ACNP - Italian Periodicals Catalogue

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Results: 1-20 |

Results: 20

ALSB INAS HEMTS FOR LOW-VOLTAGE, HIGH-SPEED APPLICATIONS/

Authors: BOOS JB KRUPPA W BENNETT BR PARK D KIRCHOEFER SW BASS R DIETRICH HB

Citation: Jb. Boos et al., ALSB INAS HEMTS FOR LOW-VOLTAGE, HIGH-SPEED APPLICATIONS/, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1869-1875

ALSB INAS HEMTS USING MODULATION INAS(SI)-DOPING/

Authors: BOOS JB BENNETT BR KRUPPA W PARK D YANG MJ SHANABROOK BV

Citation: Jb. Boos et al., ALSB INAS HEMTS USING MODULATION INAS(SI)-DOPING/, Electronics Letters, 34(4), 1998, pp. 403-404

0.1-MU-M ALSB INAS HEMTS WITH INAS SUBCHANNEL

Authors: BOOS JB YANG MJ BENNETT BR PARK D KRUPPA W YANG CH BASS R

Citation: Jb. Boos et al., 0.1-MU-M ALSB INAS HEMTS WITH INAS SUBCHANNEL, Electronics Letters, 34(15), 1998, pp. 1525-1526

FABRICATION AND CHARACTERIZATION OF GAN FETS

Authors: BINARI SC KRUPPA W DIETRICH HB KELNER G WICKENDEN AE FREITAS JA

Citation: Sc. Binari et al., FABRICATION AND CHARACTERIZATION OF GAN FETS, Solid-state electronics, 41(10), 1997, pp. 1549-1554

LOW-FREQUENCY TRANSCONDUCTANCE DISPERSION IN INALAS INGAAS/INP HEMTS WITH SINGLE-RECESSED AND DOUBLE-RECESSED GATE STRUCTURES/

Authors: KRUPPA W BOOS JB

Citation: W. Kruppa et Jb. Boos, LOW-FREQUENCY TRANSCONDUCTANCE DISPERSION IN INALAS INGAAS/INP HEMTS WITH SINGLE-RECESSED AND DOUBLE-RECESSED GATE STRUCTURES/, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 687-692

ALGAN GAN HEMTS GROWN ON SIC SUBSTRATES

Authors: BINARI SC REDWING JM KELNER G KRUPPA W

Citation: Sc. Binari et al., ALGAN GAN HEMTS GROWN ON SIC SUBSTRATES, Electronics Letters, 33(3), 1997, pp. 242-243

MICROWAVE NOISE CHARACTERISTICS OF ALSB INAS HEMTS/

Authors: KRUPPA W BOOS JB PARK D BENNETT BR BASS R

Citation: W. Kruppa et al., MICROWAVE NOISE CHARACTERISTICS OF ALSB INAS HEMTS/, Electronics Letters, 33(12), 1997, pp. 1092-1093

ALSB INAS HEMTS WITH HIGH TRANSCONDUCTANCE AND NEGLIGIBLE KINK EFFECT/

Authors: BOOS JB KRUPPA W PARK D MOLNAR B BENNETT BR

Citation: Jb. Boos et al., ALSB INAS HEMTS WITH HIGH TRANSCONDUCTANCE AND NEGLIGIBLE KINK EFFECT/, Electronics Letters, 32(7), 1996, pp. 688-689

REDUCTION OF GATE CURRENT IN ALSB INAS HEMTS USING A DUAL-GATE DESIGN/

Authors: BOOS JB KRUPPA W PARK D

Citation: Jb. Boos et al., REDUCTION OF GATE CURRENT IN ALSB INAS HEMTS USING A DUAL-GATE DESIGN/, Electronics Letters, 32(17), 1996, pp. 1624-1625

SI SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH BREAKDOWN VOLTAGE/

Authors: HOBART KD KUB FJ PAPANICOLOAU NA KRUPPA W THOMPSON PE

Citation: Kd. Hobart et al., SI SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH BREAKDOWN VOLTAGE/, IEEE electron device letters, 16(5), 1995, pp. 205-207

