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Results: 1-9 |
Results: 9
LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON STUDIED BY THE CONSTANT-PHOTOCURRENT METHOD
Authors: SCHMIDT JA ARCE R BUITRAGO RH KOROPECKI RR
Citation: Ja. Schmidt et al., LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON STUDIED BY THE CONSTANT-PHOTOCURRENT METHOD, Physical review. B, Condensed matter, 55(15), 1997, pp. 9621-9627
CONDUCTIVITY DEPENDENCE ON THE THICKNESS OF HYDROGENATED, AMORPHOUS SILICON-CARBON FILMS
Authors: KOROPECKI RR ARCE RD BUITRAGO RH BITTENCOURT C ALVAREZ F
Citation: Rr. Koropecki et al., CONDUCTIVITY DEPENDENCE ON THE THICKNESS OF HYDROGENATED, AMORPHOUS SILICON-CARBON FILMS, Thin solid films, 295(1-2), 1997, pp. 287-294
FIRST STAGES OF OXIDATION OF YB THIN-FILMS - AN AUGER-SPECTROSCOPY STUDY
Authors: CONCARI S VAQUILA I KOROPECKI RR FERRON J
Citation: S. Concari et al., FIRST STAGES OF OXIDATION OF YB THIN-FILMS - AN AUGER-SPECTROSCOPY STUDY, Anales de la Asociacion Quimica Argentina, 84(2), 1996, pp. 185-190
DEPENDENCY OF METASTABLE DEFECT DENSITY ON ILLUMINATION TIME IN HYDROGENATED AMORPHOUS-SILICON
Authors: SCHMIDT JA ARCE R KOROPECKI RR BUITRAGO RH
Citation: Ja. Schmidt et al., DEPENDENCY OF METASTABLE DEFECT DENSITY ON ILLUMINATION TIME IN HYDROGENATED AMORPHOUS-SILICON, Anales de la Asociacion Quimica Argentina, 84(1), 1996, pp. 39-43
AMORPHOUS-SILICON CARBIDE FILMS PREPARED BY PECVD UNDER HYDROGEN DILUTION AND HIGH-EXCITATION FREQUENCY
Authors: ARCE R KOROPECKI RR BUITRAGO RH CUTRERA M BATTIONI M
Citation: R. Arce et al., AMORPHOUS-SILICON CARBIDE FILMS PREPARED BY PECVD UNDER HYDROGEN DILUTION AND HIGH-EXCITATION FREQUENCY, Anales de la Asociacion Quimica Argentina, 84(1), 1996, pp. 55-59
EFFECTS OF THE CARRIER GAS ON PROPERTIES OF SNO2 DEPOSITED BY PYROLYSIS
Authors: OCAMPO E ARCE R KOROPECKI RR BUITRAGO RH
Citation: E. Ocampo et al., EFFECTS OF THE CARRIER GAS ON PROPERTIES OF SNO2 DEPOSITED BY PYROLYSIS, Solar energy materials and solar cells, 36(4), 1995, pp. 327-337
ANNEALING-INDUCED EFFECTS ON THE STABILITY OF HYDROGENATED AMORPHOUS-SILICON
Authors: SCHMIDT JA KOROPECKI RR ARCE R BUITRAGO RH
Citation: Ja. Schmidt et al., ANNEALING-INDUCED EFFECTS ON THE STABILITY OF HYDROGENATED AMORPHOUS-SILICON, Journal of applied physics, 78(10), 1995, pp. 5959-5964
THE THICKNESS DEPENDENCE OF ELECTRONIC-PROPERTIES OF DOPED A-SI-H ALLOYS
Authors: ARCE R KOROPECKI RR CUTRERA M BUITRAGO R
Citation: R. Arce et al., THE THICKNESS DEPENDENCE OF ELECTRONIC-PROPERTIES OF DOPED A-SI-H ALLOYS, Journal of physics. Condensed matter, 5, 1993, pp. 339-340
EFFECT OF THE DEPOSITION VARIABLES ON AMORPHOUS-SILICON STABILITY
Authors: BUITRAGO RH ARCE RD KOROPECKI RR
Citation: Rh. Buitrago et al., EFFECT OF THE DEPOSITION VARIABLES ON AMORPHOUS-SILICON STABILITY, Journal of non-crystalline solids, 166, 1993, pp. 259-262
Risultati: 1-9 |