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Results: 1-25/64
Authors:
LISTER J
PACKARD R
KANSKI J
Citation: J. Lister et al., GLOVER,ERIC,CHARLES,(BUSTER) - OBITUARY, BMJ. British medical journal, 317(7162), 1998, pp. 890-890
Authors:
SADOWSKI J
DOMAGALA J
BAKMISIUK J
SWIATEK K
KANSKI J
ILVER L
OSCARSSON H
Citation: J. Sadowski et al., MBE GROWTH AND PROPERTIES OF GAMNAS(100) FILMS, Acta Physica Polonica. A, 94(3), 1998, pp. 509-513
Authors:
WIGREN C
ILVER L
KANSKI J
NILSSON PO
KARLSSON UO
Citation: C. Wigren et al., PHOTOEMISSION-STUDY OF QUANTUM-WELL STATES IN THIN ERAS FILMS ON GAAS(100), Surface review and letters, 5(1), 1998, pp. 299-303
Authors:
ILVER L
KANSKI J
NILSSON PO
OSCARSSON H
DAVILA M
KARLSSON UO
Citation: L. Ilver et al., INTERACTION BETWEEN AS AND INP(110) STUDIED BY HIGH-RESOLUTION CORE-LEVEL PHOTOEMISSION, Applied surface science, 123, 1998, pp. 95-99
Authors:
MANKEFORS S
NILSSON PO
KANSKI J
KARLSSON K
Citation: S. Mankefors et al., AB-INITIO CALCULATIONS OF SOFT-X-RAY EMISSION FROM SI(100) LAYERS BURIED IN GAAS, Physical review. B, Condensed matter, 58(16), 1998, pp. 10551-10556
Authors:
MANKEFORS S
NILSSON PO
KANSKI J
KARLSSON K
Citation: S. Mankefors et al., THEORETICAL INVESTIGATION OF SOFT-X-RAY EMISSION FROM A SI(100) LAYERBURIED IN GAAS, Vacuum, 49(3), 1998, pp. 181-184
Authors:
PETO G
MOLNAR GL
HORVATH ZE
ZSOLDOS E
KHANH NQ
GYULAI J
KANSKI J
Citation: G. Peto et al., FORMATION OF EPITAXIAL HOSI2 LAYER ON SI(100), Thin solid films, 318(1-2), 1998, pp. 168-171
Authors:
OLSSON LO
BJORKQVIST M
ILVER L
KARLSSON UO
KANSKI J
Citation: Lo. Olsson et al., INSB(211) STUDIED BY PHOTOELECTRON-SPECTROSCOPY AND SCANNING-TUNNELING-MICROSCOPY, Surface science, 395(1), 1998, pp. 111-119
Authors:
KANSKI J
Citation: J. Kanski, LULLY 'ALCESTE', Opera, 49(5), 1998, pp. 580-581
Authors:
KANSKI J
Citation: J. Kanski, VERDI 'SIMON BOCCANEGRA', Opera, 49(5), 1998, pp. 580-580
Authors:
GRAY T
KANSKI J
LIGHTMAN S
Citation: T. Gray et al., STEROID-RESPONSIVE DISC NEOVASCULARIZATION IN UVEITIS ASSOCIATED WITHJUVENILE CHRONIC ARTHRITIS, British journal of ophthalmology, 82(3), 1998, pp. 327-328
Authors:
HE ZQ
KHAZMI YO
KANSKI J
ILVER L
NILSSON PO
KARLSSON UO
Citation: Zq. He et al., CORE-LEVEL PHOTOEMISSION-STUDY OF AS INTERACTION WITH INP(110) AND GAAS(110), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 1515-1519
Authors:
KOWALSKI BJ
SZUSZKIEWICZ W
ORLOWSKI BA
HE ZQ
ILVER L
KANSKI J
NILSSON PO
Citation: Bj. Kowalski et al., PHOTOEMISSION-STUDY OF BETA-HGS, Journal of electron spectroscopy and related phenomena, 85(1-2), 1997, pp. 17-22
Authors:
MANKEFORS S
