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Results: 1-9 |
Results: 9
Stresses and strains in anisotropic cubic ultra-thin overlayers
Authors: Kunert, HW Lavitska, E
Citation: Hw. Kunert et E. Lavitska, Stresses and strains in anisotropic cubic ultra-thin overlayers, CRYST RES T, 36(8-10), 2001, pp. 1045-1057
Raman and photoluminescence spectroscopy from N-2(+)-ion implanted and alpha-irradiated and annealed GaN/sapphire
Authors: Kunert, HW Maurice, TP Brink, DJ Prinsloo, LC Malherbe, JB Camassel, J
Citation: Hw. Kunert et al., Raman and photoluminescence spectroscopy from N-2(+)-ion implanted and alpha-irradiated and annealed GaN/sapphire, NUCL INST B, 181, 2001, pp. 286-292
Electronic and structural properties of the n-GaAs: Si as-grown, alpha-particle irradiated and annealed
Authors: Kunert, HW
Citation: Hw. Kunert, Electronic and structural properties of the n-GaAs: Si as-grown, alpha-particle irradiated and annealed, NUCL INST B, 181, 2001, pp. 293-297
Optical properties of as grown and ion implanted (Ar+,N-2(+),alpha) GaAs nipi doping superlattices
Authors: Kunert, HW Malherbe, JB Brink, DJ Odendaal, RQ Prinsloo, LC Camassel, J Allegre, J Zeaiter, K Llinares, C
Citation: Hw. Kunert et al., Optical properties of as grown and ion implanted (Ar+,N-2(+),alpha) GaAs nipi doping superlattices, APPL SURF S, 166(1-4), 2000, pp. 77-81
Raman and photoluminescence spectroscopy from as grown and 147 keV Ar+-ionimplanted AlxGa1-xAs/GaAs quantum wells
Authors: Kunert, HW
Citation: Hw. Kunert, Raman and photoluminescence spectroscopy from as grown and 147 keV Ar+-ionimplanted AlxGa1-xAs/GaAs quantum wells, APPL SURF S, 166(1-4), 2000, pp. 304-308
Particle irradiation of doping superlattices: An optical investigation
Authors: Brink, DJ Kunert, HW Sieberhagen, R
Citation: Dj. Brink et al., Particle irradiation of doping superlattices: An optical investigation, J APPL PHYS, 88(5), 2000, pp. 2326-2330
Tuneable photoluminescence, Raman spectroscopy and electrical properties of GaAs doping superlattices
Authors: Kunert, HW Brink, DJ Matjila, J Modise, TS
Citation: Hw. Kunert et al., Tuneable photoluminescence, Raman spectroscopy and electrical properties of GaAs doping superlattices, SUPERLATT M, 25(1-2), 1999, pp. 389-395
Optical properties of As-grown, alpha-particle irradiated and N-2(+)-ion implaned GaN
Authors: Kunert, HW Juillaguet, S Camassel, J Malherbe, JB Odendaal, RQ Brink, DJ Prinsloo, LC
Citation: Hw. Kunert et al., Optical properties of As-grown, alpha-particle irradiated and N-2(+)-ion implaned GaN, PHYS ST S-B, 216(1), 1999, pp. 619-623
Electronic and structural properties of As-grown and alpha-particle irradiated GaAs doping superlattices
Authors: Kunert, HW Brink, DJ Donnadieu, A Zeaiter, K Llinares, C Allegre, J Leveque, G Camassel, J
Citation: Hw. Kunert et al., Electronic and structural properties of As-grown and alpha-particle irradiated GaAs doping superlattices, PHYS ST S-B, 210(2), 1998, pp. 699-705
Risultati: 1-9 |