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Results: 1-24 |
Results: 24
KRF LASER EPITAXY OF SILICON-GERMANIUM ALLOY LAYERS BY IRRADIATION OFSI(1-X)GEX SI(100) STRUCTURES/
Authors: LARCIPRETE R GRIMALDI MG BORSELLA E COZZI S MARTELLI S PIERETTI S VIANEY I
Citation: R. Larciprete et al., KRF LASER EPITAXY OF SILICON-GERMANIUM ALLOY LAYERS BY IRRADIATION OFSI(1-X)GEX SI(100) STRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1589-1594
ATOMIC-FORCE MICROSCOPY STUDY OF THE MORPHOLOGICAL MODIFICATIONS INDUCED BY LASER PROCESSING OF SI(1-X)GEX SI SAMPLES/
Authors: PADELETTI G LARCIPRETE R
Citation: G. Padeletti et R. Larciprete, ATOMIC-FORCE MICROSCOPY STUDY OF THE MORPHOLOGICAL MODIFICATIONS INDUCED BY LASER PROCESSING OF SI(1-X)GEX SI SAMPLES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1762-1766
LASER DEPOSITION AND CHARACTERIZATION OF OPTICAL-LAYERS
Authors: BULIR J JELINEK M MASETTI E LARCIPRETE R
Citation: J. Bulir et al., LASER DEPOSITION AND CHARACTERIZATION OF OPTICAL-LAYERS, Laser physics, 8(1), 1998, pp. 352-357
THERMAL AND EXCIMER-LASER ASSISTED GROWTH OF SI(1-X)GEX ALLOYS FROM SI2H6 AND GEH4 MONITORED BY ON LINE SINGLE-WAVELENGTH ELLIPSOMETRY AND EX-SITU ATOMIC-FORCE MICROSCOPY
Authors: LARCIPRETE R COZZI S PIERETTI S PADELETTI G MASETTI E MONTECCHI M
Citation: R. Larciprete et al., THERMAL AND EXCIMER-LASER ASSISTED GROWTH OF SI(1-X)GEX ALLOYS FROM SI2H6 AND GEH4 MONITORED BY ON LINE SINGLE-WAVELENGTH ELLIPSOMETRY AND EX-SITU ATOMIC-FORCE MICROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 644-652
BULK-LIKE SI(001) ATOMIC REARRANGEMENT ARTIFICIALLY CREATED AT THE GESB/SI(001) INTERFACE/
Authors: PERFETTI P DEPADOVA P LARCIPRETE R QUARESIMA C OTTAVIANI C
Citation: P. Perfetti et al., BULK-LIKE SI(001) ATOMIC REARRANGEMENT ARTIFICIALLY CREATED AT THE GESB/SI(001) INTERFACE/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 20(7-8), 1998, pp. 1029-1037
HIGH-RESOLUTION PHOTOEMISSION-STUDY OF THE SURFACTANT DESORPTION AFTER SB MEDIATED GE EPITAXY ON SI(001)
Authors: DEPADOVA P LARCIPRETE R QUARESIMA C OTTAVIANI C COMICIOLI C CROTTI C HAKANSSON MC PELOI M RESSEL B PERFETTI P
Citation: P. Depadova et al., HIGH-RESOLUTION PHOTOEMISSION-STUDY OF THE SURFACTANT DESORPTION AFTER SB MEDIATED GE EPITAXY ON SI(001), Applied surface science, 123, 1998, pp. 641-645
ORGANOTIN FILMS DEPOSITED BY LASER-INDUCED CVD AS ACTIVE LAYERS IN CHEMICAL GAS SENSORS
Authors: LARCIPRETE R BORSELLA E DEPADOVA P PERFETTI P FAGLIA G SBERVEGLIERI G
Citation: R. Larciprete et al., ORGANOTIN FILMS DEPOSITED BY LASER-INDUCED CVD AS ACTIVE LAYERS IN CHEMICAL GAS SENSORS, Thin solid films, 323(1-2), 1998, pp. 291-295
COMBINED HIGH-RESOLUTION X-RAY-DIFFRACTION AND EXAFS STUDIES OF SI(1-X)GE-X HETEROSTRUCTURES
Authors: DEPADOVA P FELICI R LARCIPRETE R FERRARI L ORTEGA L FORMOSO V COMIN F BALERNA A
Citation: P. Depadova et al., COMBINED HIGH-RESOLUTION X-RAY-DIFFRACTION AND EXAFS STUDIES OF SI(1-X)GE-X HETEROSTRUCTURES, Thin solid films, 319(1-2), 1998, pp. 20-24