NILSSON PO
KANSKI J
KARLSSON K
Citation: S. Mankefors et al., THEORETICAL INVESTIGATIONS OF AS OVERLAYERS ON INP(110) SURFACES, Physical review. B, Condensed matter, 56(24), 1997, pp. 15847-15852
Authors:
HE ZQ
ILVER L
KANSKI J
NILSSON PO
KARLSSON UO
Citation: Zq. He et al., OBSERVATION OF GA SEGREGATION IN THE GROWTH OF INAS OVERLAYERS ON GAAS(110) USING CORE-LEVEL PHOTOELECTRON-SPECTROSCOPY, Physical review. B, Condensed matter, 55(15), 1997, pp. 9716-9721
Authors:
HAKANSSON MC
JOHANSSON LSO
ANDERSSON CBM
KARLSSON UO
OLSSON LO
KANSKI J
ILVER L
NILSSON PO
Citation: Mc. Hakansson et al., THE ELECTRONIC-STRUCTURE OF IN-TERMINATED AND AS-TERMINATED INAS(001)SURFACES, Surface science, 374(1-3), 1997, pp. 73-79
Authors:
KANSKI J
Citation: J. Kanski, PONCHIELLI I 'LITUANI', Opera, 48(3), 1997, pp. 339-340
Authors:
KANSKI J
Citation: J. Kanski, MATUSZCZAK 'QUO VADIS', Opera, 48(3), 1997, pp. 340-340
Authors:
BJORKQVIST M
GOTHELID M
OLSSON LO
KANSKI J
KARLSSON UO
Citation: M. Bjorkqvist et al., INSB((111)OVER-BAR)3X1 - NEW SURFACE RECONSTRUCTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 957-960
Authors:
SIMPSON WC
SHUH DK
HUNG WH
HAKANSSON MC
KANSKI J
KARLSSON UO
YARMOFF JA
Citation: Wc. Simpson et al., ROLE OF SURFACE STOICHIOMETRY IN THE CL-2 GAAS(001) REACTION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1815-1821
Authors:
HE ZQ
ILVER L
KANSKI J
NILSSON PO
SONGSIRIRITTHIGUL P
HOLMEN G
KARLSSON UO
Citation: Zq. He et al., BAND-STRUCTURE EVOLUTION IN INAS OVERLAYERS ON GAAS(110), Applied surface science, 104, 1996, pp. 608-614
Authors:
PETO G
KANSKI J
Citation: G. Peto et J. Kanski, THERMAL REGROWTH OF SI(100) DAMAGED BY NE, AR, AND XE ION-BOMBARDMENT, Applied surface science, 103(4), 1996, pp. 459-463
Authors:
PETO G
SCHILLER V
KHANH NQ
GYULAI J
KANSKI J
Citation: G. Peto et al., SURFACE REGROWTH OF SB ION-IMPLANTED SI(100), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 226-229
Authors:
ANDERSSON CBM
KARLSSON UO
HAKANSSON MC
OLSSON LO
ILVER L
NILSSON PO
KANSKI J
PERSSON PES
Citation: Cbm. Andersson et al., ELECTRONIC-STRUCTURE OF INAS((1)OVER-BAR-(1)OVER-BAR-(1)OVER-BAR)2X2 AND INSB((1)OVER-BAR-(1)OVER-BAR-(1)OVER-BAR)2X2 STUDIED BY ANGLE-RESOLVED PHOTOELECTRON-SPECTROSCOPY, Physical review. B, Condensed matter, 54(3), 1996, pp. 1833-1840
Authors:
VAREKAMP PR
HAKANSSON MC
KANSKI J
SHUH DK
BJORKQVIST M
GOTHELID M
SIMPSON WC
KARLSSON UO
YARMOFF JA
Citation: Pr. Varekamp et al., REACTION OF I-2 WITH THE (001) SURFACES OF GAAS, INAS, AND INSB .1. CHEMICAL INTERACTION WITH THE SUBSTRATE, Physical review. B, Condensed matter, 54(3), 1996, pp. 2101-2113