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Results: 1-7 |
Results: 7

Authors: DARGYS A KUNDROTAS J
Citation: A. Dargys et J. Kundrotas, IMPACT IONIZATION OF EXCITONS BY HOT CARRIERS IN QUANTUM-WELLS, Semiconductor science and technology (Print), 13(11), 1998, pp. 1258-1261

Authors: CESNA A KUNDROTAS J DARGYS A
Citation: A. Cesna et al., PHOTOLUMINESCENCE TRANSIENTS DUE TO DONOR AND EXCITON AVALANCHE BREAKDOWN, Journal of luminescence, 78(2), 1998, pp. 157-166

Authors: DARGYS A KUNDROTAS J
Citation: A. Dargys et J. Kundrotas, PIEZOELECTRIC-INTERACTION-LIMITED CAPTURE PROCESS IN A(3)B(5) COMPOUNDS, Physica status solidi. b, Basic research, 200(2), 1997, pp. 509-518

Authors: DARGYS A KUNDROTAS J
Citation: A. Dargys et J. Kundrotas, DONOR AVALANCHE BREAKDOWN FIELD IN N-GAAS - EFFECT OF CONCENTRATION AND LATTICE TEMPERATURE, Solid-state electronics, 41(8), 1997, pp. 1185-1188

Authors: DARGYS A KUNDROTAS J CESNA A
Citation: A. Dargys et al., IMPACT NEUTRALIZATION OF D- IONS IN GAAS AND INP, Journal of applied physics, 82(3), 1997, pp. 1479-1481

Authors: KUNDROTAS J DARGYS A CESNA A
Citation: J. Kundrotas et al., THE HOT-ELECTRON DISTRIBUTION FUNCTION UNDER IMPURITY BREAKDOWN CONDITIONS, Physica status solidi. b, Basic research, 194(2), 1996, pp. 649-660

Authors: KUNDROTAS J DARGYS A CESNA A
Citation: J. Kundrotas et al., SHALLOW DONOR IMPACT IONIZATION IN N-INP AND N-GAAS - INFLUENCE OF DOPING AND COMPENSATION, Semiconductor science and technology, 11(5), 1996, pp. 692-696
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