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Results: 1-25 | 26-30
Results: 1-25/30
Study on the lateral growth of silicon films from metal solutions with temperature gradient
Authors: Kita, K Wen, CJ Otomo, J Yamada, K Komiyama, H Takahashi, H
Citation: K. Kita et al., Study on the lateral growth of silicon films from metal solutions with temperature gradient, J CRYST GR, 234(1), 2002, pp. 153-158
TiN films prepared by flow modulation chemical vapor deposition using TiCl4 and NH3
Authors: Hamamura, H Komiyama, H Shimogaki, Y
Citation: H. Hamamura et al., TiN films prepared by flow modulation chemical vapor deposition using TiCl4 and NH3, JPN J A P 1, 40(3A), 2001, pp. 1517-1521
Heteroepitaxial growth of a zeolite
Authors: Okubo, T Wakihara, T Plevert, J Nair, S Tsapatsis, M Ogawa, Y Komiyama, H Yoshimura, M Davis, M
Citation: T. Okubo et al., Heteroepitaxial growth of a zeolite, ANGEW CHEM, 40(6), 2001, pp. 1069
Internal microstructure and formation mechanism of surface protrusions in Pb-Ti-Nb-O thin films prepared by MOCVD
Authors: Liu, XD Funakubo, H Noda, S Komiyama, H
Citation: Xd. Liu et al., Internal microstructure and formation mechanism of surface protrusions in Pb-Ti-Nb-O thin films prepared by MOCVD, CHEM VAPOR, 7(6), 2001, pp. 253-259
Zone-defined growth of multicrystalline silicon film from metal-silicon solution
Authors: Kita, K Yamatsugu, H Wen, CJ Komiyama, H Yamada, K
Citation: K. Kita et al., Zone-defined growth of multicrystalline silicon film from metal-silicon solution, SOL EN MAT, 65(1-4), 2001, pp. 465-470
Structure and morphology of self-assembled 3-mercaptopropyltrimethoxysilane layers on silicon oxide
Authors: Hu, MH Noda, S Okubo, T Yamaguchi, Y Komiyama, H
Citation: Mh. Hu et al., Structure and morphology of self-assembled 3-mercaptopropyltrimethoxysilane layers on silicon oxide, APPL SURF S, 181(3-4), 2001, pp. 307-316
Nucleation and growth of Cu films during the initial stage of chemical vapor deposition
Authors: Chae, YK Komiyama, H
Citation: Yk. Chae et H. Komiyama, Nucleation and growth of Cu films during the initial stage of chemical vapor deposition, J APPL PHYS, 90(7), 2001, pp. 3610-3613
Assessment of energy systems by using biomass plantation
Authors: Komiyama, H Mitsumori, T Yamaji, K Yamada, K
Citation: H. Komiyama et al., Assessment of energy systems by using biomass plantation, FUEL, 80(5), 2001, pp. 707-715
Influence of deposition temperature on the microstructure of Pb-Ti-Nb-O thin films by metallorganic chemical vapor deposition
Authors: Liu, XD Funakubo, H Noda, S Komiyama, H
Citation: Xd. Liu et al., Influence of deposition temperature on the microstructure of Pb-Ti-Nb-O thin films by metallorganic chemical vapor deposition, J ELCHEM SO, 148(3), 2001, pp. C227-C230
Fabrication of silicon thin films with defects below detection limit of electron spin resonance for solar cells by high-speed zone-melting crystallization of amorphous silicon
Authors: Ihara, M Yokoyama, S Yokoyama, C Izumi, K Komiyama, H
Citation: M. Ihara et al., Fabrication of silicon thin films with defects below detection limit of electron spin resonance for solar cells by high-speed zone-melting crystallization of amorphous silicon, APPL PHYS L, 79(23), 2001, pp. 3809-3811
Kinetics of GaAs metalorganic chemical vapor deposition studied by numerical analysis based on experimental reaction data
Authors: Sugiyama, M Feron, O Sudo, S Nakano, Y Tada, K Komiyama, H Shimogaki, Y
Citation: M. Sugiyama et al., Kinetics of GaAs metalorganic chemical vapor deposition studied by numerical analysis based on experimental reaction data, JPN J A P 1, 39(4A), 2000, pp. 1642-1649
Reaction analysis of aluminum chemical vapor deposition from dimethyl-aluminum-hydride using tubular reactor and Fourier-transform infrared spectroscopy: Theoretical process optimization procedure (1)
Authors: Sugiyama, M Itoh, H Aoyama, J Komiyama, H Shimogaki, Y
Citation: M. Sugiyama et al., Reaction analysis of aluminum chemical vapor deposition from dimethyl-aluminum-hydride using tubular reactor and Fourier-transform infrared spectroscopy: Theoretical process optimization procedure (1), JPN J A P 1, 39(3A), 2000, pp. 1074-1079
Elementary surface reaction simulation of aluminum chemical vapor deposition from dimethylaluminumhydride based on ab initio calculations: Theoretical process optimization procedure (2)
Authors: Sugiyama, M Nakajima, T Tanaka, T Itoh, H Aoyama, J Egashira, Y Yamashita, K Komiyama, H Shimogaki, Y
Citation: M. Sugiyama et al., Elementary surface reaction simulation of aluminum chemical vapor deposition from dimethylaluminumhydride based on ab initio calculations: Theoretical process optimization procedure (2), JPN J A P 1, 39(12A), 2000, pp. 6501-6512
