AAAAAA

   
Results: 1-13 |
Results: 13
High conductivity of synthetic diamond
Authors: Mamin, RF Inushima, T
Citation: Rf. Mamin et T. Inushima, High conductivity of synthetic diamond, SYNTH METAL, 121(1-3), 2001, pp. 1219-1220
Anisotropic superconductivity of InN grown by molecular beam epitaxy on sapphire (0001)
Authors: Inushima, T Vecksin, VV Ivanov, SV Davydov, VY Sakon, T Motokawa, M
Citation: T. Inushima et al., Anisotropic superconductivity of InN grown by molecular beam epitaxy on sapphire (0001), PHYS ST S-B, 228(1), 2001, pp. 9-12
Phase separation of Al1-xInxN grown at the resonance point of nitrogen-ECRplasma
Authors: Murano, K Inushima, T Ono, Y Shiraishi, T Ohoya, S Yasaka, S
Citation: K. Murano et al., Phase separation of Al1-xInxN grown at the resonance point of nitrogen-ECRplasma, PHYS ST S-B, 228(1), 2001, pp. 31-34
Conductivity in boron-doped diamond - art. no. 033201
Authors: Mamin, RF Inushima, T
Citation: Rf. Mamin et T. Inushima, Conductivity in boron-doped diamond - art. no. 033201, PHYS REV B, 6303(3), 2001, pp. 3201
Physical properties of InN with the band gap energy of 1.1eV
Authors: Inushima, T Mamutin, VV Vekshin, VA Ivanov, SV Sakon, T Motokawa, M Ohoya, S
Citation: T. Inushima et al., Physical properties of InN with the band gap energy of 1.1eV, J CRYST GR, 227, 2001, pp. 481-485
Hopping conduction via the excited states of boron in p-type diamond
Authors: Inushima, T Matsushita, T Ohya, S Shiomi, H
Citation: T. Inushima et al., Hopping conduction via the excited states of boron in p-type diamond, DIAM RELAT, 9(3-6), 2000, pp. 1066-1070
Heteroepitaxial growth of AlN at the resonance point of nitrogen-ECR plasma
Authors: Inushima, T Ashino, T Murano, K Shiraishi, T Davydov, VY Ohoya, S
Citation: T. Inushima et al., Heteroepitaxial growth of AlN at the resonance point of nitrogen-ECR plasma, J CRYST GR, 209(2-3), 2000, pp. 406-409
Comparison of AlN thin films grown on sapphire and cubic-SiC substrates byLP-MOCVD
Authors: Tanaka, Y Hasebe, Y Inushima, T Sandhu, A Ohoya, S
Citation: Y. Tanaka et al., Comparison of AlN thin films grown on sapphire and cubic-SiC substrates byLP-MOCVD, J CRYST GR, 209(2-3), 2000, pp. 410-414
Electrical measurements on p(+)-p(-)-p(+) homoepitaxial diamond capacitors
Authors: Inushima, T Matsushita, T Mamin, RF Ohya, S Shiomi, H
Citation: T. Inushima et al., Electrical measurements on p(+)-p(-)-p(+) homoepitaxial diamond capacitors, APPL PHYS L, 77(8), 2000, pp. 1173-1175
Phonons in hexagonal InN. Experiment and theory
Authors: Davydov, VY Klochikhin, AA Smirnov, MB Emtsev, VV Petrikov, VD Abroyan, IA Titov, AI Goncharuk, IN Smirnov, AN Mamutin, VV Ivanov, SV Inushima, T
Citation: Vy. Davydov et al., Phonons in hexagonal InN. Experiment and theory, PHYS ST S-B, 216(1), 1999, pp. 779-783
Phonon structure of InN grown by atomic layer epitaxy
Authors: Inushima, T Shiraishi, T Davydov, VY
Citation: T. Inushima et al., Phonon structure of InN grown by atomic layer epitaxy, SOL ST COMM, 110(9), 1999, pp. 491-495
X-ray study of crystal structure and diffuse scattering spectra of ferroelectric SbSBr having pseudo-Jahn-Teller phase transition
Authors: Inushima, T
Citation: T. Inushima, X-ray study of crystal structure and diffuse scattering spectra of ferroelectric SbSBr having pseudo-Jahn-Teller phase transition, J PHYS CH S, 60(5), 1999, pp. 587-598
Experimental and theoretical studies of phonons in hexagonal InN
Authors: Davydov, VY Emtsev, VV Goncharuk, IN Smirnov, AN Petrikov, VD Mamutin, VV Vekshin, VA Ivanov, SV Smirnov, MB Inushima, T
Citation: Vy. Davydov et al., Experimental and theoretical studies of phonons in hexagonal InN, APPL PHYS L, 75(21), 1999, pp. 3297-3299
Risultati: 1-13 |