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Results:
1-12
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Results: 12
Authors:
CHIKYOW T
KOGUCHI N
Citation: T. Chikyow et N. Koguchi, GAAS MICROCRYSTAL GROWTH ON SEMICONDUCTOR SURFACES BY LOW-ENERGY FOCUSED ION-BEAM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2538-2542
Authors:
SUGIYAMA M
MAEYAMA S
WATANABE Y
TSUKAMOTO S
KOGUCHI N
Citation: M. Sugiyama et al., GA-S-GA BRIDGE-BOND FORMATION ON IN-SITU S-TREATED GAAS(001) SURFACE OBSERVED BY SYNCHROTRON-RADIATION PHOTOEMISSION SPECTROSCOPY, X-RAY-ABSORPTION NEAR-EDGE STRUCTURE, AND X-RAY STANDING WAVES, Applied surface science, 132, 1998, pp. 436-440
Authors:
SHIMODA M
TSUKAMOTO S
KOGUCHI N
Citation: M. Shimoda et al., COVERAGE ANALYSIS OF A SULFUR-TERMINATED GAAS(001)-(2X6) SURFACE - THE EFFECT OF DOUBLE SULFUR-TREATMENT, Surface science, 404(1-3), 1998, pp. 669-672
Authors:
SHIMODA M
TSUKAMOTO S
KOGUCHI N
Citation: M. Shimoda et al., PHOTOELECTRON AND AUGER-ELECTRON DIFFRACTION STUDIES OF A SULFUR-TERMINATED GAAS(001)-(2X6) SURFACE, Surface science, 395(1), 1998, pp. 75-81
Authors:
CHIKYOW T
KOGUCHI N
SHIKANAI A
Citation: T. Chikyow et al., DIRECT GA DEPOSITION BY LOW-ENERGY FOCUSED ION-BEAM SYSTEM, Surface science, 386(1-3), 1997, pp. 254-258
Authors:
TSUKAMOTO S
OHNO T
KOGUCHI N
Citation: S. Tsukamoto et al., SCANNING TUNNELING SPECTROSCOPY AND FIRST-PRINCIPLES INVESTIGATION ONGAAS(001)(2X6)-S SURFACE FORMED BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 1303-1308
Authors:
TSUKAMOTO S
KOGUCHI N
Citation: S. Tsukamoto et N. Koguchi, SURFACE RECONSTRUCTION OF SULFUR-TERMINATED GAAS(001) OBSERVED DURINGANNEALING PROCESS BY SCANNING-TUNNELING-MICROSCOPY, Journal of crystal growth, 150(1-4), 1995, pp. 33-37
Authors:
TSUKAMOTO S
KOGUCHI N
Citation: S. Tsukamoto et N. Koguchi, 2X6 SURFACE RECONSTRUCTION OF IN-SITU SULFUR-TERMINATED GAAS(001) OBSERVED BY SCANNING-TUNNELING-MICROSCOPY, JPN J A P 2, 33(8B), 1994, pp. 120001185-120001188
Authors:
TSUKAMOTO S
KOGUCHI N
Citation: S. Tsukamoto et N. Koguchi, OBSERVATION OF SULFUR-TERMINATED GAAS(001)-(2X6) RECONSTRUCTION BY SCANNING-TUNNELING-MICROSCOPY, Applied physics letters, 65(17), 1994, pp. 2199-2201
Authors:
KOGUCHI N
ISHIGE K
Citation: N. Koguchi et K. Ishige, GROWTH OF GAAS EPITAXIAL MICROCRYSTALS ON AN S-TERMINATED GAAS SUBSTRATE BY SUCCESSIVE IRRADIATION OF GA AND AS MOLECULAR-BEAMS, JPN J A P 1, 32(5A), 1993, pp. 2052-2058
Authors:
KIMOTO K
MASUMOTO K
NODA Y
KUMAZAWA K
KIYOSAWA T
KOGUCHI N
Citation: K. Kimoto et al., SOLID SOLUBILITY DETERMINATION AND SINGLE-CRYSTAL PREPARATION OF NEW QUATERNARY SOLID-SOLUTION SYSTEM OF (PB1-XGEX)(S1-ZSEZ), JPN J A P 1, 32, 1993, pp. 187-189
Authors:
NORENBERG H
KOGUCHI N
Citation: H. Norenberg et N. Koguchi, ARSENIC ADSORPTION ON GAAS(001), Surface science, 296(2), 1993, pp. 199-212
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