AAAAAA
Results: 1-25/26
Authors:
CHIANG CS
KANICKI J
TAKECHI K
Citation: Cs. Chiang et al., ELECTRICAL INSTABILITY OF HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS FOR ACTIVE-MATRIX LIQUID-CRYSTAL DISPLAYS, JPN J A P 1, 37(9A), 1998, pp. 4704-4710
Authors:
POLITIS JK
CURTIS MD
GONZALEZ L
MARTIN DC
HE Y
KANICKI J
Citation: Jk. Politis et al., SYNTHESIS AND CHARACTERIZATION OF CONJUGATED, N-DOPABLE, BITHIAZOLE-CONTAINING POLYMERS, Chemistry of materials, 10(6), 1998, pp. 1713-1719
Authors:
CHIANO CS
CHEN CY
KANICKI J
Citation: Cs. Chiano et al., SCHOTTKY-CONTACT GATED-4-PROBE ALPHA-SI-H TFT STRUCTURE - A NEW STRUCTURE TO INVESTIGATE THE ELECTRICAL INSTABILITY OF ALPHA-SI-H TFT, IEEE electron device letters, 19(10), 1998, pp. 382-384
Authors:
CHEN CY
KANICKI J
Citation: Cy. Chen et J. Kanicki, ORIGIN OF SERIES RESISTANCES IN A-SI-H TFTS, Solid-state electronics, 42(5), 1998, pp. 705-713
Authors:
FLYNN MJ
BADANO A
KANICKI J
Citation: Mj. Flynn et al., CONTRAST REDUCTION FROM AMBIENT LIGHT FOR FILM, CRT, AND AM-LCD DISPLAY DEVICES, Radiology, 209P, 1998, pp. 601-601
Authors:
CHIANG C
CHEN C
KANICKI J
TAKECHI K
Citation: C. Chiang et al., INVESTIGATION OF INTRINSIC CHANNEL CHARACTERISTICS OF HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS BY GATED-4-PROBE STRUCTURE, Applied physics letters, 72(22), 1998, pp. 2874-2876
Authors:
CHEN CY
KANICKI J
Citation: Cy. Chen et J. Kanicki, GATED-4-PROBE A-SI-H TFT STRUCTURE - A NEW TECHNIQUE TO MEASURE THE INTRINSIC PERFORMANCE OF A-SI-H TFT, IEEE electron device letters, 18(7), 1997, pp. 340-342
Authors:
LAN JH
KANICKI J
Citation: Jh. Lan et J. Kanicki, ITO SURFACE BALL FORMATION INDUCED BY ATOMIC-HYDROGEN IN PECVD AND HW-CVD TOOLS, Thin solid films, 304(1-2), 1997, pp. 123-129
Authors:
HE Y
POLITIS JK
CHENG HT
CURTIS MD
KANICKI J
Citation: Y. He et al., CHARACTERIZATION AND STABILITY OF LIGHT-EMITTING-DIODES BASED ON POLY(BITHIAZOLE)S, I.E.E.E. transactions on electron devices, 44(8), 1997, pp. 1282-1288
Authors:
WARREN WL
KANICKI J
POINDEXTER EH
Citation: Wl. Warren et al., PARAMAGNETIC POINT-DEFECTS IN SILICON-NITRIDE AND SILICON OXYNITRIDE THIN-FILMS ON SILICON, Colloids and surfaces. A, Physicochemical and engineering aspects, 115, 1996, pp. 311-317
Authors:
CHEN CY
KANICKI J
Citation: Cy. Chen et J. Kanicki, HIGH FIELD-EFFECT-MOBILITY A-SI-H TFT BASED ON HIGH DEPOSITION-RATE PECVD MATERIALS, IEEE electron device letters, 17(9), 1996, pp. 437-439
Authors:
LAN JH
KANICKI J
CATALANO A
KEANE J
DENBOER W
GU T
Citation: Jh. Lan et al., PATTERNING OF TRANSPARENT CONDUCTING OXIDE THIN-FILMS BY WET ETCHING FOR A-SI-H TFT-LCDS, Journal of electronic materials, 25(12), 1996, pp. 1806-1817
Authors:
ZELIKSON M
WEISER K
CHACK A
KANICKI J
Citation: M. Zelikson et al., DIRECT DETERMINATION OF THE QUADRATIC ELECTROOPTIC COEFFICIENT IN AN A-SI-H BASED WAVE-GUIDE, Journal of non-crystalline solids, 200, 1996, pp. 107-110