DEEP-LEVEL TRAPPING IN ION-IMPLANTED INP JFETS

Authors: KRUPPA W BOOS JB

Citation: W. Kruppa et Jb. Boos, DEEP-LEVEL TRAPPING IN ION-IMPLANTED INP JFETS, Solid-state electronics, 38(10), 1995, pp. 1735-1741

SI SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE-POWER APPLICATIONS/

Authors: HOBART KD KUB FJ PAPANICOLOAU NA KRUPPA W THOMPSON PE

Citation: Kd. Hobart et al., SI SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE-POWER APPLICATIONS/, Journal of crystal growth, 157(1-4), 1995, pp. 215-221

EXAMINATION OF THE KINK EFFECT IN INALAS INGAAS/INP HEMTS USING SINUSOIDAL AND TRANSIENT EXCITATION/

Authors: KRUPPA W BOOS JB

Citation: W. Kruppa et Jb. Boos, EXAMINATION OF THE KINK EFFECT IN INALAS INGAAS/INP HEMTS USING SINUSOIDAL AND TRANSIENT EXCITATION/, I.E.E.E. transactions on electron devices, 42(10), 1995, pp. 1717-1723

LOW-FREQUENCY DISPERSION CHARACTERISTICS OF GAN HFETS

Authors: KRUPPA W BINARI SC DOVERSPIKE K

Citation: W. Kruppa et al., LOW-FREQUENCY DISPERSION CHARACTERISTICS OF GAN HFETS, Electronics Letters, 31(22), 1995, pp. 1951-1952

TRANSIENT-RESPONSE MEASUREMENT OF KINK EFFECT IN INALAS INGAAS/INP HEMTS/

Authors: KRUPPA W BOOS JB

Citation: W. Kruppa et Jb. Boos, TRANSIENT-RESPONSE MEASUREMENT OF KINK EFFECT IN INALAS INGAAS/INP HEMTS/, Electronics Letters, 30(4), 1994, pp. 368-369

0.2-MU-M ALSB INAS HEMTS WITH 5V GATE BREAKDOWN VOLTAGE/

Authors: BOOS JB KRUPPA W PARK D SHANABROOK BV BENNETT BR

Citation: Jb. Boos et al., 0.2-MU-M ALSB INAS HEMTS WITH 5V GATE BREAKDOWN VOLTAGE/, Electronics Letters, 30(23), 1994, pp. 1983-1984

LOW-TEMPERATURE CHARACTERISTICS OF 0.35-MU-M ALSB INAS HEMTS/

Authors: KRUPPA W BOOS JB

Citation: W. Kruppa et Jb. Boos, LOW-TEMPERATURE CHARACTERISTICS OF 0.35-MU-M ALSB INAS HEMTS/, Electronics Letters, 30(16), 1994, pp. 1358-1359

MICROWAVE PERFORMANCE OF GAN MESFETS

Authors: BINARI SC ROWLAND LB KRUPPA W KELNER G DOVERSPIKE K GASKILL DK

Citation: Sc. Binari et al., MICROWAVE PERFORMANCE OF GAN MESFETS, Electronics Letters, 30(15), 1994, pp. 1248-1249

LOW-FREQUENCY GAIN DISPERSION IN ION-IMPLANTED INP JFETS

Authors: KRUPPA W BOOS JB

Citation: W. Kruppa et Jb. Boos, LOW-FREQUENCY GAIN DISPERSION IN ION-IMPLANTED INP JFETS, Solid-state electronics, 36(10), 1993, pp. 1445-1453

IMPACT IONIZATION IN HIGH-OUTPUT-CONDUCTANCE REGION OF 0.5-MU-M ALSB INAS HEMTS (VOL 29, PG 1888, 1993)/

Authors: BOOS JB KRUPPA W SHANABROOK BV PARK D DAVIS JL DIETRICH HB

Citation: Jb. Boos et al., IMPACT IONIZATION IN HIGH-OUTPUT-CONDUCTANCE REGION OF 0.5-MU-M ALSB INAS HEMTS (VOL 29, PG 1888, 1993)/, Electronics Letters, 29(25), 1993, pp. 2231-2231

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