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Results: 1-25/76
Authors:
Fujita, M
Ushigome, R
Baba, T
Matsutani, A
Koyama, F
Iga, K
Citation: M. Fujita et al., GaInAsP microcylinder (microdisk) injection laser with AlInAs(O-x) claddings, JPN J A P 1, 40(9A), 2001, pp. 5338-5339
Authors:
Onishi, Y
Koyama, F
Iga, K
Citation: Y. Onishi et al., Design and fabrication process of optically pumped GaInAsP/InP stripe laser with resonant pumping for high-power operation, JPN J A P 1, 40(8), 2001, pp. 4920-4921
Authors:
Arai, M
Nishiyama, N
Azuchi, M
Matsutani, A
Koyama, F
Iga, K
Citation: M. Arai et al., Monolithic formation of metal organic chemical vapor deposition grown multi-wavelength vertical cavities with highly strained GaInAs/GaAs quantum wells on GaAs (311)B, JPN J A P 1, 40(6A), 2001, pp. 4056-4057
Authors:
Matsutani, A
Ohtsuki, H
Muta, S
Koyama, F
Iga, K
Citation: A. Matsutani et al., Mass effect of etching gases in vertical and smooth dry etching of InP, JPN J A P 1, 40(3A), 2001, pp. 1528-1529
Authors:
Kondo, T
Schlenker, D
Miyamoto, T
Chen, ZB
Kawaguchi, M
Gouardes, E
Koyama, F
Iga, K
Citation: T. Kondo et al., Lasing characteristics of 1.2 mu m highly strained GaInAs/GaAs quantum well lasers, JPN J A P 1, 40(2A), 2001, pp. 467-471
Authors:
Sekiguchi, S
Kimura, T
Okazaki, G
Miyamoto, T
Koyama, F
Iga, K
Citation: S. Sekiguchi et al., Tunnel junction for long-wavelength vertical-cavity surface-emitting lasers, JPN J A P 1, 40(10), 2001, pp. 5909-5913
Authors:
Murakami, A
Sekiguchi, S
Sakaguchi, T
Miyamoto, T
Koyama, F
Iga, K
Citation: A. Murakami et al., Proposal of optically pumped tunable surface emitting laser, JPN J A P 2, 40(9AB), 2001, pp. L935-L936
Authors:
Kawaguchi, M
Miyamoto, T
Gouardes, E
Schlenker, D
Kondo, T
Koyama, F
Iga, K
Citation: M. Kawaguchi et al., Lasing characteristics of low-threshold GaInNAs lasers grown by metalorganic chemical vapor deposition, JPN J A P 2, 40(7B), 2001, pp. L744-L746
Authors:
Yamatoya, T
Sekiguchi, S
Koyama, F
Iga, K
Citation: T. Yamatoya et al., High-power CW operation of GaInAsP/InP superluminescent light-emitting diode with tapered active region, JPN J A P 2, 40(7A), 2001, pp. L678-L680
Authors:
Miura, T
Koyama, F
Aoki, Y
Matsutani, AJ
Iga, K
Citation: T. Miura et al., Hollow optical waveguide for temperature-insensitive photonic integrated circuits, JPN J A P 2, 40(7A), 2001, pp. L688-L690
Authors:
Nishiyama, N
Arai, M
Shinada, S
Azuchi, M
Matsutani, A
Miyamoto, T
Koyama, F
Iga, K
Citation: N. Nishiyama et al., 1.12 mu m polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs(311)B by metal organic chemical vapor deposition, JPN J A P 2, 40(5A), 2001, pp. L437-L439
Authors:
Makino, S
Miyamoto, T
Kageyama, T
Ikenaga, Y
Arai, M
Koyama, F
Iga, K
Citation: S. Makino et al., Composition dependence of thermal annealing effect on 1.3 mu m GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy, JPN J A P 2, 40(11B), 2001, pp. L1211-L1213
Authors:
Nishiyama, N
Arai, M
Shinada, S
Azuchi, M
Miyamoto, T
Koyama, F
Iga, K
