation: Am. Ivanov et al., FORMATION OF STRUCTURAL DEFECTS AS FAST IONS ARE STOPPED IN SILICON, Semiconductors, 29(3), 1995, pp. 281-285
APPLICATION OF HOLOGRAPHIC-INTERFEROMETRY IN EXPERIMENTAL MECHANICS
Authors: IVANOV AM
Citation: Am. Ivanov, APPLICATION OF HOLOGRAPHIC-INTERFEROMETRY IN EXPERIMENTAL MECHANICS, Industrial laboratory, 61(7), 1995, pp. 423-424
GASTROINTESTINAL LEIOMYOMAS
Authors: IVANOV AM
Citation: Am. Ivanov, GASTROINTESTINAL LEIOMYOMAS, Kliniceskaa medicina, 72(6), 1994, pp. 54-55
EFFECT OF DEUTERON IRRADIATION ON RADIATION DETECTORS MADE OF HIGH-RESISTIVITY SILICON
Authors: VERBITSKAYA EM EREMIN VE IVANOV AM STROKAN NB
Citation: Em. Verbitskaya et al., EFFECT OF DEUTERON IRRADIATION ON RADIATION DETECTORS MADE OF HIGH-RESISTIVITY SILICON, Semiconductors, 27(7), 1993, pp. 612-616
CHARACTERISTIC FEATURES OF THE GENERATION CURRENT IN ALPHA-IRRADIATEDP-N JUNCTIONS MADE FROM HIGH-RESISTIVITY SILICON()
Authors: VERBITSKAYA EM EREMIN VK IVANOV AM STROKAN NB
Citation: Em. Verbitskaya et al., CHARACTERISTIC FEATURES OF THE GENERATION CURRENT IN ALPHA-IRRADIATEDP-N JUNCTIONS MADE FROM HIGH-RESISTIVITY SILICON(), Semiconductors, 27(2), 1993, pp. 115-119
RADIATION DEFECTS IN SILICON IRRADIATED WITH ALPHA-PARTICLES AT LOW-TEMPERATURES
Authors: BERMAN LS IVANOV AM PAVLOVA ML REMENYUK AD STROKAN NB
Citation: Ls. Berman et al., RADIATION DEFECTS IN SILICON IRRADIATED WITH ALPHA-PARTICLES AT LOW-TEMPERATURES, Semiconductors, 27(11-12), 1993, pp. 987-990
ROLE OF OXYGEN IN INSTABILITY OF CARBON-RELATED RADIATION DEFECTS IN SILICON
Authors: VERBITSKAYA EM EREMIN VK IVANOV AM STROKAN NB LI Z SCHMIDT B
Citation: Em. Verbitskaya et al., ROLE OF OXYGEN IN INSTABILITY OF CARBON-RELATED RADIATION DEFECTS IN SILICON, Semiconductors, 27(11-12), 1993, pp. 1136-1140
Risultati: 1-17 |