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Results:
1-14
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Results: 14
Authors:
Oshima, M
Mano, T
Mizuguchi, M
Ono, K
Fujioka, H
Akinaga, H
Koguchi, N
Citation: M. Oshima et al., Properties of semiconductor quantum dots and magnetic nanocrystals grown by molecular beam epitaxy, J KOR PHYS, 38(4), 2001, pp. 396-400
Authors:
Mano, T
Tsukamoto, S
Koguchi, N
Fujioka, H
Oshima, M
Lee, CD
Leem, JY
Lee, HJ
Noh, SK
Citation: T. Mano et al., Transmission electron microscope study of InGaAs quantum dots fabricated by SPEED method, J KOR PHYS, 38(4), 2001, pp. 401-404
Authors:
Watanabe, K
Koguchi, N
Ishige, K
Lee, CD
Leem, JY
Lee, HJ
Noh, SK
Citation: K. Watanabe et al., High-quality GaAs quantum dots grown using a modified droplet epitaxy technique, J KOR PHYS, 38(1), 2001, pp. 25-28
Authors:
Mano, T
Tsukamoto, S
Koguchi, N
Fujioka, H
Oshima, M
Citation: T. Mano et al., Indium segregation in the fabrication of InGaAs concave disks by heterogeneous droplet epitaxy, J CRYST GR, 227, 2001, pp. 1069-1072
Authors:
Watanabe, K
Tsukamoto, S
Gotoh, Y
Koguchi, N
Citation: K. Watanabe et al., Photoluminescence studies of GaAs quantum dots grown by droplet epitaxy, J CRYST GR, 227, 2001, pp. 1073-1077
Authors:
Mano, T
Watanabe, K
Tsukamoto, S
Imanaka, Y
Takamasu, T
Fujioka, H
Kido, G
Oshima, M
Koguchi, N
Citation: T. Mano et al., InAs quantum dots growth by modified droplet epitaxy using sulfur termination, JPN J A P 1, 39(7B), 2000, pp. 4580-4583
Authors:
Shimoda, M
Tsukamoto, S
Ohno, T
Koguchi, N
Sugiyama, M
Maeyama, S
Watanabe, Y
Citation: M. Shimoda et al., Stoichiometry study of S-terminated GaAs(001)-(2 x 6) surface with synchrotron radiation photoelectron spectroscopy, JPN J A P 1, 39(7A), 2000, pp. 3943-3946
Authors:
Watanabe, K
Koguchi, N
Gotoh, Y
Citation: K. Watanabe et al., Fabrications of GaAs quantum dots by modified droplet epitaxy, JPN J A P 2, 39(2A), 2000, pp. L79-L81
Authors:
Tsukamoto, S
Koguchi, N
Citation: S. Tsukamoto et N. Koguchi, Magic numbers in Ga clusters on GaAs (001) surface, J CRYST GR, 209(2-3), 2000, pp. 258-262
Authors:
Mano, T
Watanabe, K
Tsukamoto, S
Fujioka, H
Oshima, M
Koguchi, N
Citation: T. Mano et al., Fabrication of InGaAs quantum dots on GaAs(001) by droplet epitaxy, J CRYST GR, 209(2-3), 2000, pp. 504-508
Authors:
Mano, T
Watanabe, K
Tsukamoto, S
Koguchi, N
Fujioka, H
Oshima, M
Lee, CD
Leem, JY
Lee, HJ
Noh, SK
Citation: T. Mano et al., Nanoscale InGaAs concave disks fabricated by heterogeneous droplet epitaxy, APPL PHYS L, 76(24), 2000, pp. 3543-3545
Authors:
Mano, T
Watanabe, K
Tsukamoto, S
Fujioka, H
Oshima, M
Koguchi, N
Citation: T. Mano et al., New self-organized growth method for InGaAs quantum dots on GaAs(001) using droplet epitaxy, JPN J A P 2, 38(9AB), 1999, pp. L1009-L1011
Authors:
Tsukamoto, S
Koguchi, N
Citation: S. Tsukamoto et N. Koguchi, Atomic-level in situ real-space observation of Ga adatoms on GaAs(001)(2 x4)-As surface during molecular beam epitaxy growth, J CRYST GR, 202, 1999, pp. 118-123
Authors:
Lee, CD
Park, C
Lee, HJ
Lee, KS
Park, SJ
Park, CG
Noh, SK
Koguchi, N
Citation: Cd. Lee et al., Fabrication of self-assembled GaAs/AlGaAs quantum dots by low-temperature droplet epitaxy, JPN J A P 1, 37(12B), 1998, pp. 7158-7160
Risultati:
1-14
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