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Results: 1-25/81
Authors:
Fu, L
Tan, HH
Jagadish, C
Li, N
Li, N
Liu, X
Lu, W
Shen, SC
Citation: L. Fu et al., Tuning of detection wavelength of quantum-well infrared photodetectors by quantum-well intermixing, INFR PHYS T, 42(3-5), 2001, pp. 171-175
Authors:
Deenapanray, PNK
Jagadish, C
Citation: Pnk. Deenapanray et C. Jagadish, Effect of stress on impurity-free quantum well intermixing, EL SOLID ST, 4(2), 2001, pp. G11-G13
Authors:
Deenapanray, PNK
Jagadish, C
Citation: Pnk. Deenapanray et C. Jagadish, Impurity-free intermixing of GaAs/AlGaAs quantum wells using SiOx capping:Effect of nitrous oxide flow rate, J VAC SCI B, 19(5), 2001, pp. 1962-1966
Authors:
Cohen, MI
Allerman, AA
Choquette, KD
Jagadish, C
Citation: Mi. Cohen et al., Electrically steerable lasers using wide-aperture VCSELs, IEEE PHOTON, 13(6), 2001, pp. 544-546
Authors:
Dao, LV
Gal, M
Fu, L
Tan, HH
Jagadish, C
Citation: Lv. Dao et al., Possibility of improved frequency response from intermixed quantum-well devices, SUPERLATT M, 29(2), 2001, pp. 105-110
Authors:
Lu, W
Liu, XQ
Li, ZF
Shen, SC
Zhao, QX
Fu, Y
Willander, M
Tan, HH
Jagadish, C
Zou, J
Cockayne, DJH
Citation: W. Lu et al., Carrier transfer between V-grooved quantum wire and vertical quantum well, PHYS LETT A, 280(1-2), 2001, pp. 77-80
Authors:
Kucheyev, SO
Williams, JS
Zou, J
Jagadish, C
Li, G
Citation: So. Kucheyev et al., The effects of ion mass, energy, dose, flux and irradiation temperature onimplantation disorder in GaN, NUCL INST B, 178, 2001, pp. 209-213
Authors:
Kucheyev, SO
Williams, JS
Zou, J
Jagadish, C
Li, G
Citation: So. Kucheyev et al., High-dose ion implantation into GaN, NUCL INST B, 175, 2001, pp. 214-218
Authors:
Boudinov, H
de Souza, JP
Jagadish, C
Citation: H. Boudinov et al., Electrical isolation of n-type InP by ion bombardment: Dose dependence andthermal stability, NUCL INST B, 175, 2001, pp. 235-240
Authors:
Gal, M
Wengler, MC
Ilyas, S
Rofii, I
Tan, HH
Jagadish, C
Citation: M. Gal et al., Measurement of the damage profile of ion-implanted GaAs using an automatedoptical profiler, NUCL INST B, 173(4), 2001, pp. 528-532
Authors:
Pellegrino, P
Leveque, P
Lalita, J
Hallen, A
Jagadish, C
Svensson, BG
Citation: P. Pellegrino et al., Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon - art. no. 195211, PHYS REV B, 6419(19), 2001, pp. 5211
Authors:
Kucheyev, SO
Williams, JS
Jagadish, C
Zou, J
Li, G
Titov, AI
Citation: So. Kucheyev et al., Effect of ion species on the accumulation of ion-beam damage in GaN - art.no. 035202, PHYS REV B, 6403(3), 2001, pp. 5202
Authors:
Kucheyev, SO
Williams, JS
Zou, J
Bradby, JE
Jagadish, C
Li, G
Citation: So. Kucheyev et al., Ion-beam-induced reconstruction of amorphous GaN - art. no. 113202, PHYS REV B, 6311(11), 2001, pp. 3202
Authors:
Lederer, MJ
Kolev, V
Luther-Davies, B
Tan, HH
Jagadish, C
Citation: Mj. Lederer et al., Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking, J PHYS D, 34(16), 2001, pp. 2455-2464
Authors:
Li, N
Fu, L
Li, N
Chan, YC
Lu, W
Shen, SC
Tan, HH
Jagadish, C
Citation: N. Li et al., The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors, J CRYST GR, 222(4), 2001, pp. 786-790
Authors:
Liu, XQ
Sasaki, A
Ohno, N
Li, ZF
Lu, W
Shen, SC
Fu, Y
Willander, M
Tan, HH
Jagadish, C
Citation: Xq. Liu et al., Evidence of blocking effect on carrier trapping process by necking region in very narrow AlGaAs/GaAs V-grooved quantum wire structure, J APPL PHYS, 90(10), 2001, pp. 5438-5440
Authors:
Wong-Leung, J
Jagadish, C
Conway, MJ
Fitz Gerald, JD
Citation: J. Wong-leung et al., Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon, J APPL PHYS, 89(5), 2001, pp. 2556-2559
Authors:
Fu, Y
Willander, M
Liu, XQ
Lu, W
Shen, SC
Tan, HH
Jagadish, C
Zou, J
Cockayne, DJH
Citation: Y. Fu et al., Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire, J APPL PHYS, 89(4), 2001, pp. 2351-2356
Authors:
Boudinov, H
Tan, HH
Jagadish, C
Citation: H. Boudinov et al., Electrical isolation of n-type and p-type InP layers by proton bombardment, J APPL PHYS, 89(10), 2001, pp. 5343-5347
Authors:
Deenapanray, PNK
Martin, A
Jagadish, C
Citation: Pnk. Deenapanray et al., Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers, APPL PHYS L, 79(16), 2001, pp. 2561-2563
Authors:
Kucheyev, SO
Toth, M
Phillips, MR
Williams, JS
Jagadish, C
Citation: So. Kucheyev et al., Effects of excitation density on cathodoluminescence from GaN, APPL PHYS L, 79(14), 2001, pp. 2154-2156
Authors:
Boudinov, H
Kucheyev, SO
Williams, JS
Jagadish, C
Li, G
Citation: H. Boudinov et al., Electrical isolation of GaN by MeV ion irradiation, APPL PHYS L, 78(7), 2001, pp. 943-945
Authors:
Pellegrino, P
Leveque, P
Wong-Leung, J
Jagadish, C
Svensson, BG
Citation: P. Pellegrino et al., Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation, APPL PHYS L, 78(22), 2001, pp. 3442-3444
Authors:
Kucheyev, SO
Bradby, JE
Williams, JS
Jagadish, C
Swain, MV
Li, G
Citation: So. Kucheyev et al., Deformation behavior of ion-beam-modified GaN, APPL PHYS L, 78(2), 2001, pp. 156-158
Authors:
Kucheyev, SO
Williams, JS
Titov, AI
Li, G
Jagadish, C
Citation: So. Kucheyev et al., Effect of the density of collision cascades on implantation damage in GaN, APPL PHYS L, 78(18), 2001, pp. 2694-2696