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Results:
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Results: 13
Authors:
MARKWITZ A
ARPS M
BAUMANN H
DEMORTIER G
KRIMMEL EF
BETHGE K
Citation: A. Markwitz et al., STUDY OF ELECTRONIC-PROPERTIES AND DEPTH PROFILES OF BURIED AND NEAR-SURFACE SILICON-NITRIDE LAYERS PRODUCED BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 124(4), 1997, pp. 506-514
Authors:
MARKWITZ A
BAUMANN H
MICHELMANN RW
MEYER JD
KRIMMEL EF
BETHGE K
Citation: A. Markwitz et al., MOLECULAR ION-IMPLANTATION IN SILICON, Mikrochimica acta, 125(1-4), 1997, pp. 313-316
Authors:
MARKWITZ A
BAUMANN H
MICHELMANN RW
MEYER JD
KRIMMEL EF
BETHGE K
Citation: A. Markwitz et al., NITROGEN DEPTH DISTRIBUTION, INTERFACE AND STRUCTURE-ANALYSIS OF SINXLAYERS PRODUCED BY LOW-ENERGY ION-IMPLANTATION, Mikrochimica acta, 125(1-4), 1997, pp. 337-341
Authors:
MARKWITZ A
ARPS M
BAUMANN H
KRIMMEL EF
BETHGE K
Citation: A. Markwitz et al., DEPTH PROFILE ANALYSIS AND STUDY OF THE ELECTRONIC-PROPERTIES OF SILICON-NITRIDE LAYERS PRODUCED BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 223-226
Authors:
LINK F
BAUMANN H
MARKWITZ A
KRIMMEL EF
BETHGE K
Citation: F. Link et al., LOW-ENERGY N-15 IMPLANTATION IN CARBON FOR THE SYNTHESIS OF CARBON NITRIDE LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 235-238
Authors:
MARKWITZ A
KLEIN S
MICHELMANN RW
BAUMANN H
KRIMMEL EF
BETHGE K
Citation: A. Markwitz et al., LAYER AND INTERFACE ANALYSIS OF ULTRA-THIN ION-BEAM PRODUCED SILICON-NITRIDE LAYERS BY NRA AND TEM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 284-288
Authors:
MARKWITZ A
BAUMANN H
GRILL W
HEINZ B
ROSELER A
KRIMMEL EF
BETHGE K
Citation: A. Markwitz et al., SURFACE-NEAR ANALYSES OF ULTRA-THIN SILICON-NITRIDE LAYERS BY NRA, CHANNELING RBS, FT IR ELLIPSOMETRY AND AFM, Fresenius' journal of analytical chemistry, 353(5-8), 1995, pp. 734-739
Authors:
MICHELMANN RW
BAUMANN H
MARKWITZ A
MEYER JD
ROSELER A
KRIMMEL EF
BETHGE K
Citation: Rw. Michelmann et al., COMBINED NRA, CHANNELING-RES AND FTIR ELLIPSOMETRY ANALYSES FOR THE DETERMINATION OF THE INTERFACE AND BONDING STATE OF THIN SIOX AND SINXOY LAYERS, Fresenius' journal of analytical chemistry, 353(3-4), 1995, pp. 403-407
Authors:
MARKWITZ A
BAUMANN H
KRIMMEL EF
MICHELMANN RW
MAURER C
PALOURA EC
KNOP A
BETHGE K
Citation: A. Markwitz et al., CHEMICAL BONDING AND INTERFACE ANALYSIS OF ULTRATHIN SILICON-NITRIDE LAYERS PRODUCED BY ION-IMPLANTATION AND ELECTRON-BEAM RAPID THERMAL ANNEALING (EB-RTA), Applied physics. A, Solids and surfaces, 59(4), 1994, pp. 435-439
Authors:
MARKWITZ A
BAUMANN H
GRILL W
KNOP A
KRIMMEL EF
BETHGE K
Citation: A. Markwitz et al., INVESTIGATIONS OF ULTRATHIN SILICON-NITRIDE LAYERS PRODUCED BY LOW-ENERGY ION-IMPLANTATION AND EB-RTA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 362-368
Authors:
MARKWITZ A
BAUMANN H
KRIMMEL EF
BETHGE K
GRILL W
Citation: A. Markwitz et al., CHANGE OF SURFACE-STRUCTURE OF THIN SILICON-NITRIDE LAYERS DURING ELECTRON-BEAM RAPID THERMAL ANNEALING, Applied physics letters, 64(20), 1994, pp. 2652-2654
Authors:
MARKWITZ A
BAUMANN H
KRIMMEL EF
BETHGE K
MISAELIDES P
Citation: A. Markwitz et al., CHARACTERIZATION OF THIN SPUTTERED SILICON-NITRIDE FILMS BY NRA, ERDA, RBS AND SEM, Fresenius' journal of analytical chemistry, 346(1-3), 1993, pp. 177-180
Authors:
MAURER C
KALLWEIT R
BAUMANN H
BETHGE K
KRIMMEL EF
Citation: C. Maurer et al., IN-SITU DETECTION OF REARRANGEMENT PROCESSES DURING ELECTRON-BEAM ANNEALING OF ION-IMPLANTED INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 564-568
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1-13
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