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Results: 1-11 |
Results: 11
Radiation defects in n-4H-SiC irradiated with 8-MeV protons
Authors: Lebedev, AA Veinger, AI Davydov, DV Kozlovskii, VV Savkina, NS Strel'chuk, AM
Citation: Aa. Lebedev et al., Radiation defects in n-4H-SiC irradiated with 8-MeV protons, SEMICONDUCT, 34(9), 2000, pp. 1016-1020
Radiation defects in n-6H-SiC irradiated with 8 MeV protons
Authors: Lebedev, AA Veinger, AI Davydov, DV Kozlovskii, VV Savkina, NS Strel'chuk, AM
Citation: Aa. Lebedev et al., Radiation defects in n-6H-SiC irradiated with 8 MeV protons, SEMICONDUCT, 34(8), 2000, pp. 861-866
Modification of semiconductors with proton beams. A review
Authors: Kozlovskii, VV Kozlov, VA Lomasov, VN
Citation: Vv. Kozlovskii et al., Modification of semiconductors with proton beams. A review, SEMICONDUCT, 34(2), 2000, pp. 123-140
Special features of alpha-particle detection with thin semi-insulating 6H-SiC films
Authors: Strokan, NB Lebedev, AA Ivanov, AM Davydov, DV Kozlovskii, VV
Citation: Nb. Strokan et al., Special features of alpha-particle detection with thin semi-insulating 6H-SiC films, SEMICONDUCT, 34(12), 2000, pp. 1386-1390
Point defects in gamma-irradiated n-GaN
Authors: Emtsev, VV Davydov, VY Kozlovskii, VV Lundin, VV Poloskin, DS Smirnov, AN Shmidt, NM Usikov, AS Aderhold, J Klausing, H Mistele, D Rotter, T Stemmer, J Semchinova, O Graul, J
Citation: Vv. Emtsev et al., Point defects in gamma-irradiated n-GaN, SEMIC SCI T, 15(1), 2000, pp. 73-78
In memory of Vadim Fedorovich Masterov
Authors: Alferov, ZI Vasil'ev, YS Zabrodskii, AG Zakharchenya, BP Ipatova, IP Kesamanly, FP Kozlovskii, VV Kolgatin, VN Perel', VI Emtsev, VV Ammerlaan, J Pizzini, S
Citation: Zi. Alferov et al., In memory of Vadim Fedorovich Masterov, SEMICONDUCT, 33(6), 1999, pp. 704-705
Distribution of hydrogen in silicon and silicon carbide following high-temperature proton irradiation
Authors: Kozlovskii, VV Kozlov, VA
Citation: Vv. Kozlovskii et Va. Kozlov, Distribution of hydrogen in silicon and silicon carbide following high-temperature proton irradiation, SEMICONDUCT, 33(12), 1999, pp. 1265-1266
Detection of paramagnetic recombination centers in proton-irradiated silicon
Authors: Vlasenko, LS Vlasenko, MP Kozlov, VA Kozlovskii, VV
Citation: Ls. Vlasenko et al., Detection of paramagnetic recombination centers in proton-irradiated silicon, SEMICONDUCT, 33(10), 1999, pp. 1059-1061
Determination of the energy dependence of the nuclear reaction cross section using profiles of transmutation nuclides
Authors: Didik, VA Malkovich, RS Skoryatina, EA Kozlovskii, VV
Citation: Va. Didik et al., Determination of the energy dependence of the nuclear reaction cross section using profiles of transmutation nuclides, ATOM ENERGY, 86(2), 1999, pp. 156-157
Behavior of electrically active point defects in irradiated MOCVD n-GaN
Authors: Emtsev, VV Davydov, VY Kozlovskii, VV Poloskin, DS Smirnov, AN Shmidt, NM Usikov, AS
Citation: Vv. Emtsev et al., Behavior of electrically active point defects in irradiated MOCVD n-GaN, PHYSICA B, 274, 1999, pp. 101-104
Distribution of the isotopes produced in the YBa2Cu3O7-x superconductor and PbZr0.54Ti0.46O3 ferroelectric by energetic charged particles
Authors: Didik, VA Malkovich, RS Skoryatina, EA Kozlovskii, VV
Citation: Va. Didik et al., Distribution of the isotopes produced in the YBa2Cu3O7-x superconductor and PbZr0.54Ti0.46O3 ferroelectric by energetic charged particles, PHYS SOL ST, 40(12), 1998, pp. 1985-1988
Risultati: 1-11 |