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Results: 1-25/27
Authors:
FELD SA
LOEHR JP
SHERRIFF RE
WIEMERI J
KASPI R
Citation: Sa. Feld et al., IN-SITU OPTICAL MONITORING OF ALAS WET OXIDATION USING A NOVEL LOW-TEMPERATURE LOW-PRESSURE STEAM FURNACE DESIGN, IEEE photonics technology letters, 10(2), 1998, pp. 197-199
Authors:
YUVAL B
KASPI R
SHLOUSH S
WARBURG MS
Citation: B. Yuval et al., NUTRITIONAL RESERVES REGULATE MALE PARTICIPATION IN MEDITERRANEAN FRUIT-FLY LEKS, Ecological entomology, 23(2), 1998, pp. 211-215
Authors:
KUTSCHE C
LIKAMWA P
LOEHR J
KASPI R
Citation: C. Kutsche et al., QUASI-CW SELF-GUIDED OPTICAL BEAMS IN GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE SLAB WAVE-GUIDES, Electronics Letters, 34(9), 1998, pp. 906-907
Authors:
JENNY JR
VANNOSTRAND JE
KASPI R
Citation: Jr. Jenny et al., THE EFFECT OF AL ON GA DESORPTION DURING GAS SOURCE-MOLECULAR BEAM EPITAXIAL-GROWTH OF ALGAN, Applied physics letters, 72(1), 1998, pp. 85-87
HIGH-QUALITY INTERFACES IN GAAS-ALAS QUANTUM-WELLS DETERMINED FROM HIGH-RESOLUTION PHOTOLUMINESCENCE
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
KASPI R
EVANS KR
ESTES M
Citation: Dc. Reynolds et al., HIGH-QUALITY INTERFACES IN GAAS-ALAS QUANTUM-WELLS DETERMINED FROM HIGH-RESOLUTION PHOTOLUMINESCENCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1703-1706
Authors:
LO I
CHIANG JC
TSAY SF
MITCHEL WC
AHOUJJA M
KASPI R
ELHAMRI S
NEWROCK RS
Citation: I. Lo et al., EFFECT OF WELL THICKNESS ON THE 2-DIMENSIONAL ELECTRON-HOLE SYSTEM INALXGA1-XSB INAS QUANTUM-WELLS/, Physical review. B, Condensed matter, 55(20), 1997, pp. 13677-13681
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
KASPI R
EVANS KR
Citation: Dc. Reynolds et al., CRYSTAL-FIELD SPLITTING OF DEFECT PAIR SPECTRA IN GAAS, Solid state communications, 102(1), 1997, pp. 47-51
Authors:
KASPI R
EVANS KR
Citation: R. Kaspi et Kr. Evans, SB-SURFACE SEGREGATION AND THE CONTROL OF COMPOSITIONAL ABRUPTNESS ATTHE GAASSB GAAS INTERFACE/, Journal of crystal growth, 175, 1997, pp. 838-843
Authors:
EVANS KR
EHRET JE
JONES CR
KASPI R
Citation: Kr. Evans et al., SUBSTRATE-TEMPERATURE CHANGE IN III-V MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 1316-1320
Authors:
JENNY JR
KASPI R
EVANS KR
Citation: Jr. Jenny et al., GROWTH-KINETICS OF GAN GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 89-93
Authors:
KASPI R
COOLEY WT
EVANS KR
Citation: R. Kaspi et al., IN-SITU COMPOSITION CONTROL OF III-AS1-XSBX ALLOYS DURING MOLECULAR-BEAM EPITAXY USING LINE-OF-SIGHT MASS-SPECTROMETRY, Journal of crystal growth, 173(1-2), 1997, pp. 5-13
Authors:
CHATTOPADHYAY K
AUBEL J
SUNDARAM S
EHRET JE
KASPI R
EVANS KR
Citation: K. Chattopadhyay et al., ELECTROREFLECTANCE STUDY OF EFFECTS OF INDIUM SEGREGATION IN MOLECULAR-BEAM-EPITAXY-GROWN INGAAS GAAS/, Journal of applied physics, 81(8), 1997, pp. 3601-3606
Authors:
QIAN W
SKOWRONSKI M
KASPI R
DEGRAEF M
DRAVID VP
