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Results: 1-25 | 26-34
Results: 1-25/34
Sol-gel derived ferroelectric Pb(Zr1-xTix)O-3-SiO2-B2O3 glass-ceramic thinfilms formed at relatively low annealing temperatures
Authors: Wang, XH Ishiwara, H
Citation: Xh. Wang et H. Ishiwara, Sol-gel derived ferroelectric Pb(Zr1-xTix)O-3-SiO2-B2O3 glass-ceramic thinfilms formed at relatively low annealing temperatures, JPN J A P 1, 40(9B), 2001, pp. 5547-5550
Fabrication and characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures using ferroelectric (Bi, La)(4)Ti3O12 films
Authors: Tokumitsu, E Isobe, T Kijima, T Ishiwara, H
Citation: E. Tokumitsu et al., Fabrication and characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures using ferroelectric (Bi, La)(4)Ti3O12 films, JPN J A P 1, 40(9B), 2001, pp. 5576-5579
Low voltage operation of nonvolatile metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-field-effect-transistors (FETs) using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures
Authors: Tokumitsu, E Okamoto, K Ishiwara, H
Citation: E. Tokumitsu et al., Low voltage operation of nonvolatile metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-field-effect-transistors (FETs) using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures, JPN J A P 1, 40(4B), 2001, pp. 2917-2922
A novel simulation program with integrated circuit emphasis (SPICE) model of ferroelectric capacitors using Schmitt trigger circuit
Authors: Yamamoto, S Kato, T Ishiwara, H
Citation: S. Yamamoto et al., A novel simulation program with integrated circuit emphasis (SPICE) model of ferroelectric capacitors using Schmitt trigger circuit, JPN J A P 1, 40(4B), 2001, pp. 2928-2934
Fabrication and characterization of Pt/(Bi, La)(4)Ti3O12/Si3N4/Si metal ferroelectric insulator semiconductor structure for FET-type ferroelectric memory applications
Authors: Kijima, T Fujisaki, Y Ishiwara, H
Citation: T. Kijima et al., Fabrication and characterization of Pt/(Bi, La)(4)Ti3O12/Si3N4/Si metal ferroelectric insulator semiconductor structure for FET-type ferroelectric memory applications, JPN J A P 1, 40(4B), 2001, pp. 2977-2982
Structural and electrical properties of ferroelectric Pb(Zr1-xTix)O-3-SiO2glass-ceramic thin films derived by the sol-gel method
Authors: Wang, XS Ishiwara, H
Citation: Xs. Wang et H. Ishiwara, Structural and electrical properties of ferroelectric Pb(Zr1-xTix)O-3-SiO2glass-ceramic thin films derived by the sol-gel method, JPN J A P 1, 40(3A), 2001, pp. 1401-1407
Ferroelectricity of YMnO3 thin films on Pt(111)/Al2O3(0001) and Pt(111)/Y2O3(111)/Si(111) structures grown by molecular beam epitaxy
Authors: Imada, S Kuraoka, T Tokumitsu, E Ishiwara, H
Citation: S. Imada et al., Ferroelectricity of YMnO3 thin films on Pt(111)/Al2O3(0001) and Pt(111)/Y2O3(111)/Si(111) structures grown by molecular beam epitaxy, JPN J A P 1, 40(2A), 2001, pp. 666-671
Write and read-out operations of novel 1T2C-type ferroelectric memory cells with an array structure
Authors: Yoon, SM Ishiwara, H
Citation: Sm. Yoon et H. Ishiwara, Write and read-out operations of novel 1T2C-type ferroelectric memory cells with an array structure, JPN J A P 2, 40(5A), 2001, pp. L449-L452
Recent progress of FET-type ferroelectric memories
Authors: Ishiwara, H
Citation: H. Ishiwara, Recent progress of FET-type ferroelectric memories, INTEGR FERR, 34(1-4), 2001, pp. 1451-1460
Fabrication of PZT films on Si substrates by sol-gel method using Y2O3 buffer layers
Authors: Park, BE Ishiwara, H
Citation: Be. Park et H. Ishiwara, Fabrication of PZT films on Si substrates by sol-gel method using Y2O3 buffer layers, INTEGR FERR, 33(1-4), 2001, pp. 109-116
Special issue on nonvolatile memories - Foreword
Authors: Ishiwara, H
Citation: H. Ishiwara, Special issue on nonvolatile memories - Foreword, IEICE TR EL, E84C(6), 2001, pp. 711-712
Fabrication and characterization of 1T2C-type ferroelectric memory cell
Authors: Ogasawara, S Yoon, SM Ishiwara, H
Citation: S. Ogasawara et al., Fabrication and characterization of 1T2C-type ferroelectric memory cell, IEICE TR EL, E84C(6), 2001, pp. 771-776
A model for high frequency C-V characteristics of ferroelectric capacitors
