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Results:
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Results: 20
Authors:
SCHWIERZ F
KITTLER M
FORSTER H
SCHIPANSKI D
Citation: F. Schwierz et al., THE POTENTIAL OF SIC AND GAN FOR APPLICATION IN HIGH-SPEED DEVICES, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1512-1514
Authors:
WIEGRABE W
MONAJEMBASHI S
DITTMAR H
GREULICH KO
HAFNER S
HILDEBRANDT M
KITTLER M
LOCHNER B
UNGER E
Citation: W. Wiegrabe et al., SCANNING NEAR-FIELD OPTICAL MICROSCOPE - A METHOD FOR INVESTIGATING CHROMOSOMES, Surface and interface analysis, 25(7-8), 1997, pp. 510
Authors:
KITTLER M
SEIFERT W
Citation: M. Kittler et W. Seifert, EBIC DEFECT CHARACTERIZATION - STATE OF UNDERSTANDING AND PROBLEMS OFINTERPRETATION, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 8-13
Authors:
SIEBER B
KITTLER M
MIRI A
LAERZ J
Citation: B. Sieber et al., A STUDY OF THE INTERACTION OF ELECTRON-BEAM GENERATED EXCESS CHARGE-CARRIERS WITH A SI SIGE/SI HETEROSTRUCTURE/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 243-248
Authors:
KNOBLOCH K
SEIFERT W
KITTLER M
Citation: K. Knobloch et al., APPLICATION OF SCANNING DEEP-LEVEL TRANSIENT SPECTROSCOPY FOR CHARACTERIZATION OF MULTICRYSTALLINE SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 254-259
Authors:
SEIFERT W
KITTLER M
VANHELLEMONT J
Citation: W. Seifert et al., EBIC STUDY OF RECOMBINATION ACTIVITY OF OXYGEN PRECIPITATION RELATED DEFECTS IN SI, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 260-264
Authors:
KITTLER M
SEIFERT W
Citation: M. Kittler et W. Seifert, A REFLECTION UPON THE APPLICABILITY OF ELECTRON-BEAM-INDUCED CURRENT (EBIC) AS A SENSITIVE MICROANALYTICAL TECHNIQUE (PPB RANGE) FOR SILICON MATERIALS RESEARCH, Scanning microscopy, 9(3), 1995, pp. 677-686
Authors:
KITTLER M
SEIFERT W
Citation: M. Kittler et W. Seifert, ANALYSIS OF RECOMBINATION ACTIVITY OF NISI2 PLATELETS IN SI, Physica status solidi. a, Applied research, 150(1), 1995, pp. 463-470
Authors:
KITTLER M
ULHAQBOUILLET C
HIGGS V
Citation: M. Kittler et al., INFLUENCE OF COPPER CONTAMINATION ON RECOMBINATION ACTIVITY OF MISFITDISLOCATIONS IN SIGE SI EPILAYERS - TEMPERATURE-DEPENDENCE OF ACTIVITY AS A MARKER CHARACTERIZING THE CONTAMINATION LEVEL/, Journal of applied physics, 78(7), 1995, pp. 4573-4583
Authors:
KITTLER M
SEIFERT W
STEMMER M
PALM J
Citation: M. Kittler et al., INTERACTION OF IRON WITH A GRAIN-BOUNDARY IN BORON-DOPED MULTICRYSTALLINE SILICON, Journal of applied physics, 77(8), 1995, pp. 3725-3728
Authors:
KITTLER M
ULHAQBOUILLET C
HIGGS V
Citation: M. Kittler et al., RECOMBINATION ACTIVITY OF CLEAN AND CONTAMINATED MISFIT DISLOCATIONS IN SI(GE) STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 52-55
Authors:
KITTLER M
SEIFERT W
Citation: M. Kittler et W. Seifert, 2 TYPES OF ELECTRON-BEAM-INDUCED CURRENT BEHAVIOR OF MISFIT DISLOCATIONS IN SI(GE) - EXPERIMENTAL-OBSERVATIONS AND MODELING, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 78-81
Authors:
BUYANOVA IA
SAVCHUK AU
SHEINKMAN MK
KITTLER M
Citation: Ia. Buyanova et al., INFLUENCE OF SUBTHRESHOLD ULTRASOUND TREATMENT ON THE RECOMBINATION PROPERTIES OF DISLOCATIONS IN GEXSI1-X-SI HETEROSTRUCTURES, Semiconductor science and technology, 9(11), 1994, pp. 2042-2046
Authors:
KITTLER M
LARZ J
Citation: M. Kittler et J. Larz, ANALYTICAL, STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF SIGE LAYERSBY ELECTRON MICROBEAM TECHNIQUES, Mikrochimica acta, 114, 1994, pp. 327-333
Authors:
HIGGS V
KITTLER M
Citation: V. Higgs et M. Kittler, INFLUENCE OF HYDROGEN ON THE ELECTRICAL AND OPTICAL-ACTIVITY OF MISFIT DISLOCATIONS IN SI SIGE EPILAYERS/, Applied physics letters, 65(22), 1994, pp. 2804-2806
Authors:
SEIFERT W
MORGENSTERN G
KITTLER M
Citation: W. Seifert et al., INFLUENCE OF DISLOCATION DENSITY ON RECOMBINATION AT GRAIN-BOUNDARIESIN MULTICRYSTALLINE SILICON, Semiconductor science and technology, 8(9), 1993, pp. 1687-1691
Authors:
KITTLER M
SEIFERT W
Citation: M. Kittler et W. Seifert, 2 CLASSES OF DEFECT RECOMBINATION BEHAVIOR IN SILICON AS STUDIED BY SEM-EBIC, Scanning, 15(6), 1993, pp. 316-321
Authors:
KITTLER M
SEIFERT W
Citation: M. Kittler et W. Seifert, ON THE ORIGIN OF EBIC DEFECT CONTRAST IN SILICON - A REFLECTION ON INJECTION AND TEMPERATURE-DEPENDENT INVESTIGATIONS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 687-693
Authors:
HIGGS V
KITTLER M
Citation: V. Higgs et M. Kittler, INVESTIGATION OF THE RECOMBINATION ACTIVITY OF MISFIT DISLOCATIONS INSI SIGE EPILAYERS BY CATHODOLUMINESCENCE IMAGING AND THE ELECTRON-BEAM-INDUCED CURRENT TECHNIQUE/, Applied physics letters, 63(15), 1993, pp. 2085-2087
Authors:
KITTLER M
SEIFERT W
RADZIMSKI ZJ
Citation: M. Kittler et al., 2 CLASSES OF RECOMBINATION BEHAVIOR AS STUDIED BY THE TECHNIQUE OF THE ELECTRON-BEAM-INDUCED CURRENT - NISI2 PARTICLES AND MISFIT DISLOCATIONS IN NI CONTAMINATED N-TYPE SILICON, Applied physics letters, 62(20), 1993, pp. 2513-2515
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