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Results:
1-16
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Results: 16
Authors:
KUMAR MJ
PATNAIK LM
NAG B
Citation: Mj. Kumar et al., FAULT-TOLERANT MESSAGE ROUTING IN THE EXTENDED HYPERCUBE, Journal of systems architecture, 44(9-10), 1998, pp. 691-702
Authors:
KUMAR MJ
Citation: Mj. Kumar, DEVROY,ANN, THE WASHINGTON-POST - 1948-1997, Harvard international journal of press/politics, 3(2), 1998, pp. 131-134
Authors:
PATRI VS
KUMAR MJ
Citation: Vs. Patri et Mj. Kumar, PROFILE DESIGN CONSIDERATIONS FOR MINIMIZING BASE TRANSIT-TIME IN SIGE HBTS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1725-1731
Authors:
KUMAR MJ
DATTA K
Citation: Mj. Kumar et K. Datta, OPTIMUM COLLECTOR WIDTH OF VLSI BIPOLAR-TRANSISTORS FOR MAXIMUM F(MAX) AT HIGH-CURRENT DENSITIES, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 903-905
Authors:
KUMAR MJ
DATTA K
Citation: Mj. Kumar et K. Datta, MILLERS APPROXIMATION IN VLSI AND POWER BIPOLAR-TRANSISTORS WITH REACH-THROUGH COLLECTORS, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2305-2307
Authors:
KUMAR MJ
PATNAIK LM
Citation: Mj. Kumar et Lm. Patnaik, MAPPING OF ARTIFICIAL NEURAL NETWORKS ONTO MESSAGE-PASSING SYSTEMS, IEEE transactions on systems, man and cybernetics. Part B. Cybernetics, 26(6), 1996, pp. 822-835
Authors:
DATTA K
KUMAR MJ
Citation: K. Datta et Mj. Kumar, C-JC AND THE OUTPUT CONDUCTANCE OF ADVANCED BIPOLAR JUNCTION TRANSISTORS UNDER NONLOCAL IMPACT IONIZATION CONDITIONS, Solid-state electronics, 39(12), 1996, pp. 1819-1821
Authors:
KUMAR MJ
CHAMBERLAIN SG
Citation: Mj. Kumar et Sg. Chamberlain, SELECTIVE REACTIVE ION ETCHING OF PECVD SILICON-NITRIDE OVER AMORPHOUS-SILICON IN CF4 H-2 AND NITROGEN-CONTAINING CF4/H-2 PLASMA GAS-MIXTURES/, Solid-state electronics, 39(1), 1996, pp. 33-37
Authors:
HAMBY AL
KUMAR MJ
Citation: Al. Hamby et Mj. Kumar, THE PRESIDENCY RESEARCH GROUP AND THE ARCHIVIST OF THE UNITED-STATES - DISCUSSION, PS, political science & politics, 28(4), 1995, pp. 778-785
Authors:
KUMAR MJ
VENKATESH S
KIERONSKA D
PATNAIK LM
Citation: Mj. Kumar et al., HIERARCHICAL DIRECTORY-BASED SHARED-MEMORY ARCHITECTURE, Computer journal, 38(3), 1995, pp. 207-216
Authors:
KUMAR MJ
ROULSTON DJ
Citation: Mj. Kumar et Dj. Roulston, OPTIMUM COLLECTOR EPI-THICKNESS OF ADVANCED BIPOLAR-TRANSISTORS FOR HIGH-SPEED AND HIGH-CURRENT OPERATION, Solid-state electronics, 37(11), 1994, pp. 1885-1887
Authors:
KUMAR MJ
KATARIA ND
SRIVASTAVA GP
Citation: Mj. Kumar et al., 10-GHZ CYLINDRICAL CAVITY RESONATOR FOR CHARACTERIZATION OF SURFACE-RESISTANCE OF HIGH-T-C SUPERCONDUCTING BULK AND THIN-FILMS, IEEE transactions on magnetics, 30(6), 1994, pp. 4605-4607
Authors:
KUMAR MJ
ROULSTON DJ
Citation: Mj. Kumar et Dj. Roulston, DESIGN TRADEOFFS FOR IMPROVED V-CE(SAT) VERSUS I-C OF BIPOLAR-TRANSISTORS UNDER FORCED GAIN CONDITIONS, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 398-402
Authors:
KUMAR MJ
ROULSTON DJ
Citation: Mj. Kumar et Dj. Roulston, MILLERS APPROXIMATION IN ADVANCED BIPOLAR-TRANSISTORS UNDER NONLOCAL IMPACT IONIZATION, CONDITIONS, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2471-2473
Authors:
KUMAR MJ
ROULSTON DJ
Citation: Mj. Kumar et Dj. Roulston, BASE ETCHED SELF-ALIGNED TRANSISTOR TECHNOLOGY FOR ADVANCED POLYEMITTER BIPOLAR-TRANSISTORS, Electronics Letters, 30(10), 1994, pp. 819-820
Authors:
KUMAR MJ
SADOVNIKOV AD
ROULSTON DJ
Citation: Mj. Kumar et al., COLLECTOR DESIGN TRADEOFFS FOR LOW-VOLTAGE APPLICATIONS OF ADVANCED BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1478-1483
Risultati:
1-16
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