GROWTH OF GE LAYERS ON SI(100) MONITORED BY IN-SITU ELLIPSOMETRY
Authors: LARCIPRETE R COZZI S MASETTI E MONTECCHI M PADELETTI G
Citation: R. Larciprete et al., GROWTH OF GE LAYERS ON SI(100) MONITORED BY IN-SITU ELLIPSOMETRY, Thin solid films, 315(1-2), 1998, pp. 49-56
PRODUCTION AND TREATMENT OF SI1-XGEX FILMS BY EXCIMER-LASER ASSISTED TECHNIQUES
Authors: CASTRO J CHIUSSI S SERRA J LEON B PEREZAMOR M MARTELLI S LARCIPRETE R FRANGIS N
Citation: J. Castro et al., PRODUCTION AND TREATMENT OF SI1-XGEX FILMS BY EXCIMER-LASER ASSISTED TECHNIQUES, Revista de metalurgia, 34(2), 1998, pp. 78-81
IDENTIFICATION OF THE SI 2P SURFACE CORE-LEVEL SHIFTS ON THE SB SI(001)-(2X1) INTERFACE/
Authors: DEPADOVA P LARCIPRETE R QUARESIMA C OTTAVIANI C RESSEL B PERFETTI P
Citation: P. Depadova et al., IDENTIFICATION OF THE SI 2P SURFACE CORE-LEVEL SHIFTS ON THE SB SI(001)-(2X1) INTERFACE/, Physical review letters, 81(11), 1998, pp. 2320-2323
HIGH-RESOLUTION ELECTRON-MICROSCOPY AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDIES OF HETEROEPITAXIAL SIXGE(1-X) ALLOYS PRODUCED THROUGH LASER-INDUCED PROCESSING
Authors: FRANGIS N VANLANDUYT J LARCIPRETE R MARTELLI S BORSELLA E CHIUSSI S CASTRO J LEON B
Citation: N. Frangis et al., HIGH-RESOLUTION ELECTRON-MICROSCOPY AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDIES OF HETEROEPITAXIAL SIXGE(1-X) ALLOYS PRODUCED THROUGH LASER-INDUCED PROCESSING, Applied physics letters, 72(22), 1998, pp. 2877-2879
SURFACE-ANALYSIS STUDY OF THE OXIDATION OF ORGANOTIN FILMS DEPOSITED BY ARF EXCIMER-LASER CHEMICAL-VAPOR-DEPOSITION
Authors: LARCIPRETE R BORSELLA E DEPADOVA P PERFETTI P CROTTI C
Citation: R. Larciprete et al., SURFACE-ANALYSIS STUDY OF THE OXIDATION OF ORGANOTIN FILMS DEPOSITED BY ARF EXCIMER-LASER CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(5), 1997, pp. 2492-2501
X-RAY-DIFFRACTION AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF PARTIALLY STRAINED SIGE LAYERS PRODUCED VIA EXCIMER-LASER PROCESSING
Authors: MARTELLI S VIANEY I LARCIPRETE R BORSELLA E CASTRO J CHIUSSI S LEON B
Citation: S. Martelli et al., X-RAY-DIFFRACTION AND X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF PARTIALLY STRAINED SIGE LAYERS PRODUCED VIA EXCIMER-LASER PROCESSING, Journal of applied physics, 82(1), 1997, pp. 147-154
KRF-EXCIMER LASER-INDUCED NATIVE-OXIDE REMOVAL FROM SI(100) SURFACES STUDIED BY AUGER-ELECTRON SPECTROSCOPY
Authors: LARCIPRETE R BORSELLA E CINTI P
Citation: R. Larciprete et al., KRF-EXCIMER LASER-INDUCED NATIVE-OXIDE REMOVAL FROM SI(100) SURFACES STUDIED BY AUGER-ELECTRON SPECTROSCOPY, Applied physics A: Materials science & processing, 62(2), 1996, pp. 103-114
ARF EXCIMER-LASER EPITAXY OF SIXGE1-X ALLOYS STUDIED BY XRD AND XPS
Authors: LARCIPRETE R WILLMOTT P MARTELLI S CESILE MC BORSELLA E CHIUSSI S GONZALEZ P LEON B
