AAAAAA

   
Results: 1-25 | 26-50 | 51-75 | 76-100 | >>
Results: 76-100/113

Authors: HU SJ FAHY MR SATO K JOYCE BA
Citation: Sj. Hu et al., TIN AS AN N-TYPE DOPANT IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS(111)A, Journal of crystal growth, 150(1-4), 1995, pp. 227-230

Authors: ZHANG XM PASHLEY DW KAMIYA I NEAVE JH JOYCE BA
Citation: Xm. Zhang et al., THE NUCLEATION AND GROWTH BY MOLECULAR-BEAM EPITAXY OF INAS ON GAAS(110) MISORIENTED SUBSTRATES, Journal of crystal growth, 147(1-2), 1995, pp. 234-237

Authors: ZHANG X PASHLEY DW NEAVE JH HART L JOYCE BA
Citation: X. Zhang et al., THE STRAIN RELAXATION OF IN0.1GA0.9AS ON GAAS(110) GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 78(11), 1995, pp. 6454-6457

Authors: KANEKO T JOYCE BA NAJI O JONES TS
Citation: T. Kaneko et al., DETERMINATION OF THE EXCESS SURFACE ARSENIC CONCENTRATION IN THE METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TMGA AND AS-2, Applied physics letters, 67(7), 1995, pp. 998-1000

Authors: HOLMES DM BELK JG SUDIJONO JL NEAVE JH JONES TS JOYCE BA
Citation: Dm. Holmes et al., DIFFERENCES BETWEEN AS-2 AND AS-4 IN THE HOMOEPITAXIAL GROWTH OF GAAS(110) BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 67(19), 1995, pp. 2848-2850

Authors: AVERY AR SUDIJONO J HOLMES DM JONES TS JOYCE BA
Citation: Ar. Avery et al., SI-INDUCED ISLAND FORMATION AND SURFACE ORDERING ON GAAS(001)-C(4X4), Applied physics letters, 66(23), 1995, pp. 3200-3202

Authors: OHTANI N MOKLER S XIE MH ZHANG J JOYCE BA
Citation: N. Ohtani et al., SURFACE HYDROGEN EFFECTS ON GE SURFACE SEGREGATION DURING SILICON GAS-SOURCE MOLECULAR-BEAM EPITAXY, JPN J A P 1, 33(4B), 1994, pp. 2311-2316

Authors: SATO K FAHY MR JOYCE BA
Citation: K. Sato et al., THE GROWTH OF HIGH-QUALITY GAAS ON GAAS (111)A, JPN J A P 2, 33(7A), 1994, pp. 120000905-120000907

Authors: JOYCE BA VVEDENSKY DD
Citation: Ba. Joyce et Dd. Vvedensky, ATOMIC ARRANGEMENTS - JOIN JAPAN TO A UK UNIVERSITY, Advanced materials, 6(4), 1994, pp. 265-268

Authors: JOYCE BA ZHANG XM NEAVE JH FAWCETT PN FAHY MR SATO K KAMIYA I
Citation: Ba. Joyce et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) INTENSITY OSCILLATIONS - GROWTH MODES AND GROWTH-RATES - A CRITIQUE, Scanning microscopy, 8(4), 1994, pp. 913-924

Authors: ZHANG J MARINOPOULOU A HARTUNG J LIGHTOWLERS EC ANWAR N PARRY G XIE MH MOKLER SM WU XD JOYCE BA
Citation: J. Zhang et al., GROWTH AND CHARACTERIZATION OF SI1-XGEX SI MULTILAYERS ON PATTERNED SI(001) SUBSTRATES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1139-1141

Authors: FAWCETT PN NEAVE JH ZHANG J JOYCE BA
Citation: Pn. Fawcett et al., STUDY OF THE EPITAXIAL-GROWTH OF GAAS(110) FILMS BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1201-1203

Authors: FAHY MR SATO K JOYCE BA
Citation: Mr. Fahy et al., SILICON DOPING WITH MODULATED BEAM EPITAXY IN THE GROWTH OF GAAS(111)A, Applied surface science, 82-3, 1994, pp. 14-17

