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Results: 1-13 |
Results: 13
SHORT-WAVELENGTH PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH HIGH-DOSES OF SI+, GE+, AND AR+ IONS
Authors: KACHURIN GA TYSCHENKO IE REBOHLE L SKORUPA W YANKOV RA FROEB H BOEHME T LEO K
Citation: Ga. Kachurin et al., SHORT-WAVELENGTH PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH HIGH-DOSES OF SI+, GE+, AND AR+ IONS, Semiconductors, 32(4), 1998, pp. 392-396
PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH SI+ IONS AND ANNEALEDIN A PULSED REGIME
Authors: KACHURIN GA TYSCHENKO IE ZHURAVLEV KS PAZDNIKOV NA VOLODIN VA GUTAKOVSKII AK LEIER AF SKORUPA W YANKOV RA
Citation: Ga. Kachurin et al., PHOTOLUMINESCENCE OF SIO2 LAYERS IMPLANTED WITH SI+ IONS AND ANNEALEDIN A PULSED REGIME, Semiconductors, 31(6), 1997, pp. 626-630
ANNEALING EFFECTS IN LIGHT-EMITTING SI NANOSTRUCTURES FORMED IN SIO2 BY ION-IMPLANTATION AND TRANSIENT PREHEATING
Authors: KACHURIN GA ZHURAVLEV KS PAZDNIKOV NA LEIER AF TYSCHENKO IE VOLODIN VA SKORUPA W YANKOV RA
Citation: Ga. Kachurin et al., ANNEALING EFFECTS IN LIGHT-EMITTING SI NANOSTRUCTURES FORMED IN SIO2 BY ION-IMPLANTATION AND TRANSIENT PREHEATING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 583-586
VISIBLE AND NEAR-INFRARED LUMINESCENCE FROM SILICON NANOSTRUCTURES FORMED BY ION-IMPLANTATION AND PULSE ANNEALING
Authors: KACHURIN GA TYSCHENKO IE ZHURAVLEV KS PAZDNIKOV NA VOLODIN VA GUTAKOVSKY AK LEIER AF SKORUPA W YANKOV RA
Citation: Ga. Kachurin et al., VISIBLE AND NEAR-INFRARED LUMINESCENCE FROM SILICON NANOSTRUCTURES FORMED BY ION-IMPLANTATION AND PULSE ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(3), 1997, pp. 571-574
BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS()
Authors: REBOHLE L TYSCHENKO IE FROB H LEO K YANKOV RA VONBORANY J KACHURIN GA SKORUPA W
Citation: L. Rebohle et al., BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS(), Microelectronic engineering, 36(1-4), 1997, pp. 107-110
EFFECT OF COMPETING TRAPPING CENTERS (SINKS) ON THE EVOLUTION OF IMPLANTED-NITROGEN DISTRIBUTION IN SILICON - A NUMERICAL-SIMULATION
Authors: GADIYAK GV KACHURIN GA TYSCHENKO IE
Citation: Gv. Gadiyak et al., EFFECT OF COMPETING TRAPPING CENTERS (SINKS) ON THE EVOLUTION OF IMPLANTED-NITROGEN DISTRIBUTION IN SILICON - A NUMERICAL-SIMULATION, Semiconductors, 30(11), 1996, pp. 1019-1023
FORMATION OF ELECTRICALLY ACTIVE-CENTERS BEYOND THE STOPPING RANGES OF IONS IMPLANTED IN HEATED SILICON
Authors: ANTONOVA IV KACHURIN GA TYSCHENKO IE SHAIMEEV SS
Citation: Iv. Antonova et al., FORMATION OF ELECTRICALLY ACTIVE-CENTERS BEYOND THE STOPPING RANGES OF IONS IMPLANTED IN HEATED SILICON, Semiconductors, 30(11), 1996, pp. 1051-1054
A STUDY OF THE BLUE PHOTOLUMINESCENCE EMISSION FROM THERMALLY-GROWN, SI-IMPLANTED SIO2-FILMS AFTER SHORT-TIME ANNEALING()
Authors: SKORUPA W YANKOV RA REBOHLE L FROB H BOHME T LEO K TYSCHENKO IE KACHURIN GA
Citation: W. Skorupa et al., A STUDY OF THE BLUE PHOTOLUMINESCENCE EMISSION FROM THERMALLY-GROWN, SI-IMPLANTED SIO2-FILMS AFTER SHORT-TIME ANNEALING(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 106-109
EFFECT OF COMPETING PRECIPITATION CENTERS ON THE DISTRIBUTION OF NITROGEN-IMPLANTED IN SI DURING THE FORMATION OF BURIED LAYERS
Authors: KACHURIN GA TYSCHENKO IE TIIS SA PLOTNIKOV AE
Citation: Ga. Kachurin et al., EFFECT OF COMPETING PRECIPITATION CENTERS ON THE DISTRIBUTION OF NITROGEN-IMPLANTED IN SI DURING THE FORMATION OF BURIED LAYERS, Semiconductors, 29(3), 1995, pp. 256-258
NEUTRALIZATION OF BORON IN SILICON BY HIGH-TEMPERATURE BOMBARDMENT WITH ARGON IONS
Authors: KACHURIN GA OBODNIKOV VI PRINTS VY TYSCHENKO IE
Citation: Ga. Kachurin et al., NEUTRALIZATION OF BORON IN SILICON BY HIGH-TEMPERATURE BOMBARDMENT WITH ARGON IONS, Semiconductors, 28(3), 1994, pp. 313-316
ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF SI DUE TO DIFFUSION OF POINT-DEFECTS FROM CRYSTALLINE AND AMORPHOUS REGIONS TO THE INTERPHASEBOUNDARY
Authors: STEPINA NP KACHURIN GA POPOV VP ROMANOV SI
Citation: Np. Stepina et al., ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF SI DUE TO DIFFUSION OF POINT-DEFECTS FROM CRYSTALLINE AND AMORPHOUS REGIONS TO THE INTERPHASEBOUNDARY, Physica status solidi. a, Applied research, 141(2), 1994, pp. 305-310
BEHAVIOR OF BORON AND NITROGEN IN A SURFACE-LAYER OF SILICON DURING SYNTHESIS OF BURIED LAYERS BY IMPLANTATION OF N+ IONS
Authors: KACHURIN GA TYSCHENKO IE
Citation: Ga. Kachurin et Ie. Tyschenko, BEHAVIOR OF BORON AND NITROGEN IN A SURFACE-LAYER OF SILICON DURING SYNTHESIS OF BURIED LAYERS BY IMPLANTATION OF N+ IONS, Semiconductors, 27(7), 1993, pp. 658-662
ROLES OF IMPLANTATION TEMPERATURE AND ION DOSE-RATE IN ION-BEAM SYNTHESIS OF BURIED SI3N4 LAYERS
Authors: KACHURIN GA AKHMETOV VD TYSCHENKO IE PLOTNIKOV AE
Citation: Ga. Kachurin et al., ROLES OF IMPLANTATION TEMPERATURE AND ION DOSE-RATE IN ION-BEAM SYNTHESIS OF BURIED SI3N4 LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 74(3), 1993, pp. 399-404
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