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Results:
1-20
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Results: 20
Authors:
COLGAN EG
ALT PM
WISNIEFF RL
FRYER PM
GALLIGAN EA
GRAHAM WS
GREIER PF
HORTON RR
IFILL H
JENKINS LC
JOHN RA
KAUFMAN RI
KUO Y
LANZETTA AP
LATZKO KF
LIBSCH FR
LIEN SCA
MILLMAN SE
NYWENING RW
POLASTRE RJ
POWELL CG
RAND RA
RITSKO JJ
ROTHWELL MB
STAPLES JL
WARREN KW
WILSON JS
WRIGHT SL
Citation: Eg. Colgan et al., A 10.5-IN-DIAGONAL SXGA ACTIVE-MATRIX DISPLAY, IBM journal of research and development, 42(3-4), 1998, pp. 427-444
Authors:
ORTON JW
LACKLISON DE
ANDRIANOV AV
CHENG TS
DEWSNIP DJ
FOXON CT
JENKINS LC
HOOPER SE
Citation: Jw. Orton et al., PHOTOLUMINESCENCE STUDY OF SILICON-DOPED GAN GROWN BY MBE ON GAAS SUBSTRATES, Solid-state electronics, 41(2), 1997, pp. 219-222
Authors:
MIRJALILI G
DUMELOW T
PARKER TJ
SHAYESTEH SF
CHENG TS
FOXON CT
JENKINS LC
LACKLINSON DE
Citation: G. Mirjalili et al., FAR-INFRARED SPECTROSCOPY OF THIN EPITAXIAL LAYERS OF GAN DEPOSITED BY MOLECULAR-BEAM EPITAXY ON GAP SUBSTRATES, Infrared physics & technology, 37(3), 1996, pp. 389-394
Authors:
FOXON CT
CHENG TS
HOOPER SE
JENKINS LC
ORTON JW
LACKLISON DE
NOVIKOV SV
POPOVA TB
TRETYAKOV VV
Citation: Ct. Foxon et al., MOLECULAR-BEAM EPITAXY GROWTH-KINETICS FOR GROUP-III NITRIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2346-2348
Authors:
BER BY
MERKULOV AV
NOVIKOV SV
TRETYAKOV VV
CHENG TS
FOXON CT
JENKINS LC
HOOPER SE
LACKLISON DE
ORTON JW
Citation: By. Ber et al., IMPLANTATION OF AS IN GAN EPITAXIAL LAYERS DURING MOLECULAR-BEAM EPITAXY, Semiconductors, 30(3), 1996, pp. 293-296
Authors:
CHENG TS
JENKINS LC
HOOPER SE
FOXON CT
BER BY
MERKULOV AV
NOVIKOV SV
TRETYAKOV VV
Citation: Ts. Cheng et al., IMPURITY DISTRIBUTION IN GAN LAYERS OBTAINED BY THE MOLECULAR-BEAM EPITAXY METHOD, Semiconductors, 30(2), 1996, pp. 164-166
Authors:
CHENG TS
FOXON CT
JENKINS LC
HOOPER SE
LACKLISON DE
ORTON JW
BER BY
MERKULOV AV
NOVIKOV SV
Citation: Ts. Cheng et al., SECONDARY-ION MASS-SPECTROSCOPY (SIMS) INVESTIGATIONS OF BE AND SI INCORPORATION IN GAN GROWN BY MOLECULAR-BEAM EPITAXY (MBE), Semiconductor science and technology, 11(4), 1996, pp. 538-541
Authors:
CHENG TS
HOOPER SE
JENKINS LC
FOXON CT
LACKLISON DE
DEWSNIP JD
ORTON JW
Citation: Ts. Cheng et al., OPTICAL-PROPERTIES OF DOPED GAN GROWN BY A MODIFIED MOLECULAR-BEAM EPITAXIAL (MBE) PROCESS ON GAAS SUBSTRATES, Journal of crystal growth, 166(1-4), 1996, pp. 597-600
Authors:
CHENG TS
FOXON CT
JENKINS LC
HOOPER SE
ORTON JW
NOVIKOV SV
POPOVA TB
TRETYAKOV VV
Citation: Ts. Cheng et al., MECHANISMS OF NITROGEN INCORPORATION IN (ALGA)(ASN) FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 158(4), 1996, pp. 399-402
Authors:
HUANG X
CHENG TS
HOOPER SE
FOSTER TJ
JENKINS LC
WANG J
FOXON CT
ORTON JW
EAVES L
MAIN PC
