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Results: 1-10 |
Results: 10
Initial anomalous diffusion of boron atoms at low-temperature annealing
Authors: Saito, T Xia, JX Kim, R Aoki, T Kobayashi, H Furuta, Y Kamakura, Y
Citation: T. Saito et al., Initial anomalous diffusion of boron atoms at low-temperature annealing, ELEC C JP 2, 84(10), 2001, pp. 59-64
Impact excitation of carriers in diamond under extremely high electric fields
Authors: Watanabe, T Irie, M Teraji, T Ito, T Kamakura, Y Taniguchi, K
Citation: T. Watanabe et al., Impact excitation of carriers in diamond under extremely high electric fields, JPN J A P 2, 40(7B), 2001, pp. L715-L717
Carrier separation measurement of leakage current under prebreakdown in ultrathin SiO2 films
Authors: Uno, S Ishida, A Deguchi, K Kamakura, Y Taniguchi, K
Citation: S. Uno et al., Carrier separation measurement of leakage current under prebreakdown in ultrathin SiO2 films, J APPL PHYS, 89(12), 2001, pp. 8336-8338
Verification of hot hole scattering rates in silicon by quantum-yield experiment
Authors: Kamakura, Y Kawashima, I Deguchi, K Taniguchi, K
Citation: Y. Kamakura et al., Verification of hot hole scattering rates in silicon by quantum-yield experiment, J APPL PHYS, 88(10), 2000, pp. 5802-5809
Degradation of direct-tunneling gate oxide under hot-hole injection
Authors: Deguchi, K Ishida, A Uno, S Kamakura, Y Taniguchi, K
Citation: K. Deguchi et al., Degradation of direct-tunneling gate oxide under hot-hole injection, APPL PHYS L, 77(9), 2000, pp. 1384-1386
Studies of boron segregation to {311} defects in silicon-implanted silicon
Authors: Xia, J Saito, T Kim, R Aoki, T Kamakura, Y Taniguchi, K
Citation: J. Xia et al., Studies of boron segregation to {311} defects in silicon-implanted silicon, JPN J A P 1, 38(4B), 1999, pp. 2319-2323
Monte Carlo simulation of hot-electron-induced dielectric breakdown in thin silicon dioxide films
Authors: Kamakura, Y Ishida, A Taniguchi, K
Citation: Y. Kamakura et al., Monte Carlo simulation of hot-electron-induced dielectric breakdown in thin silicon dioxide films, PHYSICA B, 272(1-4), 1999, pp. 532-534
Boron segregation to extended defects induced by self-ion implantation into silicon
Authors: Xia, JX Saito, T Kim, R Aoki, T Kamakura, Y Taniguchi, K
Citation: Jx. Xia et al., Boron segregation to extended defects induced by self-ion implantation into silicon, J APPL PHYS, 85(11), 1999, pp. 7597-7603
A new soft breakdown model for thin thermal SiO2 films under constant current stress
Authors: Tomita, T Utsunomiya, H Sakura, T Kamakura, Y Taniguchi, K
Citation: T. Tomita et al., A new soft breakdown model for thin thermal SiO2 films under constant current stress, IEEE DEVICE, 46(1), 1999, pp. 159-164
Single electron transistors fabricated with AFM ultrafine nanooxidation process
Authors: Miyakawa, S Kim, R Shirakashi, J Taniguchi, K Matsumoto, K Kamakura, Y
Citation: S. Miyakawa et al., Single electron transistors fabricated with AFM ultrafine nanooxidation process, ELEC C JP 2, 81(10), 1998, pp. 12-18
Risultati: 1-10 |