Authors: Ogata, N Ishiwara, H
Citation: N. Ogata et H. Ishiwara, A model for high frequency C-V characteristics of ferroelectric capacitors, IEICE TR EL, E84C(6), 2001, pp. 777-784
A parallel element model for simulating switching response of ferroelectric capacitors
Authors: Tamura, T Arimoto, Y Ishiwara, H
Citation: T. Tamura et al., A parallel element model for simulating switching response of ferroelectric capacitors, IEICE TR EL, E84C(6), 2001, pp. 785-790
Characteristics of ferroelectric Pb(Zr,Ti)O-3 films epitaxially grown on CeO2(111)/Si(111) substrates
Authors: Moon, BK Ishiwara, H Tokumitsu, E Yoshimoto, M
Citation: Bk. Moon et al., Characteristics of ferroelectric Pb(Zr,Ti)O-3 films epitaxially grown on CeO2(111)/Si(111) substrates, THIN SOL FI, 385(1-2), 2001, pp. 307-310
Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics
Authors: Yoon, SM Ishiwara, H
Citation: Sm. Yoon et H. Ishiwara, Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics, IEEE DEVICE, 48(9), 2001, pp. 2002-2008
Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures
Authors: Park, BE Ishiwara, H
Citation: Be. Park et H. Ishiwara, Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures, APPL PHYS L, 79(6), 2001, pp. 806-808
High-performance metal-ferroelectric-insulator-semiconductor structures with a damage-free and hydrogen-free silicon-nitride buffer layer
Authors: Fujisaki, Y Kijima, T Ishiwara, H
Citation: Y. Fujisaki et al., High-performance metal-ferroelectric-insulator-semiconductor structures with a damage-free and hydrogen-free silicon-nitride buffer layer, APPL PHYS L, 78(9), 2001, pp. 1285-1287
Characterization of metal-ferroelectric-(metal-)insulator-Semiconductor (MF(M)IS) structures using (Pb, La)(Zr, Ti)O-3 and Y2O3 films
Authors: Tokumitsu, E Takahashi, D Ishiwara, H
Citation: E. Tokumitsu et al., Characterization of metal-ferroelectric-(metal-)insulator-Semiconductor (MF(M)IS) structures using (Pb, La)(Zr, Ti)O-3 and Y2O3 films, JPN J A P 1, 39(9B), 2000, pp. 5456-5459
Improvement of memory retention characteristics in ferroelectric neuron circuits using a Pt/SrBi2Ta2O9/Pt/Ti/SiO2/Si structure-field effect transistor as a synapse device
Authors: Yoon, SM Tokumitsu, E Ishiwara, H
Citation: Sm. Yoon et al., Improvement of memory retention characteristics in ferroelectric neuron circuits using a Pt/SrBi2Ta2O9/Pt/Ti/SiO2/Si structure-field effect transistor as a synapse device, JPN J A P 1, 39(4B), 2000, pp. 2119-2124
Electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS)-and metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-FETs using ferroelectric SrBi2Ta2O9 film and SrTa2O6/SiON buffer layer
Authors: Tokumitsu, E Fujii, G Ishiwara, H
Citation: E. Tokumitsu et al., Electrical properties of metal-ferroelectric-insulator-semiconductor (MFIS)-and metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-FETs using ferroelectric SrBi2Ta2O9 film and SrTa2O6/SiON buffer layer, JPN J A P 1, 39(4B), 2000, pp. 2125-2130
Correlation between ferroelectricity and grain structures of face-to-face annealed strontium bismuth tantalate thin films
Authors: Aizawa, K Ishiwara, H
Citation: K. Aizawa et H. Ishiwara, Correlation between ferroelectricity and grain structures of face-to-face annealed strontium bismuth tantalate thin films, JPN J A P 2, 39(11B), 2000, pp. L1191-L1193
Damage-free and hydrogen-free nitridation of silicon substrate by nitrogenradical source
Authors: Fujisaki, Y Ishiwara, H
Citation: Y. Fujisaki et H. Ishiwara, Damage-free and hydrogen-free nitridation of silicon substrate by nitrogenradical source, JPN J A P 2, 39(11A), 2000, pp. L1075-L1077
Ferroelectric neuron integrated circuits using SrBi2Ta2O9-gate FET's and CMOS Schmitt-trigger oscillators
Authors: Yoon, SM Tokumitsu, E Ishiwara, H
Citation: Sm. Yoon et al., Ferroelectric neuron integrated circuits using SrBi2Ta2O9-gate FET's and CMOS Schmitt-trigger oscillators, IEEE DEVICE, 47(8), 2000, pp. 1630-1635
Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films
Authors: Aizawa, K Tokumitsu, E Okamoto, K Ishiwara, H
Citation: K. Aizawa et al., Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films, APPL PHYS L, 76(18), 2000, pp. 2609-2611
Risultati: 1-25 | 26-34