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Results:
1-7
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Results: 7
Authors:
Fadlallah, M
Szewczyk, A
Giannakopoulos, C
Cretu, B
Monsieur, F
Devoivre, T
Jomaah, J
Ghibaudo, G
Citation: M. Fadlallah et al., Low frequency noise and reliability properties of 0.12 mu m CMOS devices with Ta2O5 as gate dielectrics, MICROEL REL, 41(9-10), 2001, pp. 1361-1366
Authors:
Dieudonne, F
Dauge, F
Jomaah, J
Raynaud, C
Balestra, F
Citation: F. Dieudonne et al., An overview of hot-carrier induced degradation in 0.25 mu m Partially and Fully Depleted SOIN-MOSFET's, MICROEL REL, 41(9-10), 2001, pp. 1417-1420
Authors:
Haendler, S
Jomaah, J
Ghibaudo, G
Balestra, F
Citation: S. Haendler et al., Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors, MICROEL REL, 41(6), 2001, pp. 855-860
Authors:
Munteanu, D
Cristoloveanu, S
Rozeau, O
Jomaah, J
Boussey, J
Wetzel, M
de la Houssaye, P
Lagnado, I
Citation: D. Munteanu et al., Characterization of silicon-on-sapphire material and devices for radio frequency applications, J ELCHEM SO, 148(4), 2001, pp. G218-G224
Authors:
Haendler, S
Jomaah, J
Balestra, F
Pelloie, JL
Raynaud, C
Citation: S. Haendler et al., Kink-related excess noise in deep submicron partially and moderately fullydepleted unibond N-metal oxide semiconductor field effect transistor (MOSFET), JPN J A P 1, 39(4B), 2000, pp. 2261-2263
Authors:
Rozeau, O
Jomaah, J
Boussey, J
Omura, Y
Citation: O. Rozeau et al., Comparison between high- and low-dose separation by implanted oxygen MOS transistors for low-power radio-frequency applications, JPN J A P 1, 39(4B), 2000, pp. 2264-2267
Authors:
Rozeau, O
Jomaah, J
Haendler, S
Boussey, J
Balestra, F
Citation: O. Rozeau et al., SOI technologies overview for low-power low-voltage radio-frequency applications, ANALOG IN C, 25(2), 2000, pp. 93-114
Risultati:
1-7
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