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Results:
1-13
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Results: 13
Authors:
WASSHUBER C
KOSINA H
Citation: C. Wasshuber et H. Kosina, SIMULATION OF A SINGLE-ELECTRON TUNNEL TRANSISTOR WITH INCLUSION OF INELASTIC MACROSCOPIC QUANTUM TUNNELING OF CHARGE, VLSI design (Print), 6(1-4), 1998, pp. 35-38
Authors:
KAIBLINGERGRUJIN G
KOSINA H
Citation: G. Kaiblingergrujin et H. Kosina, AN IMPROVED IONIZED IMPURITY SCATTERING MODEL FOR MONTE-CARLO CALCULATIONS, VLSI design (Print), 6(1-4), 1998, pp. 209-212
Authors:
KOSINA H
KAIBLINGERGRUJIN G
Citation: H. Kosina et G. Kaiblingergrujin, IONIZED-IMPURITY SCATTERING OF MAJORITY ELECTRONS IN SILICON, Solid-state electronics, 42(3), 1998, pp. 331-338
Authors:
KAIBLINGERGRUJIN G
KOSINA H
SELBERHERR S
Citation: G. Kaiblingergrujin et al., INFLUENCE OF THE DOPING ELEMENT ON THE ELECTRON-MOBILITY IN N-SILICON, Journal of applied physics, 83(6), 1998, pp. 3096-3101
Authors:
WASSHUBER C
KOSINA H
SELBERHERR S
Citation: C. Wasshuber et al., A COMPARATIVE-STUDY OF SINGLE-ELECTRON MEMORIES, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2365-2371
Authors:
WASSHUBER C
KOSINA H
Citation: C. Wasshuber et H. Kosina, A SINGLE-ELECTRON DEVICE AND CIRCUIT SIMULATOR, Superlattices and microstructures, 21(1), 1997, pp. 37-42
Authors:
WASSHUBER C
KOSINA H
SELBERHERR S
Citation: C. Wasshuber et al., SIMON - A SIMULATOR FOR SINGLE-ELECTRON TUNNEL DEVICES AND CIRCUITS, IEEE transactions on computer-aided design of integrated circuits and systems, 16(9), 1997, pp. 937-944
Authors:
KOPF C
KOSINA H
SELBERHERR S
Citation: C. Kopf et al., PHYSICAL MODELS FOR STRAINED AND RELAXED GAINAS ALLOYS - BAND-STRUCTURE AND LOW-FIELD TRANSPORT, Solid-state electronics, 41(8), 1997, pp. 1139-1152
Authors:
KOSINA H
Citation: H. Kosina, EFFICIENT EVALUATION OF IONIZED-IMPURITY SCATTERING IN MONTE-CARLO TRANSPORT CALCULATIONS, Physica status solidi. a, Applied research, 163(2), 1997, pp. 475-489
Authors:
HALAMA S
FASCHING F
FISCHER C
KOSINA H
LEITNER E
LINDORFER P
PICHLER C
PIMINGSTORFER H
PUCHNER H
RIEGER G
SCHROM G
SIMLINGER T
STIFTINGER M
STIPPEL H
STRASSER E
TUPPA W
WIMMER K
SELBERHERR S
Citation: S. Halama et al., THE VIENNESE INTEGRATED SYSTEM FOR TECHNOLOGY CAD APPLICATIONS, Microelectronics, 26(2-3), 1995, pp. 137-158
Authors:
KOSINA H
LANGER E
SELBERHERR S
Citation: H. Kosina et al., DEVICE MODELING FOR THE 1990S, Microelectronics, 26(2-3), 1995, pp. 217-233
Authors:
KOSINA H
SELBERHERR S
Citation: H. Kosina et S. Selberherr, A HYBRID DEVICE SIMULATOR THAT COMBINES MONTE-CARLO AND DRIFT-DIFFUSION ANALYSIS, IEEE transactions on computer-aided design of integrated circuits and systems, 13(2), 1994, pp. 201-210
Authors:
ABRAMO A
BAUDRY L
BRUNETTI R
CASTAGNE R
CHAREF M
DESSENNE F
DOLLFUS P
DUTTON R
ENGL WL
FAUQUEMBERGUE R
FIEGNA C
FISCHETTI MV
GALDIN S
GOLDSMAN N
HACKEL M
HAMAGUCHI C
HESS K
HENNACY K
HESTO P
HIGMAN JM
IIZUKA T
JUNGEMANN C
KAMAKURA Y
KOSINA H
KUNIKIYO T
LAUX SE
LIM HC
MAZIAR C
MIZUNO H
PEIFER HJ
RAMASWAMY S
SANO N
SCORBOHACI PG
SELBERHERR S
TAKENAKA M
TANG TW
TANIGUCHI K
THOBEL JL
THOMA R
TOMIZAWA K
TOMIPZAWA M
VOGELSANG T
WANG SL
WANG XL
YAO CS
YODER PD
YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
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1-13
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