Citation: N. Nishiyama et al., Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation, IEEE S T QU, 7(2), 2001, pp. 242-248
Authors:
Shinada, S
Koyama, F
Nishiyama, N
Arai, M
Iga, K
Citation: S. Shinada et al., Analysis and fabrication of microaperture GaAs-GaAlAs surface-emitting laser for near-field optical data storage, IEEE S T QU, 7(2), 2001, pp. 365-370
Authors:
Amano, T
Koyama, F
Nishiyama, N
Matsutani, A
Iga, K
Citation: T. Amano et al., Temperature insensitive micromachined GaAlAs/GaAs vertical cavity wavelength filter, IEICE TR EL, E84C(5), 2001, pp. 678-684
Authors:
Arai, M
Nishiyama, N
Azuchi, M
Shinada, S
Matsutani, A
Koyama, F
Iga, K
Citation: M. Arai et al., GaInAs/GaAs single mode vertical cavity surface emitting laser (VCSEL) array on GaAs (311)B, IEICE TR EL, E84C(3), 2001, pp. 331-338
Authors:
Amano, T
Koyama, F
Nishiyama, N
Matsutani, A
Iga, K
Citation: T. Amano et al., Temperature insensitive micromachined GaAlAs/GaAs vertical cavity wavelength filter, IEICE TR CO, E84B(5), 2001, pp. 1304-1310
Authors:
Ueno, M
Koyama, F
Yamada, Y
Fujimoto, H
Takayama, T
Kamada, K
Naito, A
Mukogawai, SHT
Hamada, H
Citation: M. Ueno et al., Tumor-specific chemo-radio-gene therapy for colorectal cancer cells using adenovirus vector expressing the cytosine deaminase gene, ANTICANC R, 21(4A), 2001, pp. 2601-2608
Authors:
Terauchi, S
Yamamoto, K
Fujii, H
Koyama, F
Sugimori, S
Enomoto, H
Yamanouchi, M
Nakano, H
Citation: S. Terauchi et al., Mantle cell lymphoma of the rectum at an early stage: A case report, HEP-GASTRO, 48(39), 2001, pp. 675-677
Authors:
Kageyama, T
Miyamoto, T
Makino, S
Ikenaga, Y
Nishiyama, N
Matsutani, A
Koyama, F
Iga, K
Citation: T. Kageyama et al., Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown bychemical beam epitaxy with output power exceeding 1mW, ELECTR LETT, 37(4), 2001, pp. 225-226
Authors:
Sekiguchi, S
Miyamoto, T
Kimura, T
Okazaki, G
Koyama, F
Iga, K
Citation: S. Sekiguchi et al., Improvement of current injection uniformity and device resistance in long-wavelength vertical-cavity surface-emitting laser using a tunnel junction, JPN J A P 1, 39(7A), 2000, pp. 3997-4001
Authors:
Ariga, M
Sekido, Y
Sakai, A
Baba, T
Matsutani, A
Koyama, F
Iga, K
Citation: M. Ariga et al., Low threshold GaInAsP lasers with semiconductor/air distributed Bragg reflector fabricated by inductively coupled plasma etching, JPN J A P 1, 39(6A), 2000, pp. 3406-3409
Authors:
Arai, M
Nishiyama, N
Shinada, S
Koyama, F
Iga, K
Citation: M. Arai et al., AlAs oxidation system with H2O vaporizer for oxide-confined surface emitting lasers, JPN J A P 1, 39(6A), 2000, pp. 3468-3469
Authors:
Koyama, F
Amano, T
Furukawa, N
Nishiyama, N
Arai, M
Iga, K
Citation: F. Koyama et al., Micromachined semiconductor vertical cavity for temperature insensitive surface emitting lasers and optical filters, JPN J A P 1, 39(3B), 2000, pp. 1542-1545
Authors:
Matsutani, A
Ohtsuki, H
Koyama, F
Iga, K
Citation: A. Matsutani et al., Plasma diagnostics in inductively coupled plasma etching using Cl-2/Xe, JPN J A P 1, 39(3A), 2000, pp. 1435-1436