Authors:
ZELIKSON M
WEISER K
KANICKI J
Citation: M. Zelikson et al., STUDY OF SUB-BANDGAP PHOTOINDUCED ABSORPTION IN A-SI-H USING EXCITATION SPECTROSCOPY IN A WAVE-GUIDE CONFIGURATION, Journal of non-crystalline solids, 200, 1996, pp. 259-262
Authors:
LU J
DESHPANDE SV
GULARI E
KANICKI J
WARREN WL
Citation: J. Lu et al., ULTRAVIOLET-LIGHT INDUCED CHANGES IN POLYIMIDE LIQUID-CRYSTAL ALIGNMENT FILMS, Journal of applied physics, 80(9), 1996, pp. 5028-5034
Authors:
WARREN WL
SEAGER CH
ROBERTSON J
KANICKI J
POINDEXTER EH
Citation: Wl. Warren et al., CREATION AND PROPERTIES OF NITROGEN DANGLING BOND DEFECTS IN SILICON-NITRIDE THIN-FILMS, Journal of the Electrochemical Society, 143(11), 1996, pp. 3685-3691
Authors:
YU S
GULARI E
KANICKI J
Citation: S. Yu et al., SELECTIVE DEPOSITION OF POLYCRYSTALLINE SILICON THIN-FILMS AT LOW-TEMPERATURE BY HOT-WIRE CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 68(19), 1996, pp. 2681-2683
Authors:
DEVINE RAB
WARREN WL
KANICKI J
MATSUMARA M
Citation: Rab. Devine et al., PROCEEDINGS OF E-MRS SPRING MEETING, SYMPOSIUM A - AMORPHOUS INSULATING THIN-FILMS STRASBOURG, FRANCE 24-27 MAY 1994 - PREFACE, Journal of non-crystalline solids, 187, 1995, pp. 7-7
Authors:
ROBERTSON J
WARREN WL
KANICKI J
Citation: J. Robertson et al., NATURE OF THE SI AND N DANGLING BONDS IN SILICON-NITRIDE, Journal of non-crystalline solids, 187, 1995, pp. 297-300
Authors:
CHEN D
VINER JM
TAYLOR PC
KANICKI J
Citation: D. Chen et al., PHOTOLUMINESCENCE AND ELECTRON-SPIN-RESONANCE IN NITROGEN-RICH AMORPHOUS-SILICON NITRIDE, Journal of non-crystalline solids, 182(1-2), 1995, pp. 103-108
Authors:
WARREN WL
SEAGER CH
KANICKI J
CROWDER MS
SIGARI E
Citation: Wl. Warren et al., ULTRAVIOLET-LIGHT INDUCED ANNIHILATION OF SILICON DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON NITRIDE FILMS, Journal of applied physics, 77(11), 1995, pp. 5730-5735
Authors:
CHEN D
VINER JM
TAYLOR PC
KANICKI J
Citation: D. Chen et al., TEMPERATURE-DEPENDENCE OF THE ELECTRON-SPIN-RESONANCE IN NITROGEN-RICH AMORPHOUS-SILICON NITRIDE, Physical review. B, Condensed matter, 49(19), 1994, pp. 13420-13422
Authors:
GODET C
KANICKI J
Citation: C. Godet et J. Kanicki, PHOTOCREATION AND PHOTOBLEACHING OF A-SIN1.6H C-SI INTERFACE STATES STUDIED BY PHOTOCAPACITANCE TRANSIENT SPECTROSCOPY/, Physica. B, Condensed matter, 185(1-4), 1993, pp. 542-545
Authors:
KANICKI J
WARREN WL
Citation: J. Kanicki et Wl. Warren, DEFECTS IN AMORPHOUS HYDROGENATED SILICON-NITRIDE FILMS, Journal of non-crystalline solids, 166, 1993, pp. 1055-1060
Authors:
WARREN WL
KANICKI J
ROBERTSON J
POINDEXTER EH
MCWHORTER PJ
Citation: Wl. Warren et al., ELECTRON-PARAMAGNETIC-RESONANCE INVESTIGATION OF CHARGE TRAPPING CENTERS IN AMORPHOUS-SILICON NITRIDE FILMS, Journal of applied physics, 74(6), 1993, pp. 4034-4046