Authors:
Kim, JK
Kim, CC
Cho, TS
Je, JH
Kwak, JS
Park, YJ
Lee, JL
Citation: Jk. Kim et al., Effects of surface treatments on the electrical and the microstructural changes of Pd contact an p-type GaN, J ELEC MAT, 30(3), 2001, pp. 170-174
Authors:
Kim, SS
Il Kim, B
Park, YB
Kang, TS
Je, JH
Citation: Ss. Kim et al., Growth of a textured Pb(Zr0.4Ti0.6)O-3 thin film on LaNiO3/Si(001) using pulsed laser deposition, APPL SURF S, 169, 2001, pp. 553-556
Authors:
Kim, CC
Je, JH
Yi, MS
Noh, DY
Ruterana, P
Citation: Cc. Kim et al., In-plane tensile-strained interfacial structure in a GaN nucleation layer on sapphire(0001), J APPL PHYS, 90(5), 2001, pp. 2191-2194
Citation: Ts. Kang et al., Thermal stability of RuO2, BaxSr1-xTiO3/RuO2, and BaxSr1-xTiO3/Pt/Ti/SiO2 on Si(100), J MATER RES, 15(9), 2000, pp. 1955-1961
Citation: Ss. Kim et al., Structures and properties of (00l)-oriented Pb(Zr,Ti)O-3 films on LaNiO3/Si(001) substrates by pulsed laser deposition, J MATER RES, 15(12), 2000, pp. 2881-2886
Citation: Ss. Kim et al., Graphitization of ultrathin amorphous carbon films on Si(001) by Ar+ ion irradiation at ambient temperature, J APPL PHYS, 88(1), 2000, pp. 55-58
Citation: Si. Park et al., Structural evolution of ZnO/sapphire(001) heteroepitaxy studied by real time synchrotron x-ray scattering, APPL PHYS L, 77(3), 2000, pp. 349-351
Citation: Ts. Cho et al., Formation of crystalline Ba-ferrite phase from alpha-Fe2O3 phase in amorphous precursor, APPL PHYS L, 76(3), 2000, pp. 303-305