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Results:
1-21
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Results: 21
Authors:
KUPHAL E
POCKER A
Citation: E. Kuphal et A. Pocker, PHASE-DIAGRAM FOR METALORGANIC VAPOR-PHASE EPITAXY OF STRAINED AND UNSTRAINED INGAASP INP/, JPN J A P 1, 37(2), 1998, pp. 632-637
Authors:
RESSEL P
LEECH PW
VEIT P
NEBAUER E
KLEIN A
KUPHAL E
REEVES GK
HARTNAGEL HL
Citation: P. Ressel et al., OHMIC PD ZN/AU/LAB6/AU CONTACTS ON P-TYPE IN0.53GA0.47AS - ELECTRICALAND METALLURGICAL PROPERTIES/, Journal of applied physics, 84(2), 1998, pp. 861-869
Authors:
VOLLRATH G
SCHLACHETZKI A
KUPHAL E
FIEDLER F
Citation: G. Vollrath et al., ION-BEAM-ETCHED LASER FACETS FOR INP-BASED LASERS, JPN J A P 1, 36(12A), 1997, pp. 7224-7229
Authors:
HUBNER B
VOLLRATH G
RIES R
GREUS C
JANNING H
RONNEBERG E
KUPHAL E
KEMPF B
GOBEL R
FIEDLER F
ZENGERLE R
BURKHARD H
Citation: B. Hubner et al., LASER-DIODES WITH INTEGRATED SPOT-SIZE TRANSFORMER AS LOW-COST OPTICAL TRANSMITTER ELEMENTS FOR TELECOMMUNICATIONS, IEEE journal of selected topics in quantum electronics, 3(6), 1997, pp. 1372-1383
Authors:
HANSMANN S
DAHLHOF K
KEMPF BE
GOBEL R
KUPHAL E
HUBNER B
BURKHARD H
KROST A
SCHATKE K
Citation: S. Hansmann et al., PROPERTIES OF LOSS-COUPLED DISTRIBUTED-FEEDBACK LASER ARRAYS FOR WAVELENGTH-DIVISION MULTIPLEXING SYSTEMS, Journal of lightwave technology, 15(7), 1997, pp. 1191-1197
Authors:
LINDNER A
VELLING P
PROST W
WIERSCH A
KUPHAL E
BURCHARD A
MAGERLE R
DEICHER M
TEGUDE FJ
Citation: A. Lindner et al., THE ROLE OF HYDROGEN IN LOW-TEMPERATURE MOVPE GROWTH AND CARBON DOPING OF IN0.53GA0.47AS FOR INP-BASED HBT, Journal of crystal growth, 170(1-4), 1997, pp. 287-291
Authors:
EISENBACH A
GOLDHORN A
KUPHAL E
MAUSE K
Citation: A. Eisenbach et al., MOVPE GROWTH FOR AN INTEGRATED INGAAS INP PIN-HBT RECEIVER USING ZN-DOPED P(+)-INGAAS LAYERS/, Journal of crystal growth, 170(1-4), 1997, pp. 451-455
Authors:
RESSEL P
PARK MH
WANG LC
KUPHAL E
Citation: P. Ressel et al., SHALLOW AND LOW-RESISTIVE CONTACTS TO P-IN0.53GA0.47AS BASED ON PD SBAND PD/GE METALLIZATIONS/, Electronics Letters, 32(18), 1996, pp. 1734-1735
Authors:
DEHE A
HARTNAGEL HL
PAVLIDIS D
HONG K
KUPHAL E
Citation: A. Dehe et al., PROPERTIES OF INGAAS INP THERMOELECTRIC AND SURFACE-BULK MICROMACHINED INFRARED-SENSORS/, Applied physics letters, 69(20), 1996, pp. 3039-3041
Authors:
RESSEL P
LEECH PW
REEVES GK
ZHOU W
KUPHAL E
Citation: P. Ressel et al., PD ZN/PD/AU AND PD/ZN/AU/LAB6/AU OHMIC CONTACTS TO P-TYPE IN0.53GA0.47AS/, Applied physics letters, 68(13), 1996, pp. 1841-1843
Authors:
KUPHAL E
