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Results: 1-8 |
Results: 8
Effect of backgating on the field distribution in planar thin-film GaAs structures
Authors: Gorev, NB Kodzhespirova, IF Kovalenko, YA Privalov, EN Prokhorov, EF
Citation: Nb. Gorev et al., Effect of backgating on the field distribution in planar thin-film GaAs structures, MICROELEC J, 32(12), 2001, pp. 979-982
Effect of the impact ionization of deep traps on the field distribution inplanar thin-film GaAs structures
Authors: Prokhorov, EF Gonzalez-Hernandez, J Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation: Ef. Prokhorov et al., Effect of the impact ionization of deep traps on the field distribution inplanar thin-film GaAs structures, J APPL PHYS, 89(1), 2001, pp. 327-331
Anomalous behavior of the pulse transfer characteristic of a selectively doped AlxGa1-xAs/GaAs heterostructure containing deep traps
Authors: Prokhorov, E Gonzalez-Hernandez, J Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation: E. Prokhorov et al., Anomalous behavior of the pulse transfer characteristic of a selectively doped AlxGa1-xAs/GaAs heterostructure containing deep traps, MICROEL ENG, 51-2, 2000, pp. 165-170
Sidegating mechanism as a function of the sidegate-to-channel spacing
Authors: Prokhorov, EF Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation: Ef. Prokhorov et al., Sidegating mechanism as a function of the sidegate-to-channel spacing, SOL ST ELEC, 44(10), 2000, pp. 1857-1860
Nonmonotony of the extrinsic photoconductivity of n-type GaAs thin-film structures under backgating
Authors: Prokhorov, EF Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation: Ef. Prokhorov et al., Nonmonotony of the extrinsic photoconductivity of n-type GaAs thin-film structures under backgating, MICROELEC J, 31(4), 2000, pp. 267-269
Nondestructive technique for the characterization of deep traps at interlayer interfaces in thin-film multilayer semiconductor structures
Authors: Gonzalez-Hernandez, J Prokhorov, E Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation: J. Gonzalez-hernandez et al., Nondestructive technique for the characterization of deep traps at interlayer interfaces in thin-film multilayer semiconductor structures, J VAC SCI B, 17(5), 1999, pp. 2357-2360
Low-frequency capacitance-voltage characterization of deep levels in film buffer layer substrate GaAs structures
Authors: Kostylev, SA Prokhorov, EF Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation: Sa. Kostylev et al., Low-frequency capacitance-voltage characterization of deep levels in film buffer layer substrate GaAs structures, SOL ST ELEC, 43(1), 1999, pp. 169-176
Capacitance-voltage characteristics of selectively doped AlxGa1-xAs/GaAs heterostructures containing deep traps
Authors: Prokhorov, EF Gorev, NB Kodzhespirova, IF Kovalenko, YA
Citation: Ef. Prokhorov et al., Capacitance-voltage characteristics of selectively doped AlxGa1-xAs/GaAs heterostructures containing deep traps, J APPL PHYS, 86(1), 1999, pp. 532-536
Risultati: 1-8 |