Citation: R. Larciprete et al., ARF EXCIMER-LASER EPITAXY OF SIXGE1-X ALLOYS STUDIED BY XRD AND XPS, Applied surface science, 106, 1996, pp. 179-185
SYNCHROTRON-RADIATION PHOTOELECTRON-SPECTROSCOPY OF THE O(2S) CORE-LEVEL AS A TOOL FOR MONITORING THE REDUCING EFFECTS OF ION-BOMBARDMENT ON SNO2 THIN-FILMS
Authors: DEPADOVA P LARCIPRETE R OTTAVIANI C QUARESIMA C PERFETTI P BORSELLA E ASTALDI C COMICIOLI C CROTTI C MATTEUCCI M ZACCHIGNA M PRINCE K
Citation: P. Depadova et al., SYNCHROTRON-RADIATION PHOTOELECTRON-SPECTROSCOPY OF THE O(2S) CORE-LEVEL AS A TOOL FOR MONITORING THE REDUCING EFFECTS OF ION-BOMBARDMENT ON SNO2 THIN-FILMS, Applied surface science, 104, 1996, pp. 349-353
LASER-INDUCED INTEGRATED PROCESSING FOR HETEROEPITAXIAL SIXGE(1-X) ALLOYS
Authors: CHIUSSI S GONZALEZ P LEON B LARCIPRETE R WILLMOTT P MARTELLI S CESILE C BORSELLA E
Citation: S. Chiussi et al., LASER-INDUCED INTEGRATED PROCESSING FOR HETEROEPITAXIAL SIXGE(1-X) ALLOYS, Applied surface science, 102, 1996, pp. 42-46
UHV-CVD GE SI(100) HETEROEPITAXY MONITORED BY IN-SITU ELLIPSOMETRY/
Authors: LARCIPRETE R COZZI S MASETTI E MONTECCHI M
Citation: R. Larciprete et al., UHV-CVD GE SI(100) HETEROEPITAXY MONITORED BY IN-SITU ELLIPSOMETRY/, Applied surface science, 102, 1996, pp. 52-56
IN-SITU MONITORING OF FILM DEPOSITION WITH AN ELLIPSOMETER BASED ON A4-DETECTOR PHOTOPOLARIMETER
Authors: MASETTI E MONTECCHI M LARCIPRETE R COZZI S
Citation: E. Masetti et al., IN-SITU MONITORING OF FILM DEPOSITION WITH AN ELLIPSOMETER BASED ON A4-DETECTOR PHOTOPOLARIMETER, Applied optics, 35(28), 1996, pp. 5626-5629
CR, SN AND AG SNO2 INTERFACE FORMATION STUDIED BY SYNCHROTRON-RADIATION-INDUCED UPS/
Authors: DEPADOVA P LARCIPRETE R MANGIANTINI M FANFONI M
Citation: P. Depadova et al., CR, SN AND AG SNO2 INTERFACE FORMATION STUDIED BY SYNCHROTRON-RADIATION-INDUCED UPS/, Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 499-504
EXCIMER-LASER CLEANING OF SI(100) SURFACES AT 193 AND 248 NM STUDIED BY LEED, AES AND XPS SPECTROSCOPIES
Authors: LARCIPRETE R BORSELLA E
Citation: R. Larciprete et E. Borsella, EXCIMER-LASER CLEANING OF SI(100) SURFACES AT 193 AND 248 NM STUDIED BY LEED, AES AND XPS SPECTROSCOPIES, Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 607-612
A SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY OF THE OXIDATION OF TIN
Authors: DEPADOVA P FANFONI M LARCIPRETE R MANGIANTINI M PRIORI S PERFETTI P
Citation: P. Depadova et al., A SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY OF THE OXIDATION OF TIN, Surface science, 313(3), 1994, pp. 379-391
ARF EXCIMER-LASER DEPOSITED TIN OXIDE-FILMS STUDIED BY INSITU SURFACEDIAGNOSTICS AND BY SYNCHROTRON RADIATION-INDUCED UV PHOTOEMISSION
Authors: LARCIPRETE R BORSELLA E DEPADOVA P FANFONI M MANGIANTINI M PERFETTI P
Citation: R. Larciprete et al., ARF EXCIMER-LASER DEPOSITED TIN OXIDE-FILMS STUDIED BY INSITU SURFACEDIAGNOSTICS AND BY SYNCHROTRON RADIATION-INDUCED UV PHOTOEMISSION, Applied surface science, 69(1-4), 1993, pp. 59-64
Risultati: 1-24 |