BURKHARD H
POCKER A
Citation: E. Kuphal et al., COMPOSITION ANALYSIS AND DISTRIBUTED-FEEDBACK LASERS OF STRAINED INGAASP QUANTUM-WELLS WITH CONSTANT AS P RATIO/, JPN J A P 1, 34(7A), 1995, pp. 3486-3490
Authors:
HANSMANN S
HILLMER H
WALTER H
BURKHARD H
HUBNER B
KUPHAL E
Citation: S. Hansmann et al., VARIATION OF COUPLING-COEFFICIENTS BY SAMPLED GRATINGS IN COMPLEX COUPLED DISTRIBUTED-FEEDBACK LASERS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 341-345
Authors:
RESSEL P
STRUSNY H
VOGEL K
WURFL J
FRITZSCHE D
KRAUTLE H
KUPHAL E
MAUSE K
TRAPP M
RICHTER U
Citation: P. Ressel et al., OHMIC CONTACTS ON P-IN0.53GA0.47AS PREPARED BY ZN IMPLANTATION IRATE PD-BASED METALLIZATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2297-2305
Authors:
BARNARD WO
MYBURG G
AURET FD
POTGIETER JH
RESSEL P
KUPHAL E
Citation: Wo. Barnard et al., THE ROLE OF RU IN IMPROVING SCHOTTKY AND OHMIC CONTACTS TO INP, Vacuum, 46(8-10), 1995, pp. 893-897
Authors:
KUPHAL E
MAUSE K
MIETHE K
EISENBACH A
FIEDLER F
CORBET A
Citation: E. Kuphal et al., ELECTRON-DIFFUSION LENGTH IN INGAAS-ZN DERIVED FROM HETEROSTRUCTURE BIPOLAR-TRANSISTORS, Solid-state electronics, 38(4), 1995, pp. 795-799
Authors:
STEINHAGEN F
HILLMER H
LOSCH R
SCHLAPP W
WALTER H
GOBEL R
KUPHAL E
HARTNAGEL HL
BURKHARD H
Citation: F. Steinhagen et al., ALGAINAS INP 1.5 MU-M MQW DFB LASER-DIODES EXCEEDING 20 GHZ BANDWIDTH/, Electronics Letters, 31(4), 1995, pp. 274-275
Authors:
ZENGERLE R
HUBNER B
GREUS C
BURKHARD H
JANNING H
KUPHAL E
Citation: R. Zengerle et al., MONOLITHIC INTEGRATION OF DFB LASER WITH SPOT-SIZE TRANSFORMER FOR HIGHLY EFFICIENT LASER FIBER COUPLING, Electronics Letters, 31(14), 1995, pp. 1142-1143
Authors:
KUPHAL E
Citation: E. Kuphal, PHASE-DIAGRAM AND LPE GROWTH OF STRONGLY SN-DOPED AND TE-DOPED INGAAS, Applied physics. A, Solids and surfaces, 59(4), 1994, pp. 441-443
Authors:
EISENBACH A
KUPHAL E
MIETHE K
HARTNAGEL HL
Citation: A. Eisenbach et al., SN-DOPED INGAAS LAYERS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASEEPITAXY, Journal of crystal growth, 135(1-2), 1994, pp. 129-134
Authors:
MIETHE K
KUPHAL E
Citation: K. Miethe et E. Kuphal, SUDDEN SURFACE ROUGHENING FOLLOWED BY LEVELING OBSERVED IN SIMS ANALYSIS OF INP-CONTAINING III-V MULTILAYERS, Surface and interface analysis, 20(8), 1993, pp. 742-744
Authors:
KUPHAL E
POCKER A
EISENBACH A
Citation: E. Kuphal et al., RELATION BETWEEN PHOTOLUMINESCENCE WAVELENGTH AND LATTICE MISMATCH INMETALORGANIC VAPOR-PHASE EPITAXY INGAAS INP/, Journal of applied physics, 73(9), 1993, pp. 4599-4604
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