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Results:
1-13
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Results: 13
Authors:
KROZER V
RUPPERT M
SCHUSSLER M
FRICKE K
LEE WY
HARTNAGEL HL
Citation: V. Krozer et al., CALCULATION OF THE POWER CAPABILITIES OF HBT AMPLIFIERS BASED ON A NEW PHYSICAL HBT MODEL, International journal of microwave and millimeter-wave computer-aided engineering, 6(4), 1996, pp. 270-280
Authors:
BRANDT M
KROZER V
SCHUSSLER M
BOCK KH
HARTNAGEL HL
Citation: M. Brandt et al., CHARACTERIZATION OF RELIABILITY OF COMPOUND SEMICONDUCTOR-DEVICES USING ELECTRICAL PULSES, Microelectronics and reliability, 36(11-12), 1996, pp. 1891-1894
Authors:
SCHUSSLER M
KROZER V
BOCK KH
BRANDT M
VECCI L
LOSI R
HARTNAGEL HL
Citation: M. Schussler et al., PULSED STRESS RELIABILITY INVESTIGATIONS OF SCHOTTKY DIODES AND HBTS, Microelectronics and reliability, 36(11-12), 1996, pp. 1907-1910
Authors:
DEHE A
KROZER V
CHEN B
HARTNAGEL HL
Citation: A. Dehe et al., HIGH-SENSITIVITY MICROWAVE-POWER SENSOR FOR GAAS-MMIC IMPLEMENTATION, Electronics Letters, 32(23), 1996, pp. 2149-2150
Authors:
SCHUSSLER M
STATZNER T
LIN CI
KROZER V
HORN J
HARTNAGEL HL
Citation: M. Schussler et al., ELECTROCHEMICAL DEPOSITION OF PD, TI, AND GE FOR APPLICATIONS IN GAASTECHNOLOGY, Journal of the Electrochemical Society, 143(4), 1996, pp. 73-75
Authors:
FRICKE K
KROZER V
Citation: K. Fricke et V. Krozer, SOLID-STATE MATERIALS FOR ADVANCED TECHNOLOGY - CONTAINING PAPERS PRESENTED AT THE EUROPEAN-MATERIALS-RESEARCH-SOCIETY 1994 SPRING MEETING,SYMPOSIUM-E - HIGH-TEMPERATURE ELECTRONICS - MATERIALS, DEVICES AND APPLICATIONS, MAY 24-27, 1994, STRASBOURG, FRANCE - PREFACE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 9-9
Authors:
PANTOJA JMM
GRUB A
KROZER V
FRANCO JLS
Citation: Jmm. Pantoja et al., ACCURACY OF NONOSCILLATING ONE-PORT NOISE MEASUREMENTS, IEEE transactions on instrumentation and measurement, 44(4), 1995, pp. 853-859
Authors:
DEHE A
KROZER V
FRICKE K
KLINGBEIL H
BEILENHOFF K
HARTNAGEL HL
Citation: A. Dehe et al., INTEGRATED MICROWAVE-POWER SENSOR, Electronics Letters, 31(25), 1995, pp. 2187-2188
Authors:
SIGURDARDOTTIR A
KROZER V
HARTNAGEL HL
Citation: A. Sigurdardottir et al., MODELING AND DESIGN OF INAS ALSB-RESONANT TUNNELING DIODES/, Applied physics letters, 67(22), 1995, pp. 3313-3315
Authors:
GRUB A
KROZER V
SIMON A
HARTNAGEL HL
Citation: A. Grub et al., RELIABILITY AND MICRO-STRUCTURAL PROPERTIES OF GAAS SCHOTTKY DIODES FOR SUBMILLIMETER-WAVE APPLICATIONS, Solid-state electronics, 37(12), 1994, pp. 1925-1931
Authors:
KROZER V
GRUB A
Citation: V. Krozer et A. Grub, A NOVEL FABRICATION PROCESS AND ANALYTICAL MODEL FOR PT GAAS SCHOTTKY-BARRIER MIXER DIODES/, Solid-state electronics, 37(1), 1994, pp. 169-180
Authors:
JELENSKI A
GRUB A
KROZER V
HARTNAGEL HL
Citation: A. Jelenski et al., NEW APPROACH TO THE DESIGN AND THE FABRICATION OF THZ SCHOTTKY-BARRIER DIODES, IEEE transactions on microwave theory and techniques, 41(4), 1993, pp. 549-557
Authors:
GRUB A
SIMON A
KROZER V
HARTNAGEL HL
Citation: A. Grub et al., FUTURE-DEVELOPMENTS FOR TERAHERTZ SCHOTTKY-BARRIER MIXER DIODES, Archiv fur Elektrotechnik, 77(1), 1993, pp. 57-59
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