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Results: 1-19 |
Results: 19
Crystal structure of bis(trimethylamine) dichlorodeuteroalane, [N(CH3)(3)](2)Cl2DAl
Authors: Torrison, L Groy, TL Kouvetakis, J
Citation: L. Torrison et al., Crystal structure of bis(trimethylamine) dichlorodeuteroalane, [N(CH3)(3)](2)Cl2DAl, Z KRIST-NEW, 216(3), 2001, pp. 467-468
Structural properties of heteroepitaxial germanium-carbon alloys grown on Si (100)
Authors: Smith, DJ Todd, M McMurran, J Kouvetakis, J
Citation: Dj. Smith et al., Structural properties of heteroepitaxial germanium-carbon alloys grown on Si (100), PHIL MAG A, 81(6), 2001, pp. 1613-1624
Synthesis of new azidoalanes with heterocyclic molecular structures
Authors: Kouvetakis, J McMurran, J Steffek, G Groy, TL Hubbard, JL Torrison, L
Citation: J. Kouvetakis et al., Synthesis of new azidoalanes with heterocyclic molecular structures, MAIN GR MET, 24(2), 2001, pp. 77-84
Synthesis and structural properties of the binary framework C-N compounds of Be, Mg, Al, and Tl
Authors: Williams, D Pleune, B Leinenweber, K Kouvetakis, J
Citation: D. Williams et al., Synthesis and structural properties of the binary framework C-N compounds of Be, Mg, Al, and Tl, J SOL ST CH, 159(1), 2001, pp. 244-250
Elastic properties of nanocrystalline zirconium-silicon-boron thin films
Authors: Chirita, M Xia, H Sooryakumar, R Tolle, JB Torres, VM Wilkens, BJ Smith, DJ Kouvetakis, J Tsong, IST
Citation: M. Chirita et al., Elastic properties of nanocrystalline zirconium-silicon-boron thin films, J APPL PHYS, 89(8), 2001, pp. 4349-4353
Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure
Authors: Nielsen, JF Pelz, JP Hibino, H Hu, CW Tsong, IST Kouvetakis, J
Citation: Jf. Nielsen et al., Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure, APPL PHYS L, 79(23), 2001, pp. 3857-3859
Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates
Authors: Roucka, R Tolle, J Smith, DJ Crozier, P Tsong, IST Kouvetakis, J
Citation: R. Roucka et al., Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates, APPL PHYS L, 79(18), 2001, pp. 2880-2882
Simple chemical routes to diamond-cubic germanium-tin alloys
Authors: Taraci, J Tolle, J Kouvetakis, J McCartney, MR Smith, DJ Menendez, J Santana, MA
Citation: J. Taraci et al., Simple chemical routes to diamond-cubic germanium-tin alloys, APPL PHYS L, 78(23), 2001, pp. 3607-3609
Synthesis of silicon-based infrared semiconductors in the Ge-Sn system using molecular chemistry methods
Authors: Taraci, J Zollner, S McCartney, MR Menendez, J Santana-Aranda, MA Smith, DJ Haaland, A Tutukin, AV Gundersen, G Wolf, G Kouvetakis, J
Citation: J. Taraci et al., Synthesis of silicon-based infrared semiconductors in the Ge-Sn system using molecular chemistry methods, J AM CHEM S, 123(44), 2001, pp. 10980-10987
The centrosymmetric dimer of dichloro(trimethylsiloxy)aluminium
Authors: Kouvetakis, J Ritter, C Groy, TL
Citation: J. Kouvetakis et al., The centrosymmetric dimer of dichloro(trimethylsiloxy)aluminium, ACT CRYST C, 56, 2000, pp. E564-E564
2,4,6-Tris[2-(trimethylsilyl)ethynyl]-1,3,5-triazene: a novel precursor toC-N two-dimensional structures
Authors: Kouvetakis, J Groy, TL
Citation: J. Kouvetakis et Tl. Groy, 2,4,6-Tris[2-(trimethylsilyl)ethynyl]-1,3,5-triazene: a novel precursor toC-N two-dimensional structures, ACT CRYST C, 56, 2000, pp. E533-E533
Synthesis of Cl2InN3, Br2InN3, and related adducts
Authors: Steffek, C McMurran, J Pleune, B Kouvetakis, J Concolino, TE Rheingold, AL
Citation: C. Steffek et al., Synthesis of Cl2InN3, Br2InN3, and related adducts, INORG CHEM, 39(7), 2000, pp. 1615
Synthesis and structures of heterocycle azidogallanes [(CH3)ClGaN3](4) and[(CH3)BrGaN3](3) en route to [(CH3)HGaN3](x): An inorganic precursor to GaN
Authors: Kouvetakis, J McMurran, J Steffek, C Groy, TL Hubbard, JL
Citation: J. Kouvetakis et al., Synthesis and structures of heterocycle azidogallanes [(CH3)ClGaN3](4) and[(CH3)BrGaN3](3) en route to [(CH3)HGaN3](x): An inorganic precursor to GaN, INORG CHEM, 39(17), 2000, pp. 3805-3809
Synthesis of LiBC4N4, BC3N3, and related C-N compounds of boron: New precursors to light element ceramics
Authors: Williams, D Pleune, B Kouvetakis, J Williams, MD Andersen, RA
Citation: D. Williams et al., Synthesis of LiBC4N4, BC3N3, and related C-N compounds of boron: New precursors to light element ceramics, J AM CHEM S, 122(32), 2000, pp. 7735-7741
Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition
Authors: Nesting, DC Kouvetakis, J Hearne, S Chason, E Tsong, IST
Citation: Dc. Nesting et al., Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition, J VAC SCI A, 17(3), 1999, pp. 891-894
Molecular structure of CH(GeBr3)(3) determined by gas electron diffractionand ab initio calculations: steric congestion in tri- and tetra-germylmethanes
Authors: Haaland, A Shorohov, DJ Volden, HV McMurran, J Kouvetakis, J
Citation: A. Haaland et al., Molecular structure of CH(GeBr3)(3) determined by gas electron diffractionand ab initio calculations: steric congestion in tri- and tetra-germylmethanes, J MOL STRUC, 509(1-3), 1999, pp. 29-34
Morphological control and structural characteristics of crystalline Ge-C systems: Carbide nanorods, quantum dots, and epitaxial heterostructures
Authors: Nesting, DC Kouvetakis, J Smith, DJ
Citation: Dc. Nesting et al., Morphological control and structural characteristics of crystalline Ge-C systems: Carbide nanorods, quantum dots, and epitaxial heterostructures, APPL PHYS L, 74(7), 1999, pp. 958-960
Development of a low-temperature GaN chemical vapor deposition process based on a single molecular source H2GaN3
Authors: McMurran, J Kouvetakis, J Smith, DJ
Citation: J. Mcmurran et al., Development of a low-temperature GaN chemical vapor deposition process based on a single molecular source H2GaN3, APPL PHYS L, 74(6), 1999, pp. 883-885
H2GaN3 and derivatives: A facile method to gallium nitride
Authors: McMurran, J Dai, D Balasubramanian, K Steffek, C Kouvetakis, J Hubbard, JL
Citation: J. Mcmurran et al., H2GaN3 and derivatives: A facile method to gallium nitride, INORG CHEM, 37(26), 1998, pp. 6638-6644
Risultati: 1-19 |