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Results:
1-11
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Results: 11
Authors:
Kaneshiro, C
Hirai, R
Koh, K
Hohkawa, K
Citation: C. Kaneshiro et al., Fabrication of Si/LiNbO3 structure by using film bonding process, JPN J A P 1, 40(5B), 2001, pp. 3729-3733
Authors:
Koh, K
Miyadai, K
Aoki, Y
Hong, CL
Noge, S
Kaneshiro, C
Hohkawa, K
Citation: K. Koh et al., Bonding technology of semiconductor film on piezoelectric substrate using epitaxial lift-off technology, JPN J A P 1, 40(5B), 2001, pp. 3734-3739
Authors:
Hohkawa, K
Suda, T
Aoki, Y
Kaneshiro, C
Koh, K
Citation: K. Hohkawa et al., Simulation study on semiconductor coupled surface acoustic wave convolver through a multi-strip electrodes, JPN J A P 1, 40(5B), 2001, pp. 3740-3746
Authors:
Hong, CL
Koh, K
Kaneshiro, C
Aoki, Y
Hohkawa, K
Citation: Cl. Hong et al., Fabrication of surface acoustic wave-semiconductor coupled devices using epitaxial lift-off technology, JPN J A P 1, 39(6A), 2000, pp. 3666-3671
Authors:
Kaneshiro, C
Suda, T
Aoki, Y
Hong, C
Koh, K
Hohkawa, K
Citation: C. Kaneshiro et al., Photoresponse on surface acoustic wave devices with compound semiconductorand LiNbO3 structures, JPN J A P 1, 39(5B), 2000, pp. 3004-3009
Authors:
Okumura, T
Kaneshiro, C
Citation: T. Okumura et C. Kaneshiro, Ideal GaAs Schottky contacts fabricated by in situ photoelectrochemical etching and electrodeposition, ELEC C JP 2, 82(5), 1999, pp. 13-20
Authors:
Sato, T
Kaneshiro, C
Okada, H
Hasegawa, H
Citation: T. Sato et al., Formation of size- and position-controlled nanometer size Pt dots on GaAs and InP substrates by pulsed electrochemical deposition, JPN J A P 1, 38(4B), 1999, pp. 2448-2452
Authors:
Sato, T
Kaneshiro, C
Hasegawa, H
Citation: T. Sato et al., The strong correlation between interface microstructure and barrier heightin Pt/n-InP Schottky contacts formed by an in situ electrochemical process, JPN J A P 1, 38(2B), 1999, pp. 1103-1106
Authors:
Kaneshiro, C
Sato, T
Hasegawa, H
Citation: C. Kaneshiro et al., Electrochemical etching of indium phosphide surfaces studied by voltammetry and scanned probe microscopes, JPN J A P 1, 38(2B), 1999, pp. 1147-1152
Authors:
Hamamatsu, A
Kaneshiro, C
Fujikura, H
Hasegawa, H
Citation: A. Hamamatsu et al., Formation of < 001 >-aligned nano-scale pores on (001) n-InP surfaces by photoelectrochemical anodization in HCl, J ELEC CHEM, 473(1-2), 1999, pp. 223-229
Authors:
Hasegawa, H
Sato, T
Kaneshiro, C
Citation: H. Hasegawa et al., Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process, J VAC SCI B, 17(4), 1999, pp. 1856-1866
Risultati:
1-11
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