Decrease in deposition rate and improvement of step coverage by CF4 addition to plasma-enhanced chemical vapor deposition of silicon oxide films
Authors: Lim, SW Shimogaki, Y Nakano, Y Tada, K Komiyama, H
Citation: Sw. Lim et al., Decrease in deposition rate and improvement of step coverage by CF4 addition to plasma-enhanced chemical vapor deposition of silicon oxide films, JPN J A P 1, 39(1), 2000, pp. 330-336
Case studies of the impact of landscape changes on weather modification inwestern Australia in summer
Authors: Li, DY Komiyama, H Kurihara, K Sato, YS
Citation: Dy. Li et al., Case studies of the impact of landscape changes on weather modification inwestern Australia in summer, J GEO RES-A, 105(D10), 2000, pp. 12303-12315
CVD reactor design using three-dimensional computer simulation - Gas outlet effect
Authors: Kunishige, M Sugawara, K Chae, YK Shimogaki, Y Komiyama, H Egashira, Y
Citation: M. Kunishige et al., CVD reactor design using three-dimensional computer simulation - Gas outlet effect, KAG KOG RON, 26(6), 2000, pp. 758-762
Modeling of hot wall type CVD reactor for prototype design
Authors: Ohki, K Egashira, Y Komiyama, H
Citation: K. Ohki et al., Modeling of hot wall type CVD reactor for prototype design, KAG KOG RON, 26(6), 2000, pp. 798-803
A model for predicting preferential orientation of chemical-vapor-deposited films
Authors: Nishioka, K Mizutani, N Komiyama, H
Citation: K. Nishioka et al., A model for predicting preferential orientation of chemical-vapor-deposited films, J ELCHEM SO, 147(4), 2000, pp. 1440-1442
Morphology evolution of SiO2 films deposited by tetraethylorthosilicate/O-3 atmospheric-pressure chemical vapor deposition on thermal SiO2
Authors: Tsukamoto, K Cheng, DG Komiyama, H Nishimoto, Y Tokumasu, N Maeda, K
Citation: K. Tsukamoto et al., Morphology evolution of SiO2 films deposited by tetraethylorthosilicate/O-3 atmospheric-pressure chemical vapor deposition on thermal SiO2, JPN J A P 2, 38(1AB), 1999, pp. L68-L70
Effect of underlayers on the morphology and orientation of aluminum films prepared by chemical vapor deposition using dimethylaluminumhydride
Authors: Sugiyama, M Iino, T Itoh, H Aoyama, J Komiyama, H Shimogaki, Y
Citation: M. Sugiyama et al., Effect of underlayers on the morphology and orientation of aluminum films prepared by chemical vapor deposition using dimethylaluminumhydride, JPN J A P 2, 38(12B), 1999, pp. L1528-L1531
Rapid water exchange between the lagoon and the open ocean at Majuro Atolldue to wind, waves, and tide
Authors: Kraines, SB Suzuki, A Yanagi, T Isobe, M Guo, XY Komiyama, H
Citation: Sb. Kraines et al., Rapid water exchange between the lagoon and the open ocean at Majuro Atolldue to wind, waves, and tide, J GEO RES-O, 104(C7), 1999, pp. 15635-15653
Tetraethylorthosilicate vapor treatment for eliminating surface sensitivity in tetraethylorthosilicate/O-3 atmospheric-pressure chemical vapor deposition
Authors: Tsukamoto, K Cheng, DG Komiyama, H Nishimoto, Y Tokumasu, N Maeda, K
Citation: K. Tsukamoto et al., Tetraethylorthosilicate vapor treatment for eliminating surface sensitivity in tetraethylorthosilicate/O-3 atmospheric-pressure chemical vapor deposition, EL SOLID ST, 2(1), 1999, pp. 24-26
Experimental and numerical analysis of rapid reaction to initiate the radical chain reactions in WSix CVD (vol 320, pg 151, 1998)
Authors: Chae, YK Egashira, Y Shimogaki, Y Sugawara, K Komiyama, H
Citation: Yk. Chae et al., Experimental and numerical analysis of rapid reaction to initiate the radical chain reactions in WSix CVD (vol 320, pg 151, 1998), THIN SOL FI, 340(1-2), 1999, pp. 317-317
Thermal desorption spectra of SiO2 films deposited on Si and on thermal SiO2 by tetraethylorthosilicate/O-3 atmospheric-pressure chemical vapor deposition
Authors: Cheng, DG Tsukamoto, K Komiyama, H Nishimoto, Y Tokumasu, N Maeda, K
Citation: Dg. Cheng et al., Thermal desorption spectra of SiO2 films deposited on Si and on thermal SiO2 by tetraethylorthosilicate/O-3 atmospheric-pressure chemical vapor deposition, J APPL PHYS, 85(10), 1999, pp. 7140-7145
Effect of the steam-methane ratio on reactions occurring on Ni/yttria-stabilized zirconia cermet anodes used in solid-oxide fuel cells
Authors: Ihara, M Yokoyama, C Abudula, A Kato, R Komiyama, H Yamada, K
Citation: M. Ihara et al., Effect of the steam-methane ratio on reactions occurring on Ni/yttria-stabilized zirconia cermet anodes used in solid-oxide fuel cells, J ELCHEM SO, 146(7), 1999, pp. 2481-2487
Risultati: 1-25 | 26-30