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Results: 1-20 |
Results: 20
LITHOGRAPHY WITH 157 NM LASERS
Authors: BLOOMSTEIN TM HORN MW ROTHSCHILD M KUNZ RR PALMACCI ST GOODMAN RB
Citation: Tm. Bloomstein et al., LITHOGRAPHY WITH 157 NM LASERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2112-2116
PHOTOLITHOGRAPHY AT 0.10 AND 0.13 MU-M USING ARF EXCIMER-LASER LITHOGRAPHY IN COMBINATION WITH RESOLUTION ENHANCEMENT TECHNIQUES
Authors: CHAN M KUNZ RR DORAN SP ROTHSCHILD M
Citation: M. Chan et al., PHOTOLITHOGRAPHY AT 0.10 AND 0.13 MU-M USING ARF EXCIMER-LASER LITHOGRAPHY IN COMBINATION WITH RESOLUTION ENHANCEMENT TECHNIQUES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2404-2411
LITHOGRAPHY AT A WAVELENGTH OF 193 NM
Authors: ROTHSCHILD M FORTE AR KUNZ RR PALMATEER SC SEDLACEK JHC
Citation: M. Rothschild et al., LITHOGRAPHY AT A WAVELENGTH OF 193 NM, IBM journal of research and development, 41(1-2), 1997, pp. 49-55
PHOTORESISTS FOR 193-NM LITHOGRAPHY
Authors: ALLEN RD WALLRAFF GM HOFER DC KUNZ RR
Citation: Rd. Allen et al., PHOTORESISTS FOR 193-NM LITHOGRAPHY, IBM journal of research and development, 41(1-2), 1997, pp. 95-104
THIN-FILM IMAGING - PAST, PRESENT, PROGNOSIS
Authors: SEEGER DE LATULIPE DC KUNZ RR GARZA CM HANRATTY MA
Citation: De. Seeger et al., THIN-FILM IMAGING - PAST, PRESENT, PROGNOSIS, IBM journal of research and development, 41(1-2), 1997, pp. 105-118
HOW PRACTICAL IS 193 NM LITHOGRAPHY
Authors: ROTHSCHILD M BURNS JA CANN SG FORTE AR KEAST CL KUNZ RR PALMATEER SC SEDLACEK JHC UTTARO R GRENVILLE A CORLISS D
Citation: M. Rothschild et al., HOW PRACTICAL IS 193 NM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4157-4161
PLASMA-DEPOSITED SILYLATION RESIST FOR 193 NM LITHOGRAPHY
Authors: HORN MW MAXWELL BE GOODMAN RB KUNZ RR ERIKSEN LM
Citation: Mw. Horn et al., PLASMA-DEPOSITED SILYLATION RESIST FOR 193 NM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4207-4211
HIGH-RESOLUTION STUDIES OF CRYSTALLINE DAMAGE-INDUCED BY LAPPING AND SINGLE-POINT DIAMOND MACHINING OF SI(100)
Authors: KUNZ RR CLARK HR NITISHIN PM ROTHSCHILD M AHERN BS
Citation: Rr. Kunz et al., HIGH-RESOLUTION STUDIES OF CRYSTALLINE DAMAGE-INDUCED BY LAPPING AND SINGLE-POINT DIAMOND MACHINING OF SI(100), Journal of materials research, 11(5), 1996, pp. 1228-1237
DRY DEVELOPMENT OF SUB-0.25 MU-M FEATURES PATTERNED WITH 193 NM SILYLATION RESIST
Authors: PALMATEER SC FORTE AR KUNZ RR HORN MW
Citation: Sc. Palmateer et al., DRY DEVELOPMENT OF SUB-0.25 MU-M FEATURES PATTERNED WITH 193 NM SILYLATION RESIST, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1132-1136
PLASMA-DEPOSITED SILYLATION RESIST FOR 193 NM LITHOGRAPHY
Authors: HORN MW ROTHSCHILD M MAXWELL BE GOODMAN RB KUNZ RR ERIKSEN LM
Citation: Mw. Horn et al., PLASMA-DEPOSITED SILYLATION RESIST FOR 193 NM LITHOGRAPHY, Applied physics letters, 68(2), 1996, pp. 179-181
