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Results: 1-11 |
Results: 11
A study of the electrical and optical properties of Si delta-doped GaAs layers grown by MBE on a (111)A GaAs surface misoriented toward the [2(1)over-bar(1)over-bar] direction
Authors: Galiev, GB Mokerov, VG Lyapin, ER Saraikin, VV Khabarov, YV
Citation: Gb. Galiev et al., A study of the electrical and optical properties of Si delta-doped GaAs layers grown by MBE on a (111)A GaAs surface misoriented toward the [2(1)over-bar(1)over-bar] direction, SEMICONDUCT, 35(4), 2001, pp. 409-414
Effect of misorientation angle on the photoluminescence spectra of Si (delta)-doped GaAs (111)A layers grown by molecular beam epitaxy
Authors: Galiev, GB Mokerov, VG Khabarov, YV
Citation: Gb. Galiev et al., Effect of misorientation angle on the photoluminescence spectra of Si (delta)-doped GaAs (111)A layers grown by molecular beam epitaxy, DOKL PHYS, 46(2), 2001, pp. 88-91
Low-temperature photoluminescence and X-ray diffractometry study of InxGa1-xAs quantum wells
Authors: Evstigneev, SV Imamov, RM Lomov, AA Sadof'ev, YG Khabarov, YV Chuev, MA Shipitsin, DS
Citation: Sv. Evstigneev et al., Low-temperature photoluminescence and X-ray diffractometry study of InxGa1-xAs quantum wells, SEMICONDUCT, 34(6), 2000, pp. 693-699
Electric field effect on photoluminescence spectra of high-density two-dimensional electron gas in N-AlGaAs/GaAs/AlGaAs heterostructures
Authors: Guk, AV Velikovskii, LE Kaminskii, VE Mokerov, VG Fedorov, YV Khabarov, YV
Citation: Av. Guk et al., Electric field effect on photoluminescence spectra of high-density two-dimensional electron gas in N-AlGaAs/GaAs/AlGaAs heterostructures, DOKL PHYS, 45(9), 2000, pp. 435-438
Influence of growth conditions in the case of molecular-beam epitaxy on photoluminescence spectra of GaAs/InAs/GaAs heterostructures with quantum dots near their initiation threshold
Authors: Mokerov, VG Fedorov, YV Guk, AV Khabarov, YV Pak, KS Danilochkin, AV
Citation: Vg. Mokerov et al., Influence of growth conditions in the case of molecular-beam epitaxy on photoluminescence spectra of GaAs/InAs/GaAs heterostructures with quantum dots near their initiation threshold, DOKL PHYS, 45(10), 2000, pp. 512-514
Optical and electrical properties of the InAs/GaAs modulation-doped superlattices for InAs-layer thicknesses below and near the quantum-dot-formationthreshold
Authors: Mokerov, VG Fedorov, YV Guk, AV Pak, KS Khabarov, YV Danilochkin, AV
Citation: Vg. Mokerov et al., Optical and electrical properties of the InAs/GaAs modulation-doped superlattices for InAs-layer thicknesses below and near the quantum-dot-formationthreshold, DOKL PHYS, 45(10), 2000, pp. 523-527
Properties of (111)A and (111)B GaAs molecular-beam epitaxy
Authors: Galiev, GB Mokerov, VG Volkov, VY Imamov, RM Slepnev, YV Khabarov, YV
Citation: Gb. Galiev et al., Properties of (111)A and (111)B GaAs molecular-beam epitaxy, J COMMUN T, 44(11), 1999, pp. 1256-1261
Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations
Authors: Galiev, GB Mokerov, VG Slepnev, YV Khabarov, YV Lomov, AA Imamov, RM
Citation: Gb. Galiev et al., Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations, TECH PHYS, 44(7), 1999, pp. 801-803
Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers
Authors: Mokerov, VG Galiev, GB Slepnev, YV Khabarov, YV
Citation: Vg. Mokerov et al., Influence of crystal orientation of the growth surface due to molecular beam epitaxy on the optical properties of Si-doped GaAs layers, SEMICONDUCT, 32(11), 1998, pp. 1175-1178
Transport Properties and photoluminescence of the Two-Dimensional ElectronGas at the pseudomorphic quantum wells N-AlGaAs/InGaAs/GaAs
Authors: Mokerov, VG Fedorov, YV Guk, AV Khabarov, YV
Citation: Vg. Mokerov et al., Transport Properties and photoluminescence of the Two-Dimensional ElectronGas at the pseudomorphic quantum wells N-AlGaAs/InGaAs/GaAs, DOKL AKAD N, 362(3), 1998, pp. 335-338
Photoluminescence spectroscopy of quasi-two-dimensional electron gas at a delta doped GaAs (100) layers
Authors: Mokerov, VG Fedorov, YV Guk, AV Khabarov, YV
Citation: Vg. Mokerov et al., Photoluminescence spectroscopy of quasi-two-dimensional electron gas at a delta doped GaAs (100) layers, DOKL AKAD N, 362(1), 1998, pp. 40-43
Risultati: 1-11 |