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Results: 1-11 |
Results: 11
THE RESIDUAL ELECTRICALLY ACTIVE DAMAGE IN LOW-ENERGY BORON-IMPLANTEDSILICON - RAPID THERMAL ANNEALING AND IMPLANT MASS EFFECTS
Authors: KAABI L BENBRAHIM J REMAKI B GONTRAND C ELOMARI H BUREAU JC SASSI Z BALLAND B
Citation: L. Kaabi et al., THE RESIDUAL ELECTRICALLY ACTIVE DAMAGE IN LOW-ENERGY BORON-IMPLANTEDSILICON - RAPID THERMAL ANNEALING AND IMPLANT MASS EFFECTS, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 3(1), 1998, pp. 49-52
RTA PROCESSING OF IONIC BORON-IMPLANTED IN SILICON THROUGH SCREEN OXIDE-FILMS - EFFECTS OF SOME TECHNOLOGICAL PARAMETERS
Authors: KAABI L GONTRAND C BUREAU JC SASSI Z BENBRAHIM J BALLAND B
Citation: L. Kaabi et al., RTA PROCESSING OF IONIC BORON-IMPLANTED IN SILICON THROUGH SCREEN OXIDE-FILMS - EFFECTS OF SOME TECHNOLOGICAL PARAMETERS, Annales de chimie, 23(1-2), 1998, pp. 359-364
A MACROMODEL IN SMART SPICE TO STUDY MOSFET DEGRADATIONS WITH THE CP TECHNIQUE
Authors: DJAHLI F KAABI L
Citation: F. Djahli et L. Kaabi, A MACROMODEL IN SMART SPICE TO STUDY MOSFET DEGRADATIONS WITH THE CP TECHNIQUE, Microelectronics, 29(11), 1998, pp. 805-811
IONIC IMPLANTATION AT LOW-ENERGY - APPLICATION TO THE SHALLOW JUNCTION ACCOMPLISHMENT AND SURFACE FUNCTIONALIZATION
Authors: KAABI L GONTRAND C PINARD P BALLAND B REMAKI B GAMOUDI M GUILLAUD G
Citation: L. Kaabi et al., IONIC IMPLANTATION AT LOW-ENERGY - APPLICATION TO THE SHALLOW JUNCTION ACCOMPLISHMENT AND SURFACE FUNCTIONALIZATION, Synthetic metals, 90(3), 1997, pp. 217-221
A MACRO MODEL IN SMART SPICE TO STUDY THE MOSFET DEGRADATIONS WITH CPTECHNIQUE
Authors: DJAHLI F KAABI L
Citation: F. Djahli et L. Kaabi, A MACRO MODEL IN SMART SPICE TO STUDY THE MOSFET DEGRADATIONS WITH CPTECHNIQUE, International journal of electronics, 82(5), 1997, pp. 471-481
INVESTIGATION OF BF2-FILMS - REDISTRIBUTION OF FLUORINE AND BORON UNDER RAPID THERMAL ANNEALING( IMPLANTS IN SILICON THROUGH SIO2)
Authors: KAABI L GONTRAND C LEMITI M REMAKI B BALLAND B MEDDEB J MARTY O
Citation: L. Kaabi et al., INVESTIGATION OF BF2-FILMS - REDISTRIBUTION OF FLUORINE AND BORON UNDER RAPID THERMAL ANNEALING( IMPLANTS IN SILICON THROUGH SIO2), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 68-73
THE EFFECT OF RAPID THERMAL TREATMENTS ON THE FORMATION OF SHALLOW JUNCTIONS BY IMPLANTING BORON AND BF2+ IONS INTO (100)SILICON THROUGH A PROTECTING MASK
Authors: KAABI L REMAKI B GONTRAND C LO PF BALLAND B
Citation: L. Kaabi et al., THE EFFECT OF RAPID THERMAL TREATMENTS ON THE FORMATION OF SHALLOW JUNCTIONS BY IMPLANTING BORON AND BF2+ IONS INTO (100)SILICON THROUGH A PROTECTING MASK, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 196-200
A NEW MODEL FOR CODIFFUSION IN POLYCRYSTALLINE SILICON SPECIFIED TO BICMOS TECHNOLOGY
Authors: GONTRAND C HADDAB Y KAABI L MERABET A
Citation: C. Gontrand et al., A NEW MODEL FOR CODIFFUSION IN POLYCRYSTALLINE SILICON SPECIFIED TO BICMOS TECHNOLOGY, Semiconductor science and technology, 10(10), 1995, pp. 1393-1403
ANALYSIS OF LOW-ENERGY BORON IMPLANTS IN SILICON THROUGH SIO2-FILMS -IMPLANTATION DAMAGE AND ANOMALOUS DIFFUSION
Authors: KAABI L GONTRAND C REMAKI B SEIGNEUR F BALLAND B
Citation: L. Kaabi et al., ANALYSIS OF LOW-ENERGY BORON IMPLANTS IN SILICON THROUGH SIO2-FILMS -IMPLANTATION DAMAGE AND ANOMALOUS DIFFUSION, Microelectronics, 25(7), 1994, pp. 567-576
FEATURE-EXTRACTION IN CARPAL-BONE ANALYSIS
Authors: PIETKA E KAABI L KUO ML HUANG HK
Citation: E. Pietka et al., FEATURE-EXTRACTION IN CARPAL-BONE ANALYSIS, IEEE transactions on medical imaging, 12(1), 1993, pp. 44-49
IMPLANTATION DAMAGE AND ANOMALOUS DIFFUSION OF IMPLANTED BORON IN SILICON THROUGH SIO2-FILMS
Authors: KAABI L GONTRAND C LEMITI M BALLAND B
Citation: L. Kaabi et al., IMPLANTATION DAMAGE AND ANOMALOUS DIFFUSION OF IMPLANTED BORON IN SILICON THROUGH SIO2-FILMS, Physica status solidi. a, Applied research, 138(1), 1993, pp. 99-109
Risultati: 1-11 |