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Results: 1-17 |
Results: 17
WEAK-FIELD MAGNETORESISTANCE OF 2-DIMENSIONAL ELECTRONS IN IN0.53GA0.47AS INP HETEROSTRUCTURES IN THE PERSISTENT PHOTOCONDUCTIVITY REGIME/
Authors: BYKANOV DD KRESHCHUK AM NOVIKOV SV POLYANSKAYA TA SAVELEV IG
Citation: Dd. Bykanov et al., WEAK-FIELD MAGNETORESISTANCE OF 2-DIMENSIONAL ELECTRONS IN IN0.53GA0.47AS INP HETEROSTRUCTURES IN THE PERSISTENT PHOTOCONDUCTIVITY REGIME/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 985-991
ENERGY RELAXATION IN 2-DIMENSIONAL ELECTRON-GAS IN INGAAS INP VIA ELECTRON-ACOUSTIC PHONON INTERACTION/
Authors: KRESHCHUK AM NOVIKOV SV SAVELEV IG POLYANSKAYA TA PODOR B REMENYI G KOVACS G
Citation: Am. Kreshchuk et al., ENERGY RELAXATION IN 2-DIMENSIONAL ELECTRON-GAS IN INGAAS INP VIA ELECTRON-ACOUSTIC PHONON INTERACTION/, Acta Physica Polonica. A, 94(3), 1998, pp. 415-420
THE NONLINEAR EFFECTS IN 2DEG CONDUCTIVITY INVESTIGATION BY AN ACOUSTIC METHOD
Authors: DRICHKO IL DIAKONOV AM KAGAN VD KRESHCHUK AM POLYANSKAYA TA SAVELEV IG SMIRNOV IY SUSLOV AV
Citation: Il. Drichko et al., THE NONLINEAR EFFECTS IN 2DEG CONDUCTIVITY INVESTIGATION BY AN ACOUSTIC METHOD, Physica status solidi. b, Basic research, 205(1), 1998, pp. 357-361
SPIN-ORBIT-SPLITTING AND WEAK ANTILOCALIZATION IN AN ASYMMETRIC IN0.53GA0.47AS INP QUANTUM-WELL/
Authors: KRESHCHUK AM NOVIKOV SV POLYANSKAYA TA SAVELEV IG
Citation: Am. Kreshchuk et al., SPIN-ORBIT-SPLITTING AND WEAK ANTILOCALIZATION IN AN ASYMMETRIC IN0.53GA0.47AS INP QUANTUM-WELL/, Semiconductor science and technology, 13(4), 1998, pp. 384-388
ELECTRON LOCALIZATION IN SOUND-ABSORPTION OSCILLATIONS IN THE QUANTUMHALL-EFFECT REGIME
Authors: DRICHKO IL DYAKONOV AM KRESHCHUK AM POLYANSKAYA TA SAVELEV IG SMIRNOV IY SUSLOV AV
Citation: Il. Drichko et al., ELECTRON LOCALIZATION IN SOUND-ABSORPTION OSCILLATIONS IN THE QUANTUMHALL-EFFECT REGIME, Semiconductors, 31(4), 1997, pp. 384-390
SPIN RELAXATION AND WEAK-LOCALIZATION OF 2-DIMENSIONAL ELECTRONS IN ASYMMETRIC QUANTUM-WELLS
Authors: KRESHCHUK AM NOVIKOV SV POLYANSKAYA TA SAVELEV IG
Citation: Am. Kreshchuk et al., SPIN RELAXATION AND WEAK-LOCALIZATION OF 2-DIMENSIONAL ELECTRONS IN ASYMMETRIC QUANTUM-WELLS, Semiconductors, 31(4), 1997, pp. 391-398
HEATING OF A 2-DIMENSIONAL ELECTRON-GAS BY THE ELECTRIC-FIELD OF A SURFACE-ACOUSTIC-WAVE
Authors: DRICHKO IL DYAKONOV AM KAGAN VD KRESHCHUK AM POLYANSKAYA TA SAVELEV IG SMIRNOV IY SUSLOV AV
Citation: Il. Drichko et al., HEATING OF A 2-DIMENSIONAL ELECTRON-GAS BY THE ELECTRIC-FIELD OF A SURFACE-ACOUSTIC-WAVE, Semiconductors, 31(11), 1997, pp. 1170-1177
QUENCHING OF PERSISTENT PHOTOCONDUCTIVITY BY ELECTRICAL PULSES
Authors: KRESHCHUK AM NOVIKOV SV SAVELEV IG
Citation: Am. Kreshchuk et al., QUENCHING OF PERSISTENT PHOTOCONDUCTIVITY BY ELECTRICAL PULSES, Semiconductors, 30(5), 1996, pp. 497-500
EFFECT OF A STRONG ELECTRIC-FIELD ON THE PROPERTIES OF A NONEQUILIBRIUM, 2-DIMENSIONAL ELECTRON-GAS IN NONIDEAL HETEROSTRUCTURES
Authors: KRESHCHUK AM NOVIKOV SV SAVELEV IG
Citation: Am. Kreshchuk et al., EFFECT OF A STRONG ELECTRIC-FIELD ON THE PROPERTIES OF A NONEQUILIBRIUM, 2-DIMENSIONAL ELECTRON-GAS IN NONIDEAL HETEROSTRUCTURES, Semiconductors, 30(5), 1996, pp. 501-506