Citation: X. Huang et al., ELECTRICAL CHARACTERIZATION OF SINGLE BARRIER GAAS GAN/GAAS HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1582-1584
Authors:
JENKINS LC
CHENG TS
FOXON CT
HOOPER SE
ORTON JW
NOVIKOV SV
TRETYAKOV VV
Citation: Lc. Jenkins et al., AUGER-ELECTRON SPECTROSCOPY, X-RAY-DIFFRACTION, AND SCANNING ELECTRON-MICROSCOPY OF INN, GAN, AND GA(ASN) FILMS ON GAP AND GAAS(001) SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1585-1590
Authors:
ORTON JW
LACKLISON DE
BABAALI N
FOXON CT
CHENG TS
NOVIKOV SV
JOHNSTON DFC
HOOPER SE
JENKINS LC
CHALLIS LJ
TANSLEY TL
Citation: Jw. Orton et al., THE GROWTH AND PROPERTIES OF MIXED GROUP-V NITRIDES, Journal of electronic materials, 24(4), 1995, pp. 263-268
Authors:
ZINOVEV NN
ANDRIANOV AV
AVERBUKH BY
YAROSHETSKII ID
CHENG TS
JENKINS LC
HOOPER SE
FOXON CT
ORTON JW
Citation: Nn. Zinovev et al., PHOTOLUMINESCENCE AND RAMAN-SCATTERING FROM GAN LAYERS GROWN ON GAAS AND GAP SUBSTRATES, Semiconductor science and technology, 10(8), 1995, pp. 1117-1121
Authors:
HOOPER SE
FOXON CT
CHENG TS
JENKINS LC
LACKLISON DE
ORTON JW
BESTWICK T
KEAN A
DAWSON M
DUGGAN G
Citation: Se. Hooper et al., SOME ASPECTS OF GAN GROWTH ON GAAS(100) SUBSTRATES USING MOLECULAR-BEAM EPITAXY WITH AN RF ACTIVATED NITROGEN-PLASMA SOURCE, Journal of crystal growth, 155(3-4), 1995, pp. 157-163
Authors:
FOXON CT
CHENG TS
NOVIKOV SV
LACKLISON DE
JENKINS LC
JOHNSTON D
ORTON JW
HOOPER SE
BABAALI N
TANSLEY TL
TRETYAKOV VV
Citation: Ct. Foxon et al., THE GROWTH AND PROPERTIES OF GROUP-III NITRIDES, Journal of crystal growth, 150(1-4), 1995, pp. 892-896
Authors:
NOVIKOV SV
FOXON CT
CHENG TS
TANSLEY TL
ORTON JW
LACKLISON DE
JOHNSTON D
BABAALI N
HOOPER SE
JENKINS LC
EAVES L
Citation: Sv. Novikov et al., AUGER INVESTIGATION OF GROUP-III NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 146(1-4), 1995, pp. 340-343
Authors:
LACKLISON DE
ORTON JW
HARRISON I
CHENG TS
JENKINS LC
FOXON CT
HOOPER SE
Citation: De. Lacklison et al., BAND-GAP OF GAN FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS AND GAPSUBSTRATES, Journal of applied physics, 78(3), 1995, pp. 1838-1842
Authors:
CHENG TS
JENKINS LC
HOOPER SE
FOXON CT
ORTON JW
LACKLISON DE
Citation: Ts. Cheng et al., SELECTIVE GROWTH OF ZINCBLENDE, WURTZITE, OR A MIXED-PHASE OF GALLIUMNITRIDE BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 66(12), 1995, pp. 1509-1511
Authors:
JENKINS LC
GRIFFITHS CL
HUGHES A
RICHARDS J
WILLIAMS RH
Citation: Lc. Jenkins et al., EPITAXIAL RARE-EARTH FLUORIDE INSULATING LAYERS ON SEMICONDUCTORS - STRUCTURE, PHASE-TRANSITIONS, AND INTERFACE REACTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1541-1545
Authors:
GRIFFITHS CL
JENKINS LC
HUGHES A
WILLIAMS RH
Citation: Cl. Griffiths et al., EPITAXIAL INSULATING FLUORIDE LAYERS ON SEMICONDUCTORS, Journal of solid state chemistry, 106(1), 1993, pp. 150-155
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