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Results: 1-11 |
Results: 11
Limitations to beam quality of mid-infrared angled-grating distributed-feedback lasers
Authors: Bewley, WW Vurgaftman, I Bartolo, RE Jurkovic, MJ Felix, CL Meyer, JR Lee, H Martinelli, RU Turner, GW Manfra, MJ
Citation: Ww. Bewley et al., Limitations to beam quality of mid-infrared angled-grating distributed-feedback lasers, IEEE S T QU, 7(2), 2001, pp. 96-101
HgCdTe photodetectors with negative luminescent efficiencies > 80%
Authors: Bewley, WW Jurkovic, MJ Felix, CL Lindle, JR Vurgaftman, I Meyer, JR Aifer, EH Butler, JE Tobin, SP Norton, PW Hutchins, MA
Citation: Ww. Bewley et al., HgCdTe photodetectors with negative luminescent efficiencies > 80%, APPL PHYS L, 78(20), 2001, pp. 3082-3084
High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer
Authors: Jurkovic, MJ Li, LK Turk, B Wang, WI Syed, S Simonian, D Stormer, HL
Citation: Mj. Jurkovic et al., High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer, MRS I J N S, 5, 2000, pp. NIL_394-NIL_400
High performance 1.3 mu m InGaAsN : Sb/GaAs quantum well lasers grown by molecular beam epitaxy
Authors: Yang, X Heroux, JB Jurkovic, MJ Wang, WI
Citation: X. Yang et al., High performance 1.3 mu m InGaAsN : Sb/GaAs quantum well lasers grown by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1484-1487
Low-threshold 1.3-mu m InGaAsN : Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy
Authors: Yang, X Heroux, JB Jurkovic, MJ Wang, WI
Citation: X. Yang et al., Low-threshold 1.3-mu m InGaAsN : Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy, IEEE PHOTON, 12(2), 2000, pp. 128-130
Far-field characteristics of mid-infrared angled-grating distributed feedback lasers
Authors: Vurgaftman, I Bewley, WW Bartolo, RE Felix, CL Jurkovic, MJ Meyer, JR Yang, MJ Lee, H Martinelli, RU
Citation: I. Vurgaftman et al., Far-field characteristics of mid-infrared angled-grating distributed feedback lasers, J APPL PHYS, 88(12), 2000, pp. 6997-7005
High-temperature characteristics of 1.3 mu m InGaAsN : Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy
Authors: Yang, X Heroux, JB Jurkovic, MJ Wang, WI
Citation: X. Yang et al., High-temperature characteristics of 1.3 mu m InGaAsN : Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy, APPL PHYS L, 76(7), 2000, pp. 795-797
Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy
Authors: Li, LK Jurkovic, MJ Wang, WI Van Hove, JM Chow, PP
Citation: Lk. Li et al., Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy, APPL PHYS L, 76(13), 2000, pp. 1740-1742
Photoluminescence of as-grown and thermally annealed InGaAsN GaAs quantum wells grown by molecular beam epitaxy
Authors: Yang, X Heroux, JB Jurkovic, MJ Wang, WI
Citation: X. Yang et al., Photoluminescence of as-grown and thermally annealed InGaAsN GaAs quantum wells grown by molecular beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1144-1146
Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant
Authors: Yang, X Jurkovic, MJ Heroux, JB Wang, WI
Citation: X. Yang et al., Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant, ELECTR LETT, 35(13), 1999, pp. 1082-1083
Molecular beam epitaxial growth of InGaAsN : Sb/GaAs quantum wells for long-wavelength semiconductor lasers
Authors: Yang, X Jurkovic, MJ Heroux, JB Wang, WI
Citation: X. Yang et al., Molecular beam epitaxial growth of InGaAsN : Sb/GaAs quantum wells for long-wavelength semiconductor lasers, APPL PHYS L, 75(2), 1999, pp. 178-180
Risultati: 1-11 |