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Results: 1-9 |
Results: 9
ON THE EFFECT OF A DOPANT ON THE FORMATION OF DISORDERED REGIONS IN GAAS UNDER IRRADIATION WITH FAST-NEUTRONS
Authors: KLADKO VP PLYATSKO SV
Citation: Vp. Kladko et Sv. Plyatsko, ON THE EFFECT OF A DOPANT ON THE FORMATION OF DISORDERED REGIONS IN GAAS UNDER IRRADIATION WITH FAST-NEUTRONS, Semiconductors, 32(3), 1998, pp. 235-237
SI SI1-XGEX EPITAXIAL LAYERS AND SUPERLATTICES - GROWTH AND STRUCTURAL CHARACTERISTICS/
Authors: SIZOV FF KLADKO VP PLYATSKO SV SHEVLYAKOV AP KOZYREV YN OGENKO VM
Citation: Ff. Sizov et al., SI SI1-XGEX EPITAXIAL LAYERS AND SUPERLATTICES - GROWTH AND STRUCTURAL CHARACTERISTICS/, Semiconductors, 31(8), 1997, pp. 786-788
EFFECT OF INFRARED-LASER RADIATION ON THE STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF UNDOPED SINGLE-CRYSTAL INAS
Authors: PLYATSKO SV KLADKO VP
Citation: Sv. Plyatsko et Vp. Kladko, EFFECT OF INFRARED-LASER RADIATION ON THE STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF UNDOPED SINGLE-CRYSTAL INAS, Semiconductors, 31(10), 1997, pp. 1037-1040
TRANSFORMATION IN THE GAAS POINT-DEFECT S YSTEM CAUSED BY THE EFFECT OF INFRARED-LASER EMISSION
Authors: KLADKO VP PLYATSKO SV
Citation: Vp. Kladko et Sv. Plyatsko, TRANSFORMATION IN THE GAAS POINT-DEFECT S YSTEM CAUSED BY THE EFFECT OF INFRARED-LASER EMISSION, Pis'ma v Zurnal tehniceskoj fiziki, 22(2), 1996, pp. 32-36
PROPERTIES OF GAAS AND ALXGA1-XAS LAYERS GROWN FROM YTTERBIUM-DOPED GALLIUM MELTS BY LIQUID-PHASE EPITAXY
Authors: SEMENOVA GN KRYSHTAB TG KLADKO VP KRUKOVSKII SI SVITELSKII AV
Citation: Gn. Semenova et al., PROPERTIES OF GAAS AND ALXGA1-XAS LAYERS GROWN FROM YTTERBIUM-DOPED GALLIUM MELTS BY LIQUID-PHASE EPITAXY, Inorganic materials, 32(8), 1996, pp. 807-809
ON THE CORRELATION BETWEEN THE INTENSITY DISTRIBUTION OF THE 1.49-EV CARBON LUMINESCENCE BAND AND THE ARSENIC-VACANCY CONCENTRATION IN SEMIINSULATING UNDOPED GAAS CRYSTALS
Authors: GLINCHUK KD GUROSHEV VI KLADKO VP PROKHOROVICH AV
Citation: Kd. Glinchuk et al., ON THE CORRELATION BETWEEN THE INTENSITY DISTRIBUTION OF THE 1.49-EV CARBON LUMINESCENCE BAND AND THE ARSENIC-VACANCY CONCENTRATION IN SEMIINSULATING UNDOPED GAAS CRYSTALS, Kristallografia, 40(1), 1995, pp. 113-116
THE INFLUENCE OF THE TYPE OF INTRINSIC PO INT-DEFECTS ON THE DIFFRACTED BEAMS INTENSITY FOR QUASI-FORBIDDEN REFLECTIONS
Authors: KLADKO VP
Citation: Vp. Kladko, THE INFLUENCE OF THE TYPE OF INTRINSIC PO INT-DEFECTS ON THE DIFFRACTED BEAMS INTENSITY FOR QUASI-FORBIDDEN REFLECTIONS, UKRAINSKII FIZICHESKII ZHURNAL, 39(3-4), 1994, pp. 330-333
ALXGA1-XAS LAYERS IN GA-BI-AL-GAAS SYSTEM
Authors: KLADKO VP SEMENOV GN KRYSHTAB TG KRUKOVSKII SI
Citation: Vp. Kladko et al., ALXGA1-XAS LAYERS IN GA-BI-AL-GAAS SYSTEM, Zurnal tehniceskoj fiziki, 64(5), 1994, pp. 103-106
STRUCTURE DEFECTS AND PHOTOLUMINESCENCE OF EPITAXIAL INXGA1-XAS FILMS
Authors: SEMENOVA GN KLADKO VP KRYSHTAB TG SADOFEV YG SVITELSKII AV KORYTTSEV SV
Citation: Gn. Semenova et al., STRUCTURE DEFECTS AND PHOTOLUMINESCENCE OF EPITAXIAL INXGA1-XAS FILMS, Semiconductors, 27(1), 1993, pp. 86-89
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