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Results:
1-8
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Results: 8
Authors:
Wisitsora-at, A
Kang, WP
Davidson, JL
Kerns, DV
Kerns, SE
Citation: A. Wisitsora-at et al., Diamond emitter arrays with uniform self-aligned gate built from silicon-on-insulator wafer, J VAC SCI B, 19(3), 2001, pp. 971-974
Authors:
Salame, C
Hoffmann, A
Mialhe, P
Charles, JP
Kerns, DV
Kerns, SE
Citation: C. Salame et al., Size effect on SEB cross-section of VDMOSFETs, RADIAT EFF, 152(3), 2000, pp. 191-200
Circuit technique for threshold voltage stabilization using substrate biasin total dose environments
Authors:
Shreedhara, JK
Barnaby, HJ
Bhuva, BL
Kerns, DV
Kerns, SE
Citation: Jk. Shreedhara et al., Circuit technique for threshold voltage stabilization using substrate biasin total dose environments, IEEE NUCL S, 47(6), 2000, pp. 2557-2560
Authors:
Lahbabi, M
Ahaitouf, A
Abarkan, E
Fliyou, M
Hoffmann, A
Charles, JP
Bhuva, BL
Kerns, SE
Kerns, DV
Citation: M. Lahbabi et al., Analyses of electroluminescence spectra of silicon junctions in avalanche breakdown using an indirect interband recombination model, APPL PHYS L, 77(20), 2000, pp. 3182-3184
Authors:
de la Bardonnie, M
Jiang, D
Kerns, SE
Kerns, DV
Mialhe, P
Charles, JP
Hoffman, A
Citation: M. De La Bardonnie et al., On the aging of avalanche light emission from silicon junctions, IEEE DEVICE, 46(6), 1999, pp. 1234-1239
Authors:
Akil, N
Kerns, SE
Kerns, DV
Hoffmann, A
Charles, JP
Citation: N. Akil et al., A multimechanism model for photon generation by silicon junctions in avalanche breakdown, IEEE DEVICE, 46(5), 1999, pp. 1022-1028
Authors:
Kerns, DV
Barnaby, HJ
Kerns, SE
Citation: Dv. Kerns et al., Threshold voltage stabilization in radiation environments, IEEE NUCL S, 45(6), 1998, pp. 3175-3178
Authors:
Kerns, DV
Kang, WP
Davidson, JL
Zhou, Q
Gurbuz, Y
Kerns, SE
Citation: Dv. Kerns et al., Total-dose radiation-hard diamond-based hydrogen sensor, IEEE NUCL S, 45(6), 1998, pp. 2799-2804
Risultati:
1-8
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