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Results: 1-12 |
Results: 12
RADIATION-INDUCED GAIN DEGRADATION IN LATERAL PNP BJTS WITH LIGHTLY AND HEAVILY-DOPED EMITTERS
Authors: WU A SCHRIMPF RD BARNABY HJ FLEETWOOD DM PEASE RL KOSIER SL
Citation: A. Wu et al., RADIATION-INDUCED GAIN DEGRADATION IN LATERAL PNP BJTS WITH LIGHTLY AND HEAVILY-DOPED EMITTERS, IEEE transactions on nuclear science, 44(6), 1997, pp. 1914-1921
A METHOD FOR PREDICTING BREAKDOWN VOLTAGE OF POWER DEVICES WITH CYLINDRICAL DIFFUSED JUNCTIONS
Authors: CHAI FK KOSIER SL SCHRIMPF RD GALLOWAY KF
Citation: Fk. Chai et al., A METHOD FOR PREDICTING BREAKDOWN VOLTAGE OF POWER DEVICES WITH CYLINDRICAL DIFFUSED JUNCTIONS, Solid-state electronics, 38(8), 1995, pp. 1547-1549
EXCESS COLLECTOR CURRENT DUE TO AN OXIDE-TRAPPED-CHARGE-INDUCED EMITTER IN IRRADIATED NPN BJTS
Authors: WEI A KOSIER SL SCHRIMPF RD COMBS WE DELAUS M
Citation: A. Wei et al., EXCESS COLLECTOR CURRENT DUE TO AN OXIDE-TRAPPED-CHARGE-INDUCED EMITTER IN IRRADIATED NPN BJTS, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 923-927
PHYSICALLY-BASED COMPARISON OF HOT-CARRIER-INDUCED AND IONIZING-RADIATION-INDUCED DEGRADATION IN BJTS
Authors: KOSIER SL WEI A SCHRIMPF RD FLEETWOOD DM DELAUS MD COMBS WE
Citation: Sl. Kosier et al., PHYSICALLY-BASED COMPARISON OF HOT-CARRIER-INDUCED AND IONIZING-RADIATION-INDUCED DEGRADATION IN BJTS, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 436-444
COMPARISON OF TERMINATION METHODS FOR LOW-VOLTAGE, VERTICAL INTEGRATED POWER DEVICES
Authors: KOSIER SL WEI A SHIBIB MA SCHRIMPF RD DESKO JC GALLOWAY KF
Citation: Sl. Kosier et al., COMPARISON OF TERMINATION METHODS FOR LOW-VOLTAGE, VERTICAL INTEGRATED POWER DEVICES, Solid-state electronics, 37(9), 1994, pp. 1611-1617
EFFECT OF NEUTRON-IRRADIATION ON THE BREAKDOWN VOLTAGE OF POWER MOSFETS
Authors: HASAN SMY KOSIER SL SCHRIMPF RD GALLOWAY KF
Citation: Smy. Hasan et al., EFFECT OF NEUTRON-IRRADIATION ON THE BREAKDOWN VOLTAGE OF POWER MOSFETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2719-2726
BOUNDING THE TOTAL-DOSE RESPONSE OF MODERN BIPOLAR-TRANSISTORS
Authors: KOSIER SL COMBS WE WEI A SCHRIMPF RD FLEETWOOD DM DELAUS M PEASE RL
Citation: Sl. Kosier et al., BOUNDING THE TOTAL-DOSE RESPONSE OF MODERN BIPOLAR-TRANSISTORS, IEEE transactions on nuclear science, 41(6), 1994, pp. 1864-1870
PHYSICAL-MECHANISMS CONTRIBUTING TO ENHANCED BIPOLAR GAIN DEGRADATIONAT LOW-DOSE RATES
Authors: FLEETWOOD DM KOSIER SL NOWLIN RN SCHRIMPF RD REBER RA DELAUS M WINOKUR PS WEI A COMBS WE PEASE RL
Citation: Dm. Fleetwood et al., PHYSICAL-MECHANISMS CONTRIBUTING TO ENHANCED BIPOLAR GAIN DEGRADATIONAT LOW-DOSE RATES, IEEE transactions on nuclear science, 41(6), 1994, pp. 1871-1883
SYNERGETIC EFFECTS OF RADIATION STRESS AND HOT-CARRIER STRESS ON THE CURRENT GAIN OF NPN BIPOLAR JUNCTION TRANSISTORS
Authors: WITCZAK SC KOSIER SL SCHRIMPF RD GALLOWAY KF
Citation: Sc. Witczak et al., SYNERGETIC EFFECTS OF RADIATION STRESS AND HOT-CARRIER STRESS ON THE CURRENT GAIN OF NPN BIPOLAR JUNCTION TRANSISTORS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2412-2419
COMPARISON OF HOT-CARRIER AND RADIATION-INDUCED INCREASES IN BASE CURRENT IN BIPOLAR-TRANSISTORS
Authors: PEASE RL KOSIER SL SCHRIMPF RD COMBS WE DAVEY M DELAUS M FLEETWOOD DM
Citation: Rl. Pease et al., COMPARISON OF HOT-CARRIER AND RADIATION-INDUCED INCREASES IN BASE CURRENT IN BIPOLAR-TRANSISTORS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2567-2573
DOSE-RATE EFFECTS ON RADIATION-INDUCED BIPOLAR JUNCTION TRANSISTOR GAIN DEGRADATION
Authors: WEI A KOSIER SL SCHRIMPF RD FLEETWOOD DM COMBS WE
Citation: A. Wei et al., DOSE-RATE EFFECTS ON RADIATION-INDUCED BIPOLAR JUNCTION TRANSISTOR GAIN DEGRADATION, Applied physics letters, 65(15), 1994, pp. 1918-1920
CHARGE SEPARATION FOR BIPOLAR-TRANSISTORS
Authors: KOSIER SL SCHRIMPF RD NOWLIN RN FLEETWOOD DM DELAUS M PEASE RL COMBS WE WEI A CHAI F
Citation: Sl. Kosier et al., CHARGE SEPARATION FOR BIPOLAR-TRANSISTORS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1276-1285
Risultati: 1-12 |