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Results:
1-14
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Results: 14
Authors:
Fosse, N
Joubert, O
Ganne, M
Brohan, L
Citation: N. Fosse et al., Crystal structure and thermal analysis of the tetramethylammonium dichromate and trichromate, SOLID ST SC, 3(1-2), 2001, pp. 121-132
Authors:
Desvoivres, L
Vallier, L
Joubert, O
Citation: L. Desvoivres et al., X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes, J VAC SCI B, 19(2), 2001, pp. 420-426
Authors:
Fuard, D
Joubert, O
Vallier, L
Bonvalot, M
Citation: D. Fuard et al., High density plasma etching of low k dielectric polymers in oxygen-based chemistries, J VAC SCI B, 19(2), 2001, pp. 447-455
Authors:
Magrez, A
Cochet, M
Joubert, O
Louarn, G
Ganne, M
Chauvet, O
Citation: A. Magrez et al., High internal stresses in Sr1-xLa1+xAl1-xMgxO4 solid solution (0 <= x <= (0.7)) characterized by infrared and Raman spectroscopies coupled with crystal structure refinement, CHEM MATER, 13(11), 2001, pp. 3893-3898
Authors:
Monget, C
Joubert, O
Inglebert, RL
Citation: C. Monget et al., Plasma polymerized methylsilane I: Characterization of thin photosensitivefilms for advanced lithography applications, J VAC SCI B, 18(5), 2000, pp. 2534-2542
Authors:
Monget, C
Joubert, O
Citation: C. Monget et O. Joubert, Plasma polymerized methylsilane. II. Performance for 248 nm lithography, J VAC SCI B, 18(2), 2000, pp. 785-792
Authors:
Joubert, O
Fuard, D
Monget, C
Weidman, T
Citation: O. Joubert et al., Plasma polymerized methylsilane. III. Process optimization for 193 nm lithography applications, J VAC SCI B, 18(2), 2000, pp. 793-798
Authors:
Desvoivres, L
Vallier, L
Joubert, O
Citation: L. Desvoivres et al., Sub-0.1 mu m gate etch processes: Towards some limitations of the plasma technology?, J VAC SCI B, 18(1), 2000, pp. 156-165
Authors:
Joubert, O
Czuprynski, P
Citation: O. Joubert et P. Czuprynski, Characterization of dielectric etching processes by X-ray photoelectron spectroscopy analyses in high aspect ratio contact holes, JPN J A P 1, 38(10), 1999, pp. 6154-6160
Authors:
Monget, C
Joubert, O
Citation: C. Monget et O. Joubert, X-ray photoelectron spectroscopy analyses of oxide-masked organic polymersetched in high density plasmas using SO2/O-2 gas mixtures, J VAC SCI B, 17(4), 1999, pp. 1406-1412
Authors:
Czuprynski, P
Joubert, O
Vallier, L
Sadeghi, N
Citation: P. Czuprynski et al., Operating high-density plasma sources in a low-density range: Applicationsto metal etch processes, J VAC SCI A, 17(5), 1999, pp. 2572-2580
Authors:
Desvoivres, L
Bonvalot, M
Vallier, L
Joubert, O
Citation: L. Desvoivres et al., Study of thin gate of oxide etching during plasma patterning of 0.1 mu m Si gates, MICROEL ENG, 46(1-4), 1999, pp. 295-298
Authors:
Monget, C
Fuard, D
Joubert, O
Panabiere, JP
Citation: C. Monget et al., Optimization of plasma polymerized methylsilane process for 248 and 193 nmlithography applications., MICROEL ENG, 46(1-4), 1999, pp. 349-352
Authors:
Vallier, L
Desvoivres, L
Bonvalot, M
Joubert, O
Citation: L. Vallier et al., Thin gate oxide behavior during plasma patterning of silicon gates, APPL PHYS L, 75(8), 1999, pp. 1069-1070
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