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Results: 1-9 |
Results: 9
Investigation of deep submicron single and double gate SOI MOSFETs in accumulation mode for enhanced performance
Authors: Rauly, E Iniguez, B Flandre, D
Citation: E. Rauly et al., Investigation of deep submicron single and double gate SOI MOSFETs in accumulation mode for enhanced performance, EL SOLID ST, 4(3), 2001, pp. G28-G30
Fully depleted SOICMOS technology for heterogeneous micropower, high-temperature or RF microsystems
Authors: Flandre, D Adriaensen, S Akheyar, A Crahay, A Demeus, L Delatte, P Dessard, V Iniguez, B Neve, A Katschmarskyj, B Loumaye, P Laconte, J Martinez, I Picun, G Rauly, E Renaux, C Spote, D Zitout, M Dehan, M Parvais, B Simon, P Vanhoenacker, D Raskin, JP
Citation: D. Flandre et al., Fully depleted SOICMOS technology for heterogeneous micropower, high-temperature or RF microsystems, SOL ST ELEC, 45(4), 2001, pp. 541-549
Deep-submicrometer DC-to-RF SOI MOSFET macro-model
Authors: Iniguez, B Raskin, JP Demeus, L Neve, A Vanhoenacker, D Simon, P Goffioul, M Flandre, D
Citation: B. Iniguez et al., Deep-submicrometer DC-to-RF SOI MOSFET macro-model, IEEE DEVICE, 48(9), 2001, pp. 1981-1988
Self-heating and kink effects in a-Si : H thin film transistors
Authors: Wang, L Fjeldly, TA Iniguez, B Slade, HC Shur, M
Citation: L. Wang et al., Self-heating and kink effects in a-Si : H thin film transistors, IEEE DEVICE, 47(2), 2000, pp. 387-397
Unified model for short-channel poly-Si TFTs
Authors: Iniguez, B Xu, Z Fjeldly, TA Shur, MS
Citation: B. Iniguez et al., Unified model for short-channel poly-Si TFTs, SOL ST ELEC, 43(10), 1999, pp. 1821-1831
Microwave simulation on the performance of high power GaN/AlGaN heterostructure field effect transistors
Authors: Deng, J Iniguez, B Shur, MS Gaska, R Khan, MA Yang, JW
Citation: J. Deng et al., Microwave simulation on the performance of high power GaN/AlGaN heterostructure field effect transistors, PHYS ST S-A, 176(1), 1999, pp. 205-208
Modeling and simulation of single- and multiple-gate 2-D MESFET's
Authors: Iniguez, B Lu, JQ Hurt, MJ Peatman, WCB Shur, MS
Citation: B. Iniguez et al., Modeling and simulation of single- and multiple-gate 2-D MESFET's, IEEE DEVICE, 46(8), 1999, pp. 1742-1748
A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects
Authors: Jacunski, MD Shur, MS Owusu, AA Ytterdal, T Hack, M Iniguez, B
Citation: Md. Jacunski et al., A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects, IEEE DEVICE, 46(6), 1999, pp. 1146-1158
A physically-based C-infinity-continuous model for accumulation-mode SOI pMOSFET's
Authors: Iniguez, B Gentinne, B Dessard, V Flandre, D
Citation: B. Iniguez et al., A physically-based C-infinity-continuous model for accumulation-mode SOI pMOSFET's, IEEE DEVICE, 46(12), 1999, pp. 2295-2303
Risultati: 1-9 |