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Results: 1-13 |
Results: 13

Authors: WASSHUBER C KOSINA H
Citation: C. Wasshuber et H. Kosina, SIMULATION OF A SINGLE-ELECTRON TUNNEL TRANSISTOR WITH INCLUSION OF INELASTIC MACROSCOPIC QUANTUM TUNNELING OF CHARGE, VLSI design (Print), 6(1-4), 1998, pp. 35-38

Authors: KAIBLINGERGRUJIN G KOSINA H
Citation: G. Kaiblingergrujin et H. Kosina, AN IMPROVED IONIZED IMPURITY SCATTERING MODEL FOR MONTE-CARLO CALCULATIONS, VLSI design (Print), 6(1-4), 1998, pp. 209-212

Authors: KOSINA H KAIBLINGERGRUJIN G
Citation: H. Kosina et G. Kaiblingergrujin, IONIZED-IMPURITY SCATTERING OF MAJORITY ELECTRONS IN SILICON, Solid-state electronics, 42(3), 1998, pp. 331-338

Authors: KAIBLINGERGRUJIN G KOSINA H SELBERHERR S
Citation: G. Kaiblingergrujin et al., INFLUENCE OF THE DOPING ELEMENT ON THE ELECTRON-MOBILITY IN N-SILICON, Journal of applied physics, 83(6), 1998, pp. 3096-3101

Authors: WASSHUBER C KOSINA H SELBERHERR S
Citation: C. Wasshuber et al., A COMPARATIVE-STUDY OF SINGLE-ELECTRON MEMORIES, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2365-2371

Authors: WASSHUBER C KOSINA H
Citation: C. Wasshuber et H. Kosina, A SINGLE-ELECTRON DEVICE AND CIRCUIT SIMULATOR, Superlattices and microstructures, 21(1), 1997, pp. 37-42

Authors: WASSHUBER C KOSINA H SELBERHERR S
Citation: C. Wasshuber et al., SIMON - A SIMULATOR FOR SINGLE-ELECTRON TUNNEL DEVICES AND CIRCUITS, IEEE transactions on computer-aided design of integrated circuits and systems, 16(9), 1997, pp. 937-944

Authors: KOPF C KOSINA H SELBERHERR S
Citation: C. Kopf et al., PHYSICAL MODELS FOR STRAINED AND RELAXED GAINAS ALLOYS - BAND-STRUCTURE AND LOW-FIELD TRANSPORT, Solid-state electronics, 41(8), 1997, pp. 1139-1152

Authors: KOSINA H
Citation: H. Kosina, EFFICIENT EVALUATION OF IONIZED-IMPURITY SCATTERING IN MONTE-CARLO TRANSPORT CALCULATIONS, Physica status solidi. a, Applied research, 163(2), 1997, pp. 475-489

Authors: HALAMA S FASCHING F FISCHER C KOSINA H LEITNER E LINDORFER P PICHLER C PIMINGSTORFER H PUCHNER H RIEGER G SCHROM G SIMLINGER T STIFTINGER M STIPPEL H STRASSER E TUPPA W WIMMER K SELBERHERR S
Citation: S. Halama et al., THE VIENNESE INTEGRATED SYSTEM FOR TECHNOLOGY CAD APPLICATIONS, Microelectronics, 26(2-3), 1995, pp. 137-158

Authors: KOSINA H LANGER E SELBERHERR S
Citation: H. Kosina et al., DEVICE MODELING FOR THE 1990S, Microelectronics, 26(2-3), 1995, pp. 217-233

Authors: KOSINA H SELBERHERR S
Citation: H. Kosina et S. Selberherr, A HYBRID DEVICE SIMULATOR THAT COMBINES MONTE-CARLO AND DRIFT-DIFFUSION ANALYSIS, IEEE transactions on computer-aided design of integrated circuits and systems, 13(2), 1994, pp. 201-210

Authors: ABRAMO A BAUDRY L BRUNETTI R CASTAGNE R CHAREF M DESSENNE F DOLLFUS P DUTTON R ENGL WL FAUQUEMBERGUE R FIEGNA C FISCHETTI MV GALDIN S GOLDSMAN N HACKEL M HAMAGUCHI C HESS K HENNACY K HESTO P HIGMAN JM IIZUKA T JUNGEMANN C KAMAKURA Y KOSINA H KUNIKIYO T LAUX SE LIM HC MAZIAR C MIZUNO H PEIFER HJ RAMASWAMY S SANO N SCORBOHACI PG SELBERHERR S TAKENAKA M TANG TW TANIGUCHI K THOBEL JL THOMA R TOMIZAWA K TOMIPZAWA M VOGELSANG T WANG SL WANG XL YAO CS YODER PD YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
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