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Results: 1-25/29
Authors:
Ueno, K
Saiki, K
Koma, A
Citation: K. Ueno et al., Fabrication of GaAs quantum dots on a bilayer-GaSe terminated Si(111) substrate, JPN J A P 1, 40(3B), 2001, pp. 1888-1891
Authors:
Ichikawa, H
Shimada, T
Koma, A
Citation: H. Ichikawa et al., Ordered growth and crystal structure of Alq(3) on alkali halide surfaces, JPN J A P 2, 40(3A), 2001, pp. L225-L227
Authors:
Nishita, K
Koma, A
Saiki, K
Citation: K. Nishita et al., Growth of NiO films on various GaAs faces via electron bombardment evaporation, J VAC SCI A, 19(5), 2001, pp. 2282-2286
Authors:
Iizumi, K
Ueno, K
Saiki, K
Koma, A
Citation: K. Iizumi et al., Electron-energy-loss spectroscopy of C-60 monolayer films on active and inactive surfaces, APPL SURF S, 169, 2001, pp. 142-146
Authors:
Nishita, K
Saiki, K
Koma, A
Citation: K. Nishita et al., Initial oxidation process of Mg films characterized by AES, EELS, and UPS, APPL SURF S, 169, 2001, pp. 180-183
Authors:
Ueno, K
Uchino, Y
Iizumi, K
Saiki, K
Koma, A
Citation: K. Ueno et al., Electron-energy-loss spectroscopy of KxC60 and K-halides: comparison in the K-3p excitation region, APPL SURF S, 169, 2001, pp. 184-187
Authors:
Kiguchi, M
Saiki, K
Sasaki, T
Iwasawa, Y
Koma, A
Citation: M. Kiguchi et al., Heteroepitaxial growth of LiCl on Cu(001) - art. no. 205418, PHYS REV B, 6320(20), 2001, pp. 5418
Authors:
Shimada, T
Cho, KA
Koma, A
Citation: T. Shimada et al., Control of initial growth processes of epitaxial films using pulsed molecular beams - art. no. 153404, PHYS REV B, 6315(15), 2001, pp. 3404
Authors:
Murata, H
Kataoka, K
Koma, A
Citation: H. Murata et al., Scanning tunneling microscope images of locally modulated structures in layered materials, MoS2(0001) and MoSe2(0001), induced by impurity atoms, SURF SCI, 478(3), 2001, pp. 131-144
Authors:
Shimada, T
Nakatani, H
Ueno, K
Koma, A
Kuninobu, Y
Sawamura, M
Nakamura, E
Citation: T. Shimada et al., Epitaxial growth and electronic structure of a C-60 derivative prepared byusing a solution spray technique, J APPL PHYS, 90(1), 2001, pp. 209-212
Authors:
Uchiyama, H
Tanaka, N
Zama, H
Tajima, S
Morishita, T
Saiki, K
Koma, A
Citation: H. Uchiyama et al., X-ray photoemission spectroscopy study for the flat YBa2Cu3Oy single-crystal surface prepared by chemical etching and O-2 annealing, JPN J A P 1, 39(3A), 2000, pp. 1320-1322
Authors:
Asaoka, H
Saiki, J
Koma, A
Yamamoto, H
Citation: H. Asaoka et al., Low-temperature epitaxial growth of SrO on hydrogen-passivated Si (100) surface, PHYSICA B, 284, 2000, pp. 2101-2102
Authors:
Wake, T
Saiki, K
Koma, A
Citation: T. Wake et al., Epitaxial growth and surface structure of cuprous halide thin films, J VAC SCI A, 18(2), 2000, pp. 536-542
Authors:
Iizumi, K
Uchino, Y
Ueno, K
Koma, A
Saiki, K
Inada, Y
Nagai, K
Iwasa, Y
Mitani, T
Citation: K. Iizumi et al., Investigation of epitaxial arrangement and electronic structure of a La@ C-82 film grown on an MoS2 surface, PHYS REV B, 62(12), 2000, pp. 8281-8285
Authors:
Uchiyama, H
Hu, WZ
Yamamoto, A
Tajima, S
Saiki, K
Koma, A
Citation: H. Uchiyama et al., Photoemission study of electronic states in HgBa2CuO4+delta with various doping levels, PHYS REV B, 62(1), 2000, pp. 615-621
Authors:
Asaoka, H
Saiki, K
Koma, A
Yamamoto, H
Citation: H. Asaoka et al., Heteroepitaxial growth of SrO on hydrogen-terminated Si(100) surface, THIN SOL FI, 369(1-2), 2000, pp. 273-276
Authors:
Shimada, T
Hashimoto, R
Koide, J
Kamimuta, Y
Koma, A
Citation: T. Shimada et al., Surface migration dynamics of a planar organic molecule studied by pulsed molecular beam scattering, SURF SCI, 470(1-2), 2000, pp. L52-L56
Authors:
Kiguchi, M
Saiki, K
Koma, A
Citation: M. Kiguchi et al., Effects of anharmonicity of ionic bonds on the lattice distortion at the interface of alkali halide heterostructures, SURF SCI, 470(1-2), 2000, pp. 81-88
Authors:
Saiki, K
Kono, T
Ueno, K
Koma, A
Citation: K. Saiki et al., Highly sensitive reflection high-energy electron diffraction measurement by use of micro-channel imaging plate, REV SCI INS, 71(9), 2000, pp. 3478-3479
Authors:
Hayashi, T
Ueno, K
Saiki, K
Koma, A
Citation: T. Hayashi et al., Investigation of the growth mechanism of an InSe epitaxial layer on a MoS2substrate, J CRYST GR, 219(1-2), 2000, pp. 115-122
Authors:
Ueno, K
Sasaki, K
Saiki, K
Koma, A
Citation: K. Ueno et al., A novel method to fabricate a molecular quantum structure: Selective growth of C-60 on layered material heterostructures, JPN J A P 1, 38(1B), 1999, pp. 511-514
Authors:
Saiki, K
Nishita, K
Ariga, Y
Koma, A
Citation: K. Saiki et al., Growth of Mg films on H-terminated Si (111), J VAC SCI A, 17(5), 1999, pp. 2911-2914
Authors:
Shimada, T
Koide, J
Cho, KA
Koma, A
Citation: T. Shimada et al., Velocity distribution of organic molecules emitted from effusion cells measured by time-of-flight technique, J VAC SCI A, 17(2), 1999, pp. 615-618
Authors:
Murata, H
Koma, A
Citation: H. Murata et A. Koma, Modulated STM images of ultrathin MoSe2 films grown on MoS2(0001) studied by STM/STS, PHYS REV B, 59(15), 1999, pp. 10327-10334
Authors:
Shimada, T
Nagahori, H
Koma, A
Citation: T. Shimada et al., Monolayer films of liquid crystal 12CB grown by molecular beam deposition on cleaved surfaces of alkali halides, SURF SCI, 423(2-3), 1999, pp. L285-L290