SPIN SPLITTING OF THE LANDAU-LEVELS AND EXCHANGE INTERACTION OF A NONIDEAL 2-DIMENSIONAL ELECTRON-GAS IN INXGA1-XAS INP HETEROSTRUCTURES/
Authors: SAVELEV IG KRESHCHUK AM NOVIKOV SV SHIK AY REMENYI G KOVACS G PODOR B GOMBOS G
Citation: Ig. Savelev et al., SPIN SPLITTING OF THE LANDAU-LEVELS AND EXCHANGE INTERACTION OF A NONIDEAL 2-DIMENSIONAL ELECTRON-GAS IN INXGA1-XAS INP HETEROSTRUCTURES/, Journal of physics. Condensed matter, 8(46), 1996, pp. 9025-9036
LOW-TEMPERATURE INVESTIGATION OF THE 2DEG CONDUCTIVITY BY ACOUSTIC METHODS
Authors: DRICHKO IL DIAKONOV AM KAGAN VD KRESHCHUK AM POLYANSKAYA TA SAVELEV IG SMIRNOV IY SUSLOV AV
Citation: Il. Drichko et al., LOW-TEMPERATURE INVESTIGATION OF THE 2DEG CONDUCTIVITY BY ACOUSTIC METHODS, Czechoslovak journal of Physics, 46, 1996, pp. 2465-2466
DETERMINATION OF THE PROPERTIES OF THE 2D ELECTRON-GAS IN INGAAS INP STRUCTURES BY ACOUSTIC METHODS UNDER THE CONDITIONS OF THE QUANTUM HALL-EFFECT/
Authors: DRICHKO IL DYAKONOV AM KAGAN VD KRESHCHUK AM KIPSHIDZE GD POLYANSKAYA TA SAVELEV IG SMIRNOV IY SUSLOV AV SHIK AY
Citation: Il. Drichko et al., DETERMINATION OF THE PROPERTIES OF THE 2D ELECTRON-GAS IN INGAAS INP STRUCTURES BY ACOUSTIC METHODS UNDER THE CONDITIONS OF THE QUANTUM HALL-EFFECT/, Semiconductors, 29(7), 1995, pp. 677-679
WIGNER CRYSTALLIZATION IN INGAAS INP HETEROSTRUCTURES WITH A STRONG DISORDER/
Authors: KOVACS G REMENYI G GOMBOS G SAVELEV IG KRESHCHUK AM HEGMAN N PODOR B
Citation: G. Kovacs et al., WIGNER CRYSTALLIZATION IN INGAAS INP HETEROSTRUCTURES WITH A STRONG DISORDER/, Acta Physica Polonica. A, 88(4), 1995, pp. 783-786
QUANTUM TRANSPORT EFFECTS IN A 2-DIMENSIONAL ELECTRON-GAS AS A TOOL FOR THE INVESTIGATION OF HETEROINTERFACES
Authors: KRESHCHUK AM NOVIKOV SV POLYANSKAYA TA SAVELEV IG SHIK AY
Citation: Am. Kreshchuk et al., QUANTUM TRANSPORT EFFECTS IN A 2-DIMENSIONAL ELECTRON-GAS AS A TOOL FOR THE INVESTIGATION OF HETEROINTERFACES, Journal of crystal growth, 146(1-4), 1995, pp. 153-158
QUANTUM WIRES WITH CONTROLLABLE CONDUCTING-CHANNEL WIDTH BASED ON IN0.53GA0.47AS INP HETEROSTRUCTURES/
Authors: DROZDOV SV KIPSHIZDE GD KRESHCHUK AM KULAGINA MM NOVIKOV SV SAVELEV IG
Citation: Sv. Drozdov et al., QUANTUM WIRES WITH CONTROLLABLE CONDUCTING-CHANNEL WIDTH BASED ON IN0.53GA0.47AS INP HETEROSTRUCTURES/, Semiconductors, 28(2), 1994, pp. 183-187
SHUBNIKOV-DEHASS OSCILLATIONS IN A NONUNIFORM 2D ELECTRON-GAS
Authors: BYSTROV SD KRESHCHUK AM LE TA NOVIKOV SV POLYANSKAYA TA SAVELEV IG SHIK AY
Citation: Sd. Bystrov et al., SHUBNIKOV-DEHASS OSCILLATIONS IN A NONUNIFORM 2D ELECTRON-GAS, Semiconductors, 28(1), 1994, pp. 55-59
QUANTUM AND CLASSICAL RELAXATION-TIMES AND PROPERTIES OF A HETEROJUNCTION IN SELECTIVELY DOPED INP IN0.53GA0.47AS HETEROSTRUCTURES/
Authors: BYSTROV SD KRESHCHUK AM NOVIKOV SV POLYANSKAYA TA SAVELEV IG
Citation: Sd. Bystrov et al., QUANTUM AND CLASSICAL RELAXATION-TIMES AND PROPERTIES OF A HETEROJUNCTION IN SELECTIVELY DOPED INP IN0.53GA0.47AS HETEROSTRUCTURES/, Semiconductors, 27(4), 1993, pp. 358-362
Risultati: 1-17 |