Citation: W. Qian et al., NUCLEATION OF MISFIT AND THREADING DISLOCATIONS DURING EPITAXIAL-GROWTH OF GASB ON GAAS(001) SUBSTRATES, Journal of applied physics, 81(11), 1997, pp. 7268-7272
Authors:
QIAN W
SKOWRONSKI M
KASPI R
Citation: W. Qian et al., DISLOCATION DENSITY REDUCTION IN GASB FILMS GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of the Electrochemical Society, 144(4), 1997, pp. 1430-1434
Authors:
KASPI R
LOEHR JP
Citation: R. Kaspi et Jp. Loehr, BILAYER GROWTH PERIOD OSCILLATION OF THE SB-2 REACTIVITY DURING MOLECULAR-BEAM EPITAXY OF ALSB(001), Applied physics letters, 71(24), 1997, pp. 3537-3539
Authors:
MERKEL KG
CERNY CLA
BRIGHT VM
SCHUERMEYER FL
MONAHAN TP
LAREAU RT
KASPI R
RAI AK
Citation: Kg. Merkel et al., IMPROVED P-CHANNEL INALAS GAASSB HIGFET USING TI/PT/AU OHMIC CONTACTSTO BERYLLIUM IMPLANTED GAASSB/, Solid-state electronics, 39(2), 1996, pp. 179-191
Authors:
LOOK DC
JOGAI B
KASPI R
EBEL JL
EVANS KR
JONES RL
NAKANO K
SHERRIFF RE
STULZ CE
DESALVO GC
ITO C
Citation: Dc. Look et al., EFFECTS OF IN PROFILE ON MATERIAL AND DEVICE PROPERTIES OF ALGAAS INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of applied physics, 79(1), 1996, pp. 540-544
Authors:
YUVAL B
BLAY S
KASPI R
Citation: B. Yuval et al., SPERM TRANSFER AND STORAGE IN THE MEDITERRANEAN FRUIT-FLY (DIPTERA, TEPHRITIDAE), Annals of the Entomological Society of America, 89(3), 1996, pp. 486-492
Authors:
EVANS KR
KASPI R
EHRET JE
SKOWRONSKI M
JONES CR
Citation: Kr. Evans et al., SURFACE-CHEMISTRY EVOLUTION DURING MOLECULAR-BEAM EPITAXY GROWTH OF INGAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1820-1823
Authors:
KASPI R
BARNETT SA
HULTMAN L
Citation: R. Kaspi et al., GROWTH OF INGAASSB LAYERS IN THE MISCIBILITY GAP - USE OF VERY-LOW-ENERGY ION IRRADIATION TO REDUCE ALLOY DECOMPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 978-987
Authors:
KASPI R
EVANS KR
Citation: R. Kaspi et Kr. Evans, IMPROVED COMPOSITIONAL ABRUPTNESS AT THE INGAAS ON GAAS INTERFACE BY PRESATURATION WITH IN DURING MOLECULAR-BEAM EPITAXY, Applied physics letters, 67(6), 1995, pp. 819-821
Authors:
REYNOLDS DC
LOOK DC
KASPI R
TALWAR DN
Citation: Dc. Reynolds et al., PHONON REPLICAS IN THE PHOTOLUMINESCENCE EMISSION OF ALXGA1-XAS ALLOYS, Applied physics letters, 66(25), 1995, pp. 3447-3449
Authors:
YU PW
STUTZ CE
MANASREH MO
KASPI R
CAPANO MA
Citation: Pw. Yu et al., MOVING PHOTOLUMINESCENCE BANDS IN GAAS1-XSBX LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATES, Journal of applied physics, 76(1), 1994, pp. 504-508
Authors:
DESALVO GC
KASPI R
BOZADA CA
Citation: Gc. Desalvo et al., CITRIC-ACID ETCHING OF GAAS1-XSBX, AL0.5GA0.5SB, AND INAS FOR HETEROSTRUCTURE DEVICE FABRICATION, Journal of the Electrochemical Society, 141(12), 1994, pp. 3526-3531
Authors:
LO I
MITCHEL WC
KASPI R
ELHAMRI S
NEWROCK RS
Citation: I. Lo et al., OBSERVATION OF A NEGATIVE PERSISTENT PHOTOCONDUCTIVITY EFFECT IN IN0.25GA0.75SB INAS QUANTUM-WELLS/, Applied physics letters, 65(8), 1994, pp. 1024-1026