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Results:
1-14
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Results: 14
Authors:
Stoger, M
Schattschneider, P
Schlosser, V
Schneider, R
Kirmse, H
Neumann, W
Citation: M. Stoger et al., TEM and EELS microanalysis of pc-Si thin film solar cells deposited by means of HWCVD, SOL EN MAT, 70(1), 2001, pp. 39-47
Authors:
Muller-Kirsch, L
Schliwa, A
Stier, O
Heitz, R
Kirmse, H
Neumann, W
Bimberg, D
Citation: L. Muller-kirsch et al., State filling in type II quantum dots, PHYS ST S-B, 224(2), 2001, pp. 349-352
Authors:
Muller-Kirsch, L
Heitz, R
Pohl, UW
Bimberg, D
Hausler, I
Kirmse, H
Neumann, W
Citation: L. Muller-kirsch et al., Temporal evolution of GaSb/GaAs quantum dot formation, APPL PHYS L, 79(7), 2001, pp. 1027-1029
Authors:
Muller-Kirsch, L
Heitz, R
Schliwa, A
Stier, O
Bimberg, D
Kirmse, H
Neumann, W
Citation: L. Muller-kirsch et al., Many-particle effects in type II quantum dots, APPL PHYS L, 78(10), 2001, pp. 1418-1420
Authors:
Kirmse, H
Neumann, W
Wiebach, T
Kohler, R
Scheerschmidt, K
Conrad, D
Citation: H. Kirmse et al., Computer-aided analysis of TEM images of CdSe/ZnSe quantum dots, MAT SCI E B, 69, 2000, pp. 361-366
Authors:
Scheerschmidt, K
Conrad, D
Kirmse, H
Schneider, R
Neumann, W
Citation: K. Scheerschmidt et al., Electron microscope characterization of CdSe/ZnSe quantum dots based on molecular dynamics structure relaxations, ULTRAMICROS, 81(3-4), 2000, pp. 289-300
Authors:
Steimetz, E
Wehnert, T
Kirmse, H
Poser, F
Zettler, JT
Neumann, W
Richter, W
Citation: E. Steimetz et al., Optimizing the growth procedure for InAs quantum dot stacks by optical in situ techniques, J CRYST GR, 221, 2000, pp. 592-598
Authors:
Muller-Kirsch, L
Pohl, UW
Heitz, R
Kirmse, H
Neumann, W
Bimberg, D
Citation: L. Muller-kirsch et al., Thin GaSb insertions and quantum dot formation in GaAs by MOCVD, J CRYST GR, 221, 2000, pp. 611-615
Authors:
Hatami, F
Muller, U
Kissel, H
Braune, K
Blum, RP
Rogaschewski, S
Niehus, H
Kirmse, H
Neumann, W
Schmidbauer, M
Kohler, R
Masselink, WT
Citation: F. Hatami et al., Planar ordering of InP quantum dots on (100)In0.48Ga0.52P, J CRYST GR, 216(1-4), 2000, pp. 26-32
Authors:
Walther, C
Bollmann, J
Kissel, H
Kirmse, H
Neumann, W
Masselink, WT
Citation: C. Walther et al., Characterization of electron trap states due to InAs quantum dots in GaAs, APPL PHYS L, 76(20), 2000, pp. 2916-2918
Authors:
Schneider, R
Kirmse, H
Hahnert, I
Neumann, W
Citation: R. Schneider et al., High-resolution analytical transmission electron microscopy of semiconductor quantum structures, FRESEN J AN, 365(1-3), 1999, pp. 217-220
Authors:
Walther, C
Bollmann, J
Kissel, H
Kirmse, H
Neumann, W
Masselink, WT
Citation: C. Walther et al., Non-exponential capture of electrons in GaAs with embedded InAs quantum dots, PHYSICA B, 274, 1999, pp. 971-975
Authors:
Kirmse, H
Schneider, R
Scheerschmidt, K
Conrad, D
Neumann, W
Citation: H. Kirmse et al., TEM characterization of self-organized CdSe/ZnSe quantum dots, J MICROSC O, 194, 1999, pp. 183-191
Authors:
Kappelt, M
Turck, V
Bimberg, D
Kirmse, H
Hahnert, I
Neumann, W
Citation: M. Kappelt et al., InGaAs and InAsP V-groove quantum wires using arsenic/phosphorus exchange preparation, J CRYST GR, 195(1-4), 1998, pp. 552-557
Risultati:
1-14
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