Authors: Lin, CL Su, YK Chang, JR Chen, SM Li, WL Jaw, DH

Citation: Cl. Lin et al., Temperature dependence of barrier height and energy bandgap in Au/n-GaSb Schottky diode, JPN J A P 2, 39(5A), 2000, pp. L400-L401

Authors: Chang, JR Su, YK Lin, CL Jaw, DH Lin, W

Citation: Jr. Chang et al., GaInAsSb/InP multiple-quantum-well structure grown by metalorganic vapor-phase epitaxy, J CRYST GR, 206(4), 1999, pp. 263-266

Authors: Chang, JR Su, YK Jaw, DH Shiao, HP Lin, W

Citation: Jr. Chang et al., Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb InGaAs multiple-quantum-well structures, J CRYST GR, 203(4), 1999, pp. 481-485

Authors: Chang, JR Su, YK Lin, CL Wu, KM Huang, WC Lu, YT Jaw, DH Li, WL Chen, SM

Citation: Jr. Chang et al., Measurement of AlInAsSb GaInAsSb heterojunction band offset by photoluminescence spectroscopy, APPL PHYS L, 75(2), 1999, pp. 238-240

Authors: Chang, JR Su, YK Lu, YT Jaw, DH Shiao, HP Lin, W

Citation: Jr. Chang et al., Determination of the valence-band offset for GaInAsSb/InP heterostructure, APPL PHYS L, 74(5), 1999, pp. 717-719

Authors: Chang, JR Su, YK Lin, CL Wu, KM Lu, YT Jaw, DH Shiao, HP Lin, W

Citation: Jr. Chang et al., High conduction-band offset of AlInAsSb InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy, APPL PHYS L, 74(23), 1999, pp. 3495-3497