AAAAAA

   
Results: 1-23 |
Results: 23
Continuous-wave operation of InGaN multiple-quantum-well laser diodes on copper substrates obtained by laser liftoff
Authors: Kneissl, M Wong, WS Treat, DW Teepe, M Miyashita, N Johnson, NM
Citation: M. Kneissl et al., Continuous-wave operation of InGaN multiple-quantum-well laser diodes on copper substrates obtained by laser liftoff, IEEE S T QU, 7(2), 2001, pp. 188-191
Spectroscopy and modeling of carrier recombination in III-N heterostructures
Authors: Sweeney, PM Cheung, MC Chen, F Cartwright, AN Bour, DP Kneissl, M
Citation: Pm. Sweeney et al., Spectroscopy and modeling of carrier recombination in III-N heterostructures, PHYS ST S-B, 228(1), 2001, pp. 115-119
Influence of microstructure on the carrier concentration of Mg-doped GaN films
Authors: Romano, LT Kneissl, M Northrup, JE Van de Walle, CG Treat, DW
Citation: Lt. Romano et al., Influence of microstructure on the carrier concentration of Mg-doped GaN films, APPL PHYS L, 79(17), 2001, pp. 2734-2736
Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates
Authors: Wong, WS Kneissl, M Mei, P Treat, DW Teepe, M Johnson, NM
Citation: Ws. Wong et al., Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates, APPL PHYS L, 78(9), 2001, pp. 1198-1200
The integration of InxGa1-xN multiple-quantum-well laser diodes with copper substrates by laser lift-off
Authors: Wong, WS Kneissl, M Mei, P Treat, DW Teepe, M Johnson, NM
Citation: Ws. Wong et al., The integration of InxGa1-xN multiple-quantum-well laser diodes with copper substrates by laser lift-off, JPN J A P 2, 39(12A), 2000, pp. L1203-L1205
CW operation of InGaN MQW laser diodes
Authors: Bour, DP Kneissl, M Van de Walle, CG Northrup, J Romano, LT Teepe, M Wood, R Schmidt, T Johnson, NM
Citation: Dp. Bour et al., CW operation of InGaN MQW laser diodes, PHYS ST S-A, 180(1), 2000, pp. 139-147
Performance and optical gain characteristic of InGaN MQW laser diodes
Authors: Kneissl, M Van de Walle, CG Bour, DP Romano, LT Goddard, LL Master, CP Northrup, JE Johnson, NM
Citation: M. Kneissl et al., Performance and optical gain characteristic of InGaN MQW laser diodes, J LUMINESC, 87-9, 2000, pp. 135-139
Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing
Authors: Goddard, LL Kneissl, M Bour, DP Johnson, NM
Citation: Ll. Goddard et al., Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing, J APPL PHYS, 88(7), 2000, pp. 3820-3823
Design and performance of asymmetric waveguide nitride laser diodes
Authors: Bour, DP Kneissl, M Van de Walle, CG Evans, GA Romano, LT Northrup, J Teepe, M Wood, R Schmidt, T Schoffberger, S Johnson, NM
Citation: Dp. Bour et al., Design and performance of asymmetric waveguide nitride laser diodes, IEEE J Q EL, 36(2), 2000, pp. 184-191
InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metalbonding and laser lift-off
Authors: Wong, WS Sands, T Cheung, NW Kneissl, M Bour, DP Mei, P Romano, LT Johnson, NM
Citation: Ws. Wong et al., InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metalbonding and laser lift-off, APPL PHYS L, 77(18), 2000, pp. 2822-2824
Performance and degradation of continuous-wave InGaN multiple-quantum-welllaser diodes on epitaxially laterally overgrown GaN substrates
Authors: Kneissl, M Bour, DP Romano, L Van de Walle, CG Northrup, JE Wong, WS Treat, DW Teepe, M Schmidt, T Johnson, NM
Citation: M. Kneissl et al., Performance and degradation of continuous-wave InGaN multiple-quantum-welllaser diodes on epitaxially laterally overgrown GaN substrates, APPL PHYS L, 77(13), 2000, pp. 1931-1933
Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser
Authors: Hofstetter, D Romano, LT Paoli, TL Bour, DP Kneissl, M
Citation: D. Hofstetter et al., Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser, APPL PHYS L, 76(17), 2000, pp. 2337-2339
MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes
Authors: Bour, DP Kneissl, M Hofstetter, D Romano, LT McCluskey, M Van de Walle, CG Krusor, BS Dunnrowicz, C Donaldson, R Walker, J Johnson, NM
Citation: Dp. Bour et al., MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes, MAT SCI E B, 59(1-3), 1999, pp. 33-38
Extremely fast ambipolar diffusion in n-i-p-i doping superlattices investigated by an all-optical pump-and-probe technique
Authors: Streb, D Vitzethum, M Kiesel, P Dohler, GH Kneissl, M
Citation: D. Streb et al., Extremely fast ambipolar diffusion in n-i-p-i doping superlattices investigated by an all-optical pump-and-probe technique, SUPERLATT M, 25(1-2), 1999, pp. 21-27
Human immunodeficiency virus infection, inducible nitric oxide synthase expression, and microglial activation: Pathogenetic relationship to the acquired immunodeficiency syndrome dementia complex
Authors: Rostasy, K Monti, L Yiannoutsos, C Kneissl, M Bell, J Kemper, TL Hedreen, JC Navia, BA
Citation: K. Rostasy et al., Human immunodeficiency virus infection, inducible nitric oxide synthase expression, and microglial activation: Pathogenetic relationship to the acquired immunodeficiency syndrome dementia complex, ANN NEUROL, 46(2), 1999, pp. 207-216
DX centers in AlGaN
Authors: McCluskey, MD van de Walle, CG Johnson, NM Bour, DP Kneissl, M
Citation: Md. Mccluskey et al., DX centers in AlGaN, INT J MOD B, 13(11), 1999, pp. 1363-1378
Room-temperature continuous-wave operation of InGaN multiple quantum well laser diodes with an asymmetric waveguide structure
Authors: Kneissl, M Bour, DP Van de Walle, CG Romano, LT Northrup, JE Wood, RM Teepe, M Schmidt, T Johnson, NM
Citation: M. Kneissl et al., Room-temperature continuous-wave operation of InGaN multiple quantum well laser diodes with an asymmetric waveguide structure, PHYS ST S-A, 176(1), 1999, pp. 49-52
Identification, characterization and chromosomal localization of the cognate human and murine DBF4 genes
Authors: Lepke, M Putter, V Staib, C Kneissl, M Berger, C Hoehn, K Nanda, I Schmid, M Grummt, F
Citation: M. Lepke et al., Identification, characterization and chromosomal localization of the cognate human and murine DBF4 genes, MOL G GENET, 262(2), 1999, pp. 220-229
Identification and characterization of MmORC4 and MmORC5, two subunits of the mouse origin of replication recognition complex
Authors: Springer, J Kneissl, M Putter, V Grummt, F
Citation: J. Springer et al., Identification and characterization of MmORC4 and MmORC5, two subunits of the mouse origin of replication recognition complex, CHROMOSOMA, 108(4), 1999, pp. 243-249
Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure
Authors: Kneissl, M Bour, DP Van de Walle, CG Romano, LT Northrup, JE Wood, RM Teepe, M Johnson, NM
Citation: M. Kneissl et al., Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure, APPL PHYS L, 75(4), 1999, pp. 581-583
Phase separation in InGaN multiple quantum wells annealed at high nitrogenpressures
Authors: Romano, LT McCluskey, MD Van de Walle, CG Northrup, JE Bour, DP Kneissl, M Suski, T Jun, J
Citation: Lt. Romano et al., Phase separation in InGaN multiple quantum wells annealed at high nitrogenpressures, APPL PHYS L, 75(25), 1999, pp. 3950-3952
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
Authors: Wong, WS Sands, T Cheung, NW Kneissl, M Bour, DP Mei, P Romano, LT Johnson, NM
Citation: Ws. Wong et al., Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off, APPL PHYS L, 75(10), 1999, pp. 1360-1362
Stripe-width dependence of threshold current for gain-guided AlGaInN laserdiodes
Authors: Bour, DP Kneissl, M Romano, LT Donaldson, RM Dunnrowicz, CJ Johnson, NM Evans, GA
Citation: Dp. Bour et al., Stripe-width dependence of threshold current for gain-guided AlGaInN laserdiodes, APPL PHYS L, 74(3), 1999, pp. 404-406
Risultati: 1-23 |