Authors: AVERY AR HOLMES DM JONES TS JOYCE BA BRIGGS GAD
Citation: Ar. Avery et al., ARSENIC-DEFICIENT GAAS(001)-(2X4) SURFACES - SCANNING-TUNNELING-MICROSCOPY EVIDENCE FOR LOCALLY DISORDERED (1X2) GA REGIONS, Physical review. B, Condensed matter, 50(11), 1994, pp. 8098-8101

Authors: XIE MH ZHANG J MOKLER SM FERNANDEZ J JOYCE BA
Citation: Mh. Xie et al., GROWTH DYNAMICS STUDIED BY RHEED DURING SI GE EPITAXY FROM GASEOUS HYDRIDES/, Surface science, 320(3), 1994, pp. 259-270

Authors: SATO K FAHY MR JOYCE BA
Citation: K. Sato et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION STUDY OF THE GROWTH OF GAAS ON GAAS(111)A, Surface science, 315(1-2), 1994, pp. 105-111

Authors: KANEKO T NAJI O JONES TS JOYCE BA
Citation: T. Kaneko et al., THE ROLE OF EXCESS ARSENIC DURING THE METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS FROM TRIMETHYLGALLIUM AND AS2, Journal of crystal growth, 136(1-4), 1994, pp. 99-103

Authors: DOSANIH SS HART L NAYAK R JOYCE BA
Citation: Ss. Dosanih et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE IN THE 1-MU-M REGION FROM INAS MONOLAYER STRUCTURES, Journal of applied physics, 75(12), 1994, pp. 8066-8070

Authors: XIE MH ZHANG J MOKLER SM FERNANDEZ JM JOYCE BA
Citation: Mh. Xie et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS OFGERMANIUM GROWTH ON SI(100) USING GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(24), 1994, pp. 3066-3068

Authors: FAHY MR SATO K JOYCE BA
Citation: Mr. Fahy et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAAS (111)A, Applied physics letters, 64(2), 1994, pp. 190-192

Authors: JOYCE BA OHTANI N MOKLER SM SHITARA T ZHANG J NEAVE JH FAWCETT PN
Citation: Ba. Joyce et al., APPLICATIONS OF RHEED TO THE STUDY OF GROWTH DYNAMICS AND SURFACE-CHEMISTRY DURING MBE, Surface science, 298(2-3), 1993, pp. 399-407

Authors: MOKLER SM JOYCE BA
Citation: Sm. Mokler et Ba. Joyce, SI1-XGEX ALLOY GROWTH ON SI(111) SURFACES FROM GASEOUS HYDRIDE SOURCES, Surface science, 298(1), 1993, pp. 43-49

Authors: FAWCETT PN NEAVE JH ZHANG J JOYCE BA
Citation: Pn. Fawcett et al., THE OBSERVATION OF MONOLAYER AND BILAYER GROWTH DURING THE DEPOSITIONOF GAAS(110) FILMS BY MOLECULAR-BEAM EPITAXY, Surface science, 296(1), 1993, pp. 67-74

Authors: OHTANI N MOKLER SM JOYCE BA
Citation: N. Ohtani et al., SIMULATION STUDIES OF GE SURFACE SEGREGATION DURING GAS-SOURCE MBE GROWTH OF SI SI1-XGEX HETEROSTRUCTURES/, Surface science, 295(3), 1993, pp. 325-334

Authors: ARMSTRONG SR HOARE RD PEMBLE ME POVEY IM STAFFORD A TAYLOR AG JOYCE BA NEAVE JH ZHANG J
Citation: Sr. Armstrong et al., OPTICAL 2ND-HARMONIC GENERATION STUDIES OF THE NATURE OF THE OXIDE-COVERED AND CLEAN C(4X4) AND (2X4) RECONSTRUCTED GAAS(001) SURFACES, Surface science, 291(3), 1993, pp. 120000751-120000755
Risultati: 1-25 | 26-50 | 51-75 | 76-100 | >>