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Results: 1-13 |
Results: 13
FORMATION AND PASSIVATION OF DEFECTS IN HETEROSTRUCTURES WITH STRAINED GAAS INGAAS QUANTUM-WELLS AS A RESULT OF TREATMENT IN A HYDROGEN PLASMA/
Authors: KARPOVICH IA ANSHON AV FILATOV DO
Citation: Ia. Karpovich et al., FORMATION AND PASSIVATION OF DEFECTS IN HETEROSTRUCTURES WITH STRAINED GAAS INGAAS QUANTUM-WELLS AS A RESULT OF TREATMENT IN A HYDROGEN PLASMA/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 975-979
EFFECT OF HETEROEPITAXIAL SURFACE PASSIVATION ON THE PHOTOSENSITIVITYSPECTRA AND RECOMBINATION PARAMETERS OF GAAS-LAYERS
Authors: KARPOVICH IA STEPIKHOVA MV
Citation: Ia. Karpovich et Mv. Stepikhova, EFFECT OF HETEROEPITAXIAL SURFACE PASSIVATION ON THE PHOTOSENSITIVITYSPECTRA AND RECOMBINATION PARAMETERS OF GAAS-LAYERS, Semiconductors, 32(2), 1998, pp. 164-168
PHOTOELECTRIC PROPERTIES OF GAAS INAS HETEROSTRUCTURES WITH QUANTUM DOTS/
Authors: ZVONKOV BN MALKINA IG LINKOVA ER ALESHKIN VY KARPOVICH IA FILATOV DO
Citation: Bn. Zvonkov et al., PHOTOELECTRIC PROPERTIES OF GAAS INAS HETEROSTRUCTURES WITH QUANTUM DOTS/, Semiconductors, 31(9), 1997, pp. 941-946
THE ORIGIN OF DOMINATING ESR ABSORPTION IN ION-IMPLANTED DIAMOND
Authors: ERTCHAK DP EFIMOV VG STELMAKH VF MARTINOVICH VA ALEXANDROV AF GUSEVA MB PENINA NM VARICHENKO VS KARPOVICH IA ZAITSEV AM FAHRNER WR FINK D
Citation: Dp. Ertchak et al., THE ORIGIN OF DOMINATING ESR ABSORPTION IN ION-IMPLANTED DIAMOND, Physica status solidi. b, Basic research, 203(2), 1997, pp. 529-547
ION-BEAM EFFECTS IN POLYMER-FILMS - STRUCTURE EVOLUTION OF THE IMPLANTED LAYER
Authors: POPOK VN ODZHAEV VB KOZLOV IP AZARKO II KARPOVICH IA SVIRIDOV DV
Citation: Vn. Popok et al., ION-BEAM EFFECTS IN POLYMER-FILMS - STRUCTURE EVOLUTION OF THE IMPLANTED LAYER, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 129(1), 1997, pp. 60-64
DIAGNOSTICS OF HETEROSTRUCTURES WITH QUANTUM-WELLS BY THE METHOD OF CAPACITIVE PHOTOVOLTAGE SPECTROSCOPY
Authors: KARPOVICH IA FILATOV DO
Citation: Ia. Karpovich et Do. Filatov, DIAGNOSTICS OF HETEROSTRUCTURES WITH QUANTUM-WELLS BY THE METHOD OF CAPACITIVE PHOTOVOLTAGE SPECTROSCOPY, Semiconductors, 30(10), 1996, pp. 913-917
PHOTOCONDUCTIVITY, PHOTOMAGNETIC, AND MAGNETORESISTIVE EFFECTS IN SEMIINSULATING GAAS - DETERMINATION OF RECOMBINATION PARAMETERS
Authors: KARPOVICH IA STEPIKHOVA MV
Citation: Ia. Karpovich et Mv. Stepikhova, PHOTOCONDUCTIVITY, PHOTOMAGNETIC, AND MAGNETORESISTIVE EFFECTS IN SEMIINSULATING GAAS - DETERMINATION OF RECOMBINATION PARAMETERS, Semiconductors, 30(10), 1996, pp. 934-937
THE PROPERTIES OF POLYETHYLENE AND POLYAMIDE IMPLANTED WITH B-DOSES( IONS TO HIGH)
Authors: ODZHAEV VB AZARKO II KARPOVICH IA KOZLOV IP POPOK VN SVIRIDOV DV HNATOWICZ V JANKOVSKIJ ON RYBKA V SVORCIK V
Citation: Vb. Odzhaev et al., THE PROPERTIES OF POLYETHYLENE AND POLYAMIDE IMPLANTED WITH B-DOSES( IONS TO HIGH), Materials letters, 23(1-3), 1995, pp. 163-166
INFLUENCE OF ION-IMPLANTATION ON THE PROPERTIES OF POLYMER-FILMS
Authors: AZARKO II KARPOVICH IA KOZLOV IP KOZLOVA EI ODZHAEV VB POPOK VN HNATOWICZ V
Citation: Ii. Azarko et al., INFLUENCE OF ION-IMPLANTATION ON THE PROPERTIES OF POLYMER-FILMS, Solid state communications, 95(1), 1995, pp. 49-51
USE OF QUANTUM-WELL STRUCTURES TO STUDY DEFECT FORMATION AT SEMICONDUCTOR SURFACES
Authors: KARPOVICH IA ANSHON AV BAIDUS NV BATUKOVA LM DANILOV YA ZVONKOV BN PLANKINA SM
Citation: Ia. Karpovich et al., USE OF QUANTUM-WELL STRUCTURES TO STUDY DEFECT FORMATION AT SEMICONDUCTOR SURFACES, Semiconductors, 28(1), 1994, pp. 63-67
USE OF QUANTUM-DIMENSIONAL HETEROSTRUCTUR ES FOR STUDYING DEFECT FORMATION DURING ION-IMPLANTATION OF SEMICONDUCTORS
Authors: KARPOVICH IA ANSHON AV BAIDUS NV BATUKOVA LM DANILOV YA ZVONKOV BN
Citation: Ia. Karpovich et al., USE OF QUANTUM-DIMENSIONAL HETEROSTRUCTUR ES FOR STUDYING DEFECT FORMATION DURING ION-IMPLANTATION OF SEMICONDUCTORS, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 58(5), 1994, pp. 213-218
POLARIZATION DEPENDENCE OF THE INTERBAND OPTICAL-ABSORPTION BY AN INGAAS QUANTUM-WELL IN GAAS
Authors: ALESHKIN VY ANSHON AV KARPOVICH IA
Citation: Vy. Aleshkin et al., POLARIZATION DEPENDENCE OF THE INTERBAND OPTICAL-ABSORPTION BY AN INGAAS QUANTUM-WELL IN GAAS, Semiconductors, 27(8), 1993, pp. 742-744
HETEROEPITAXIAL PASSIVATION OF THE SURFACE OF GAAS
Authors: KARPOVICH IA BEDNYI BI BAIDUS NV BATUKOVA LM ZVONKOV BN STEPIKHOVA MV
Citation: Ia. Karpovich et al., HETEROEPITAXIAL PASSIVATION OF THE SURFACE OF GAAS, Semiconductors, 27(10), 1993, pp. 958-961
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