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Results:
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Results: 23
Authors:
Kaschner, A
Hoffmann, A
Thomsen, C
Citation: A. Kaschner et al., Raman scattering in resonance with acceptor-bound excitons in GaN, PHYS ST S-B, 223(3), 2001, pp. R11-R13
Authors:
Kaschner, A
Hoffmann, A
Thomsen, C
Citation: A. Kaschner et al., Resonant Raman scattering on free and bound excitons in GaN - art. no. 165314, PHYS REV B, 6416(16), 2001, pp. 5314
Authors:
Egorov, AY
Bernklau, D
Borchert, B
Illek, S
Livshits, D
Rucki, A
Schuster, M
Kaschner, A
Hoffmann, A
Dumitras, G
Amann, MC
Riechert, H
Citation: Ay. Egorov et al., Growth of high quality InGaAsN heterostructures and their laser application, J CRYST GR, 227, 2001, pp. 545-552
Authors:
Kaczmarczyk, G
Kaschner, A
Hoffmann, A
Thomsen, C
Citation: G. Kaczmarczyk et al., Temperature and pressure dependence of Mg local modes in GaN, APPL PHYS L, 78(2), 2001, pp. 198-200
Authors:
Kaschner, A
Luttgert, T
Born, H
Hoffmann, A
Egorov, AY
Riechert, H
Citation: A. Kaschner et al., Recombination mechanisms in GaInNAs/GaAs multiple quantum wells, APPL PHYS L, 78(10), 2001, pp. 1391-1393
Authors:
Liu, Q
Hoffmann, A
Kaschner, A
Thomsen, C
Christen, J
Veit, P
Clos, R
Citation: Q. Liu et al., Local stress analysis of epitaxial laterally-overgrown GaN, JPN J A P 2, 39(10A), 2000, pp. L958-L960
Authors:
Kaczmarczyk, G
Kaschner, A
Hoffmann, A
Thomsen, C
Citation: G. Kaczmarczyk et al., Impurity-induced modes of Mg, As, Si, and C in hexagonal and cubic GaN, PHYS REV B, 61(8), 2000, pp. 5353-5357
Authors:
Holst, J
Kaschner, A
Gfug, U
Hoffmann, A
Thomsen, C
Bertram, F
Riemann, T
Rudloff, D
Christen, J
Averbeck, R
Riechert, H
Heuken, M
Schwambera, M
Schon, O
Citation: J. Holst et al., Comparison of the mechanism of optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy and MOCVD, PHYS ST S-A, 180(1), 2000, pp. 327-332
Authors:
Kaschner, A
Hoffmann, A
Thomsen, C
Bottcher, T
Einfeldt, S
Hommel, D
Citation: A. Kaschner et al., Evidence for phase separation in InGaN by resonant Raman scattering, PHYS ST S-A, 179(1), 2000, pp. R4-R6
Authors:
Kaschner, A
Holst, J
Hoffmann, A
Broser, I
Fischer, P
Bertram, F
Riemann, T
Christen, J
Hiramatsu, K
Shibata, T
Sawaki, N
Citation: A. Kaschner et al., Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN, J LUMINESC, 87-9, 2000, pp. 1192-1195
Authors:
Kaschner, A
Hoffmann, A
Thomsen, C
Bertram, F
Riemann, T
Christen, J
Hiramatsu, K
Sone, H
Sawaki, N
Citation: A. Kaschner et al., Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples, APPL PHYS L, 76(23), 2000, pp. 3418-3420
Authors:
Kaschner, A
Strassburg, M
Hoffmann, A
Thomsen, C
Bartels, M
Lischka, K
Schikora, D
Citation: A. Kaschner et al., Temporal evolution of resonant Raman-scattering in ZnCdSe quantum dots, APPL PHYS L, 76(19), 2000, pp. 2662-2664
Authors:
Kaczmarczyk, G
Kaschner, A
Reich, S
Hoffmann, A
Thomsen, C
As, DJ
Lima, AP
Schikora, D
Lischka, K
Averbeck, R
Riechert, H
Citation: G. Kaczmarczyk et al., Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations, APPL PHYS L, 76(15), 2000, pp. 2122-2124
Authors:
Steude, G
Meyer, BK
Goldner, A
Hoffmann, A
Kaschner, A
Bechstedt, F
Amano, H
Akasaki, I
Citation: G. Steude et al., Strain modification of GaN in AlGaN/GaN epitaxial films, JPN J A P 2, 38(5A), 1999, pp. L498-L500
Authors:
Bertram, F
Riemann, T
Christen, J
Kaschner, A
Hoffmann, A
Hiramatsu, K
Shibata, T
Sawaki, N
Citation: F. Bertram et al., Epitaxial lateral overgrowth of GaN structures: spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy, MAT SCI E B, 59(1-3), 1999, pp. 117-121
Authors:
Hoffmann, A
Holst, J
Kaschner, A
Siegle, H
Christen, J
Fischer, P
Bertram, F
Hiramatsu, K
Citation: A. Hoffmann et al., Impact of the ZnO buffer on the optical properties of GaN: time resolved micro-photoluminescence, MAT SCI E B, 59(1-3), 1999, pp. 163-167
Authors:
Kaschner, A
Kaczmarczyk, G
Hoffmann, A
Thomsen, C
Birkle, U
Einfeldt, S
Hommel, D
Citation: A. Kaschner et al., Defect complexes in highly Mg-doped GaN studied by Raman spectroscopy, PHYS ST S-B, 216(1), 1999, pp. 551-555
Authors:
Holst, J
Kaschner, A
Hoffmann, A
Fischer, P
Bertram, F
Riemann, T
Christen, J
Hiramatsu, K
Shibata, T
Sawaki, N
Citation: J. Holst et al., Time-resolved microphotoluminescence of epitaxial laterally overgrown GaN, APPL PHYS L, 75(23), 1999, pp. 3647-3649
Authors:
Bertram, F
Riemann, T
Christen, J
Kaschner, A
Hoffmann, A
Thomsen, C
Hiramatsu, K
Shibata, T
Sawaki, N
Citation: F. Bertram et al., Strain relaxation and strong impurity incorporation in epitaxial laterallyovergrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy, APPL PHYS L, 74(3), 1999, pp. 359-361
Authors:
Kaschner, A
Siegle, H
Kaczmarczyk, G
Strassburg, M
Hoffmann, A
Thomsen, C
Birkle, U
Einfeldt, S
Hommel, D
Citation: A. Kaschner et al., Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy, APPL PHYS L, 74(22), 1999, pp. 3281-3283
Authors:
Kaschner, A
Hoffmann, A
Thomsen, C
Bertram, F
Riemann, T
Christen, J
Hiramatsu, K
Shibata, T
Sawaki, N
Citation: A. Kaschner et al., Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN, APPL PHYS L, 74(22), 1999, pp. 3320-3322
Authors:
Liu, QKK
Hoffmann, A
Siegle, H
Kaschner, A
Thomsen, C
Christen, J
Bertram, F
Citation: Qkk. Liu et al., Stress analysis of selective epitaxial growth of GaN, APPL PHYS L, 74(21), 1999, pp. 3122-3124
Raman scattering from defects in GaN: The question of vibrational or electronic scattering mechanism
Authors:
Siegle, H
Kaschner, A
Hoffmann, A
Broser, I
Thomsen, C
Einfeldt, S
Hommel, D
Citation: H. Siegle et al., Raman scattering from defects in GaN: The question of vibrational or electronic scattering mechanism, PHYS REV B, 58(20), 1998, pp. 13619-13626
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