193-NM LITHOGRAPHY
Authors: ROTHSCHILD M FORTE AR HORN MW KUNZ RR PALMATEER SC SEDLACEK JHC
Citation: M. Rothschild et al., 193-NM LITHOGRAPHY, IEEE journal of selected topics in quantum electronics, 1(3), 1995, pp. 916-923
OBSERVATION OF A NANOCRYSTALLINE-TO-AMORPHOUS PHASE-TRANSITION IN LUMINESCENT POROUS SILICON
Authors: KUNZ RR NITISHIN PM CLARK HR ROTHSCHILD M AHERN B
Citation: Rr. Kunz et al., OBSERVATION OF A NANOCRYSTALLINE-TO-AMORPHOUS PHASE-TRANSITION IN LUMINESCENT POROUS SILICON, Applied physics letters, 67(12), 1995, pp. 1766-1768
APPLICATIONS OF LASERS IN MICROELECTRONICS AND MICROMECHANICS
Authors: KUNZ RR HORN MW BLOOMSTEIN TM EHRLICH DJ
Citation: Rr. Kunz et al., APPLICATIONS OF LASERS IN MICROELECTRONICS AND MICROMECHANICS, Applied surface science, 80, 1994, pp. 12-24
SINGLE-LAYER CHEMICALLY AMPLIFIED PHOTORESISTS FOR 193-NM LITHOGRAPHY
Authors: WALLRAFF GM ALLEN RD HINSBERG WD LARSON CF JOHNSON RD DIPIETRO R BREYTA G HACKER N KUNZ RR
Citation: Gm. Wallraff et al., SINGLE-LAYER CHEMICALLY AMPLIFIED PHOTORESISTS FOR 193-NM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2783-2788
ACID-CATALYZED SINGLE-LAYER RESISTS FOR ARF LITHOGRAPHY
Authors: KUNZ RR ALLEN RD HINSBERG WD WALLRAFF GM
Citation: Rr. Kunz et al., ACID-CATALYZED SINGLE-LAYER RESISTS FOR ARF LITHOGRAPHY, Optical engineering, 32(10), 1993, pp. 2363-2367
COMPARISON OF LIQUID-PHASE AND VAPOR-PHASE SILYLATION PROCESSES FOR 193-NM POSITIVE-TONE LITHOGRAPHY
Authors: HARTNEY MA KUNZ RR ERIKSEN LM LATULIPE DC
Citation: Ma. Hartney et al., COMPARISON OF LIQUID-PHASE AND VAPOR-PHASE SILYLATION PROCESSES FOR 193-NM POSITIVE-TONE LITHOGRAPHY, Optical engineering, 32(10), 1993, pp. 2382-2387
COMPARISON OF ETCHING TOOLS FOR RESIST PATTERN TRANSFER
Authors: HORN MW HARTNEY MA KUNZ RR
Citation: Mw. Horn et al., COMPARISON OF ETCHING TOOLS FOR RESIST PATTERN TRANSFER, Optical engineering, 32(10), 1993, pp. 2388-2394
NEW SINGLE-LAYER POSITIVE RESISTS FOR 193-NM AND 248-NM LITHOGRAPHY USING METHACRYLATE POLYMERS
Authors: ALLEN RD WALLRAFF GM HINSBERG WD CONLEY WE KUNZ RR
Citation: Rd. Allen et al., NEW SINGLE-LAYER POSITIVE RESISTS FOR 193-NM AND 248-NM LITHOGRAPHY USING METHACRYLATE POLYMERS, Solid state technology, 36(11), 1993, pp. 53
DESIGNING TOMORROWS PHOTORESISTS
Authors: WALLRAFF GM ALLEN RD HINSBERG WD SIMPSON LL KUNZ RR
Citation: Gm. Wallraff et al., DESIGNING TOMORROWS PHOTORESISTS, Chemtech, 23(4), 1993, pp. 22-30
RESIST ALTERNATIVES FOR SUB-0.35-MU-M LITHOGRAPHY BY USING HIGHLY ATTENUATED RADIATION
Authors: KUNZ RR HARTNEY MA ROTHSCHILD M
Citation: Rr. Kunz et al., RESIST ALTERNATIVES FOR SUB-0.35-MU-M LITHOGRAPHY BY USING HIGHLY ATTENUATED RADIATION, Applied optics, 32(34), 1993, pp. 7032-7035
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