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Citation: J. Labis et al., Interfacial reaction study of thermally annealed Ti film on 4H-SiC by softX-ray emission spectroscopy, SURF SCI, 493(1-3), 2001, pp. 447-452
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Iwami, M
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Fujimoto, T
Hirai, M
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Citation: M. Iwami et al., Studies of 4H-SiC(0001)Si(root 3 x root 3) and (0001)C(3 x 3) surfaces andtheir metallization process by Ni using STM, AES and LEED, SURF REV L, 7(5-6), 2000, pp. 679-682
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Mihara, I
An, ZL
Kinoshita, A
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Citation: I. Mihara et al., Characterization of the buried interface in a Ni (film) /3C-SiC (substrate) system using SXES, APPL SURF S, 159, 2000, pp. 197-200
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Citation: Ez. Kurmaev et al., Soft-x-ray fluorescence study of the quasi-one-dimensional Heisenberg antiferromagnet tetraphenylverdazyl, PHYS REV B, 62(23), 2000, pp. 15660-15665
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Nagai, SY
Tamiya, A
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Kino, T
Citation: K. Mizuno et al., Indistinct defect images in topographs of nearly perfect aluminum crystalsjust prior to appearance of dislocation loops, J PHYS JPN, 69(5), 2000, pp. 1271-1273